Process for manufacturing a two-dimensional film of hexagonal crystalline structure
AssigneeSoitec
InventorsBruno Ghyselen, Jean-Marc Bethoux
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Abstract
A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.
Claims30
A process for manufacturing a two-dimensional film of a group-IV material having a hexagonal crystal structure, comprising:
- forming a growth substrate, comprising transferring a single-crystal metal film adapted for growth of the two-dimensional film on a support substrate;
- and
- epitaxially growing the two-dimensional film on the metal film of the growth substrate;
- and
- wherein the metal film has a thickness of 1 μm or less.
A structure comprising successively a support substrate, a single-crystal metal film and a two-dimensional film of a group-IV material having a hexagonal crystal structure on the metal film.
Dependencies are inferred from the claim text.