# US 2019/0378965 A1 · Method for manufacturing semiconductor light-emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0378965 A1 - Document ID: US20190378965A1 - Status: Published application - Kind: A1 - Application number: 16/519,546 - Filed: 2019-07-23 - Published: 2019-12-12 - Earliest claimed: 2014-09-12 - Assignees: Semicon Light Co., Ltd. - Applicants: Semicon Light Co., Ltd. - Inventors: Soo Kun JEON; Seung Ho BAEK; Da Rae LEE; Bong Hwan KIM; Dong So JUNG - Web page: https://patentgrep.com/patent/US20190378965A1 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/01: Manufacture or treatment - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/853: characterised by their shape - H10H 20/856: Reflecting means - H10P 72/0446: {Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates} - H10P 72/0611: {Sorting devices} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs - H10W 72/0198: {batch processes} - H10H 20/0361: {of wavelength conversion means} - H10H 20/0362: {of encapsulations} - H10H 20/0364: {of interconnections} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/8506: {Containers} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam. ## Claims ### Claim at position 1 1-11. (cancelled) ### Claim 12 A method for manufacturing a semiconductor light emitting device, the method comprising: providing onto a base a dam with openings, and semiconductor light emitting chips lying on exposed portions of the base through the openings, respectively, with cutting grooves being formed on the dam around the openings; supplying an encapsulant to each of the openings to cover the semiconductor light emitting chip; and obtaining an individual separated semiconductor light emitting device by cutting along the cutting grooves, with the separate semiconductor light emitting device being comprised of the semiconductor light emitting chip, the encapsulant and a cut dam portion. ### Claim 13 (depends on 12) The method according to claim 12, wherein providing onto a base a dam and semiconductor light emitting chips involves arranging flip chips with two electrodes as the semiconductor light emitting chips in such a manner that the two electrodes face the base without being covered with the encapsulant. ### Claim 14 (depends on 12) The method according to claim 12, wherein providing onto a base a dam and semiconductor light emitting chips includes providing onto a base a dam with a plurality of openings formed therein and cutting grooves formed on top face of the dam between the openings. ### Claim 15 (depends on 12) The method according to claim 12, wherein obtaining an individual separated semiconductor light emitting device comprises at least one of the following: sawing or scribing the dam along the cutting grooves; or breaking the dam along the cutting grooves. ### Claim 16 (depends on 12) The method according to claim 12, wherein obtaining an individual separated semiconductor light emitting device comprises: cutting the dam around the openings, along the cutting grooves; and separating the semiconductor light emitting devices from the base. ### Claim 17 (depends on 12) The method according to claim 12, wherein obtaining an individual separated semiconductor light emitting device involves cutting both the base and the dam around the openings, along the cutting grooves, such that the individual separated semiconductor light emitting obtained is comprised of the semiconductor light emitting chip, the encapsulant, a cut dam portion, and a cut base portion. ### Claim 18 (depends on 12) The method according to claim 12, wherein obtaining an individual separated semiconductor light emitting device comprises: separating from the base an assembly of the semiconductor light emitting chip, the encapsulant and the dam; and cutting, for the assembly, the dam around the openings, along the cutting grooves. ### Claim 19 (depends on 12) The method according to claim 12, further comprising: prior to providing onto a base a dam and semiconductor light emitting chips, forming a phosphor layer on surface of the semiconductor light emitting chips. ### Claim 20 (depends on 12) The method according to claim 12, wherein at least the dam has a metal surface. ### Claim 21 (depends on 13) The method according to claim 13, wherein obtaining an individual separated semiconductor light emitting device comprised of the semiconductor light emitting chip, the encapsulant and the cut dam portion involves arranging a bottom face of the cut dam portion in a direction where the two electrodes are exposed, and bonding exposed sides of the two electrodes as well as the bottom face of the cut dam portion to outside, resulting in one surface connecting the exposed sides of the two electrodes, faces of the encapsulant around the two electrodes, and the bottom face of the cut dam portion together in line. ### Claim 22 (depends on 17) The method according to claim 17, wherein providing onto a base a dam and semiconductor light emitting chips involves arranging flip chips with two electrodes as the semiconductor light emitting chips in such a manner that the two electrodes face the base without being covered with the encapsulant, and wherein the base comprises: a first conductive part bonded to one of the two electrodes of the semiconductor light emitting chip; a second conductive part bonded to the other of the two electrodes; and an insulating part interpositioned between the first conductive part and the second conductive part. ### Claim 23 (depends on 12) The method according to claim 12, providing onto a base a dam and semiconductor light emitting chips comprises: providing a dam onto the base; and placing the semiconductor light emitting chips on exposed portions of the base through the openings, respectively, using a device carrier configured to recognize a shape of the mask and calibrate positions and angles of the semiconductor light emitting chips to be placed.