# US 2019/0378798 A1 · Seal ring bonding structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0378798 A1 - Document ID: US20190378798A1 - Status: Published application - Kind: A1 - Application number: 16/006,385 - Filed: 2018-06-12 - Published: 2019-12-12 - Earliest claimed: 2018-06-12 - Assignees: Globalfoundries Singapore Pte. Ltd. - Applicants: GLOBALFOUNDRIES Singapore Pte. Ltd. - Inventors: Lieneng LOW; Teck Wee Christopher LIM; Wai Mun CHONG; Wan Tak NG - Web page: https://patentgrep.com/patent/US20190378798A1 ## CPC - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - H10W 76/60: Seals - B81B 7/0074: {3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board} - B81C 1/00238: {Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure} - B81B 2207/012: the micromechanical device and the control or processing electronics being separate parts in the same package - B81C 2203/035: Soldering - B81C 2203/0792: Forming interconnections between the electronic processing unit and the micromechanical structure - H10W 46/301: {for alignment} - H10W 46/501: {for use before dicing} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/387: {Flow barriers} - H10W 72/59: Bond pads specially adapted therefor - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) ## Abstract The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures with channels and methods of manufacture. The structure includes: a first wafer having a channel formed within a passivation layer; a second wafer having a protuberance which is insertable into the channel and which is bonded to the first wafer with eutectic bonding materials; and a plurality of stoppers or tabs extending within the channel and which provides a gap that has a dimension smaller than a gap formed in other portions of the channel. ## Claims ### Claim 1 A structure, comprising: a first wafer having a channel formed within a passivation layer; a second wafer having a protuberance which is insertable into the channel and which is bonded to the first wafer with eutectic bonding materials; and a plurality of stoppers or tabs extending within the channel and which provides a gap that has a dimension narrower than a gap formed in other portions of the channel. ### Claim 2 (depends on 1) The structure of claim 1, wherein the plurality of stoppers or tabs are structured to prevent overflow of the eutectic bonding materials from exiting the channel during a bonding process of the first wafer to the second wafer. ### Claim 3 (depends on 1) The structure of claim 1, wherein the plurality of stoppers or tabs are positioned about locations of the protuberance, the plurality of stoppers or tabs have a larger width than other portions of the protuberance. ### Claim 4 (depends on 3) The structure of claim 3, wherein the plurality of stoppers or tabs are symmetrically positioned about the protuberance. ### Claim 5 (depends on 3) The structure of claim 3, wherein the plurality of stoppers or tabs are asymmetrically positioned about the protuberance. ### Claim 6 (depends on 1) The structure of claim 1, wherein the plurality of stoppers or tabs are inwardly extending portions of the passivation layer within the channel, which have a narrower area than wider portions of the channel. ### Claim 7 (depends on 1) The structure of claim 1, wherein the plurality of stoppers or tabs are positioned about locations of the protuberance and the passivation layer, the plurality of stoppers or tabs of the protuberance have a larger width than narrower portions of the protuberance, and the plurality of stoppers or tabs of the passivation layer provide a smaller width of the channel than other portions of the channel. ### Claim 8 (depends on 7) The structure of claim 7, wherein the plurality of stoppers or tabs of the passivation layer are in alignment with the plurality of stoppers or tabs of the protuberance. ### Claim 9 (depends on 7) The structure of claim 7, wherein the plurality of stoppers or tabs of the passivation layer are offset from the plurality of stoppers or tabs of the protuberance. ### Claim 10 (depends on 1) The structure of claim 1, wherein a shape of the plurality of stoppers or tabs are any combination of a square, rectangle, quadrilateral, triangular and semicircular shape. ### Claim 11 (depends on 1) The structure of claim 1, wherein the plurality of stoppers or tabs are greater than or equal to one stopper or tab. ### Claim 12 (depends on 1) The structure of claim 1, wherein the first wafer is a MEMS wafer and the second wafer is one of a CMOS wafer, interconnect wafer and dummy cap wafer. ### Claim 13 A structure, comprising: a first wafer having a channel; a second wafer having a protuberance which is insertable into the channel; and a plurality of stoppers or tabs which narrow a gap in the channel and provide a mechanism to direct flow of eutectic encapsulation bonding material to a wider channel portion of the channel during a bonding process of the first wafer to the second wafer. ### Claim 14 (depends on 13) The structure of claim 13, wherein the plurality of stoppers or tabs narrow the channel at predetermined locations. ### Claim 15 (depends on 13) The structure of claim 13, wherein the plurality of stoppers or tabs provide an alignment structure for aligning the first wafer to the second wafer during the bonding process. ### Claim 16 (depends on 13) The structure of claim 13, wherein the plurality of stoppers or tabs are positioned at critical regions which prevent the eutectic bonding materials from overflowing from the channel and short with an adjacent interconnect. ### Claim 17 (depends on 13) The structure of claim 13, wherein the protuberance includes the plurality of stoppers or tabs at predetermined locations, which have a larger width than other portions of the protuberance. ### Claim 18 (depends on 13) The structure of claim 13, wherein the channel includes the plurality of stoppers or tabs, which have a smaller width than wider portions of the channel. ### Claim 19 (depends on 13) The structure of claim 13, wherein the protuberance and the channel both include the plurality of stoppers or tabs. ### Claim 20 A method comprising: aligning a first wafer with a protuberance with a channel of a second wafer; and bonding the first wafer to the second wafer using eutectic bonding materials by subjecting the first wafer and the second wafer to a predetermined temperature and pressure such that eutectic bonding materials are prevented from overflowing from the channel by a narrow gap portion of the channel and are directed to flow into a wider gap portion of the channel.