# US 2019/0378941 A1 · Optical cladding layer design

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- Number: US 2019/0378941 A1
- Document ID: US20190378941A1
- Status: Published application
- Kind: A1
- Application number: 16/548,260
- Filed: 2019-08-22
- Published: 2019-12-12
- Earliest claimed: 2012-08-29
- Assignees: Juniper Networks, Inc.
- Applicants: Juniper Networks, Inc.
- Inventors: Erik Johan Norberg; Anand Ramaswamy; Brian Robert Koch
- Web page: https://patentgrep.com/patent/US20190378941A1

## CPC

- H10F 77/124: comprising only Group III-V materials, e.g. GaAs
- H01S 5/02461: {Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity}
- H01S 5/3211: {characterised by special cladding layers, e.g. details on band-discontinuities}
- H01S 5/3213: {asymmetric clading layers}
- H10F 30/222: the potential barrier being a PN heterojunction
- H10F 77/12: Active materials
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H01S 5/021: {Silicon based substrates}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H01S 5/1032: {Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region}
- Y02E 10/544: Solar cells from Group III-V materials
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

## Claims

### Claim 1

An semiconductor device with a waveguide, comprising:
a cladding layer defining a longitudinal direction transverse to a surface of the cladding layer and a lateral direction parallel to the cladding layer, the cladding layer having a thinner lateral region and a thicker lateral region;
a silicon semiconductor layer positioned on another surface of the cladding layer opposite the surface of the cladding layer; and
a III-V semiconductor layer positioned on the surface the cladding layer, the III-V semiconductor layer having an active region with light confined in the III-V semiconductor layer by the cladding layer.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the III-V semiconductor layer includes a further thicker lateral region and a further thinner lateral region, the further thicker lateral region is positioned longitudinally adjacent to at least a portion of the thicker lateral region of the cladding layer.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein the further thinner region of the III-V semiconductor layer is positioned longitudinally adjacent to the thinner region of the cladding layer.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the semiconductor layer extends laterally beyond the thicker lateral region of the cladding layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the silicon semiconductor layer has an additional thinner lateral region and an additional thicker lateral region, the additional thicker lateral region being thicker than the additional thinner lateral region.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein at least a portion of the additional thinner region is positioned longitudinally adjacent to at least a portion of the thinner lateral region of the cladding layer.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein at least a portion of the additional thicker region is positioned longitudinally adjacent to at least a portion of the thicker lateral region of the cladding layer.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the thicker and thinner lateral regions of the cladding layer, the further thicker and thinner lateral regions of the III-V semiconductor layer, and the additional thicker and thinner lateral regions of the silicon semiconductor are shaped to form the waveguide for at least a first wavelength of light.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the thicker and thinner lateral regions of the cladding layer and the additional thicker and thinner lateral regions of the silicon semiconductor layer are shaped to form a thermal shunt of silicon extending into the cladding layer.

### Claim 10 (depends on 9)

The semiconductor device of claim 9, wherein the thermal shunt has dimensions smaller than the first wavelength of light in the silicon semiconductor layer.

### Claim 11 (depends on 8)

The semiconductor device of claim 8, wherein the thicker and thinner lateral regions of the cladding layer and the additional thicker and thinner lateral regions of the silicon semiconductor layer are shaped to form a plurality of thermal shunts of silicon extending into the cladding layer.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein each thermal shunt has dimensions smaller than the first wavelength of light in the silicon semiconductor layer.

### Claim 13 (depends on 1)

The semiconductor device of claim 1, wherein the cladding layer includes a dielectric material and has a thermal conductivity less than a thermal conductivity of silicon.

### Claim 14 (depends on 1)

The semiconductor device of claim 1, further comprising:
a buried oxide layer positioned on the silicon semiconductor layer, the buried oxide layer including a hole, at least a portion of the hole being longitudinally aligned with at least a portion of the thicker lateral region of the cladding layer.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, further comprising:
a thermally conductive material positioned in the hole, the thermally conductive material having a thermal conductivity greater than a thermal conductivity of the buried oxide layer.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein the thermally conductive material is one of: a poly-silicon, metal, a thermal paste.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, further comprising:
a substrate positioned on the buried oxide layer, the hole extending through the substrate.

### Claim 18 (depends on 17)

The semiconductor device of claim 17, wherein the hole extends to the silicon semiconductor layer.

### Claim 19 (depends on 18)

The semiconductor device of claim 18, wherein the thermally conductive material in the hole extends to at least the silicon semiconductor layer.

### Claim 20 (depends on 14)

The semiconductor device of claim 14, wherein the hole extends through the silicon semiconductor layer to the cladding layer.