# US 2019/0378928 A1 · Field Effect Transistor Contact with Reduced Contact Resistance Using Implantation Process

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- Number: US 2019/0378928 A1
- Document ID: US20190378928A1
- Status: Published application
- Kind: A1
- Application number: 16/504,670
- Filed: 2019-07-08
- Published: 2019-12-12
- Earliest claimed: 2018-05-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Su-Hao Liu; Kuo-Ju Chen; Chun-Hung Wu; Chia-Cheng Chen; Liang-Yin Chen; Huicheng Chang; Ying-Lang Wang
- Web page: https://patentgrep.com/patent/US20190378928A1

## CPC

- H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10P 14/3454: {Amorphous}
- H10P 30/40: into insulating materials
- H10P 32/302: {Doping polycrystalline silicon or amorphous silicon layers}
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process.

## Claims

### Claim 1

A structure comprising:
an active area on a substrate, the active area comprising a source/drain region, the source/drain region having a silicide layer disposed thereon, the source/drain region comprising:
a first region proximate a top surface of the source/drain region and overlapped with at least a portion of the silicide layer, the first region having a first concentration of germanium, the first region comprising gallium, a peak concentration of gallium being proximate the top surface of the source/drain region, a concentration of gallium decreasing in the source/drain region from the peak concentration of gallium in a direction away from the top surface of the source/drain region; and
a second region disposed between the first region and the substrate, the second region having a second concentration of germanium lower than the first concentration of germanium;
a dielectric layer over the active area; and
a conductive feature extending through the dielectric layer to the active area and contacting the source/drain region at the silicide layer.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the first concentration of germanium is in a range from about 20 atomic percent (at. %) to about 100 at. %, and the second concentration of germanium is in a range from about 0 at. % to about 20 at. %.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the peak concentration of gallium is about 1×1022 A/cm3 or greater at a vertical depth in a range from about 2 to about 6 nm.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the silicide layer is titanium silicon germanium.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the first region further comprises a p-type dopant.

### Claim 6 (depends on 5)

The structure of claim 5, wherein the p-type dopant has a peak concentration equal to or greater than about 1×1021 A/cm3 at a vertical depth in a range between about 2 nm to about 4 nm, and a concentration of the p-type dopant decreases in the source/drain region from the peak concentration of the p-type dopant in a direction away from the top surface of the source/drain region.

### Claim 7

A structure comprising:
a first gate structure over a substrate, the substrate comprising a first semiconductor material;
a second semiconductor material on the substrate, the second semiconductor material being adjacent the first gate structure, the second semiconductor material being different than the first semiconductor material, the second semiconductor material comprising silicon germanium, the second semiconductor material further comprising:
a gallium concentration that increases to a first peak concentration within 10 nm of a surface of the first semiconductor material in a direction away from a top surface of the second semiconductor material; and
a p-type dopant concentration that increases within at a depth of 2 nm to 4 nm in the direction away from the top surface of the second semiconductor material; and
a silicide region in the second semiconductor material.

### Claim 8 (depends on 7)

The structure of claim 7, wherein the p-type dopant concentration comprises boron.

### Claim 9 (depends on 7)

The structure of claim 7, wherein a peak concentration of gallium is greater than a peak concentration of the p-type dopant concentration.

### Claim 10 (depends on 7)

The structure of claim 7, wherein the gallium concentration is in a first region, wherein the first region is contained completely within the second semiconductor material having the p-type dopant concentration.

### Claim 11 (depends on 7)

The structure of claim 7, wherein the first peak concentration is about 1×1022 A/cm3.

### Claim 12 (depends on 7)

The structure of claim 7, wherein the p-type dopant concentration within the depth of 2 nm to 4 nm is a second peak concentration, the second peak concentration being a peak concentration of the p-type dopant concentration in the second semiconductor material.

### Claim 13 (depends on 12)

The structure of claim 12, wherein the second peak concentration is about 1×1021 A/cm3.

### Claim 14 (depends on 7)

The structure of claim 7, wherein the gallium concentration is greater than the p-type dopant concentration proximate an upper surface of the second semiconductor material, and wherein the gallium concentration is less than the p-type dopant concentration distal from the upper surface of the second semiconductor material.

### Claim 15

A structure comprising:
a first gate structure over a substrate, the substrate comprising a first semiconductor material;
a source/drain region over the substrate adjacent the first gate structure, the source/drain region comprising a second semiconductor material, wherein the source/drain region comprises gallium dopants and p-type dopants, wherein a concentration of the gallium dopants increases along a direction toward the substrate to a first peak concentration within 10 nm of a surface of the source/drain region, wherein a concentration of the p-type dopants piles up to a second peak concentration at a depth of 2 nm to 4 nm from the surface of the source/drain region;
a first dielectric layer over the first gate structure and the source/drain region;
a contact extending through the first dielectric layer, the contact being electrically coupled to the source/drain region; and
a silicide region interposed between the contact and the source/drain region.

### Claim 16 (depends on 15)

The structure of claim 15, wherein the concentration of the gallium dopants is greater than the concentration of the p-type dopants proximate an upper surface of the source/drain region, and wherein the concentration of the gallium dopants is less than the concentration of the p-type dopants distal from the upper surface of the source/drain region.

### Claim 17 (depends on 15)

The structure of claim 15, wherein the first peak concentration is about 1×1022 A/cm3.

### Claim 18 (depends on 17)

The structure of claim 17, wherein the second peak concentration is about 1×1021 A/cm3.

### Claim 19 (depends on 15)

The structure of claim 15, wherein the second semiconductor material comprises a first silicon germanium region and a second silicon germanium region below the first silicon germanium region, the first silicon germanium region having a higher concentration of germanium than the second silicon germanium region.

### Claim 20 (depends on 19)

The structure of claim 19, wherein the gallium dopants are contained completely within the first silicon germanium region.