Etching apparatus

A substrate processing apparatus, comprising:

• a chamber body defining a volume;
• a ceiling coupled to the chamber body;
• an electrode coupled to the ceiling;
• a pedestal disposed in the volume and having a surface facing a surface of the electrode;
• and
• an actuator coupled to the pedestal and configured to position a surface of the pedestal facing the surface of the electrode in a non-parallel orientation relative to a surface of the electrode.

A substrate processing apparatus, comprising:

• a chamber body defining a volume;
• an electrode for performing electron beam reactive plasma etching disposed in the volume;
• a pedestal coupled to a support shaft, the pedestal disposed in the volume opposite the electrode;
• a conductive mesh disposed in the pedestal;
• a plurality of shafts coupled to either the electrode or the pedestal;
• a one or more ball screw actuators coupled to the shafts;
• a first gas injector coupled to the chamber body adjacent the electrode;
• and
• a second gas injector coupled to the chamber body adjacent the pedestal.