# US 2019/0378786 A1 · Power module comprising a housing which is formed in levels

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- Number: US 2019/0378786 A1
- Document ID: US20190378786A1
- Status: Published application
- Kind: A1
- Application number: 16/470,970
- Filed: 2017-12-11
- Published: 2019-12-12
- Earliest claimed: 2016-12-20
- Assignees: Robert Bosch GmbH
- Applicants: Robert Bosch GmbH
- Inventors: Georg Hejtmann; Martin Rittner; Nicolas Maier; Uwe Glanz
- Web page: https://patentgrep.com/patent/US20190378786A1

## CPC

- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60)
- H10W 40/778: {in encapsulations}
- H10W 70/041: {Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps}
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/098: {Applying pastes or inks, e.g. screen printing (H10W70/095 takes precedence)}
- H10W 70/415: {Leadframe inner leads serving as die pads}
- H10W 70/461: {specially adapted for cooling}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 74/016: {using moulds}
- H10W 74/473: {containing a filler}
- H10W 90/00: Package configurations
- H10W 90/811: {Multiple chips on leadframes}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 72/07234: {Using a reflow oven}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07335: {Applying EM radiation, e.g. induction heating or using a laser}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/381: {Auxiliary members}
- H10W 72/874: {On different surfaces}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/43: comprising oxides, nitrides or carbides, e.g. ceramics or glasses
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The invention relates to a power module. The power module has at least one power semiconductor and at least one further electronic component. The power module has a housing which is formed by a shaped body and is formed by an encapsulation compound. According to the invention, the housing is formed in at least two levels. At least one power semiconductor component is arranged in a first level and the at least one further electronic component is arranged in the second level. At least one electrically conductive layer, which forms an electrically conductive connecting structure, is formed on a surface of an inner boundary of the power module which extends between the levels. The connecting structure is applied directly to the surface. The at least one further electronic component is electrically conductively connected, in particular soldered or sintered, to the wiring structure. The power semiconductor component in the first level is electrically connected to the further component in the second level by means of the connecting structure.

## Claims

### Claim 1

A power module (1, 30), comprising
at least one power semiconductor (4, 34, 35),
at least one further electronic component (20, 48, 49, 17, 50), and
a housing, which is formed by a shaped body and which is formed by an encapsulation compound (12, 13),
wherein the housing is formed in at least first and second levels (2, 3, 31, 32), and the at least one power semiconductor component (4, 34, 35) is arranged in the first level (3, 31), and the at least one further electronic component (20, 48, 49, 17, 50) is arranged in the second level (2), at least one electrically conductive layer forming an electrically conductive connection structure (18, 19, 24, 51, 52, 53, 54) being formed on a surface (26) of an inner interface (25), extending between the first and second levels (2, 3), of the power module, said layer being applied onto the surface (26), the at least one further electronic component (20, 48, 49, 17, 50) being electrically conductively connected to the connection structure (18, 19, 24, 51, 52, 53, 54), the power semiconductor component (4, 34, 35) in the first level (3, 31) being electrically connected to the further component in the second level (2) by the connection structure (18, 19, 24, 51, 52, 53, 54).

### Claim 2 (depends on 1)

The power module (1, 30) as claimed in claim 1,
characterized in that
the power semiconductor (34, 35) is a semiconductor switch half-bridge (34, 35), and the at least one further component (48, 49) is a driver, which is connected by the connection structure (51, 52, 53, 54) to control terminals (37, 39) of the semiconductor switch half-bridge (34, 35).

### Claim 3 (depends on 1)

The power module (1, 30) as claimed in claim 1,
characterized in that
the encapsulation compound (29) is a cement compound, which is formed with the formation of cement crystals (12), so that each of the first and second levels (2, 3, 31, 32) is formed by a continuous crystal structure.

### Claim 4 (depends on 3)

The power module (1, 30) as claimed in claim 3,
characterized in that
the encapsulation compound (29) comprises filler particles (13).

### Claim 5 (depends on 4)

The power module (1, 30) as claimed in claim 4,
characterized in that
the connection structure forms a temperature sensor (58) which is configured to record a temperature of the power module at the interface (25) and to produce a temperature signal representing the temperature, and the power module (1, 30) is configured to switch the power semiconductor (4, 34, 35) off as a function of the temperature signal.

### Claim 6

A method for producing a power module comprising at least one level, wherein,
in a first step, in order to form a first level (3, 31) of the power module (1, 30), at least one power semiconductor (4, 34, 35) is embedded with an encapsulation compound (29), electrical contacts being formed, which are accessible on a surface (26) of the level (3) after curing of the encapsulation compound (29),
in a further step a connection structure (18, 19, 24, 51, 52, 53, 54) being applied, and at least one further component (17, 20, 48, 49, 50) being applied onto the connection structure (18, 19, 24, 51, 52, 53, 54) and electrically connected to the connection structure (18, 19, 24, 51, 52, 53, 54), and
in another step, the at least one component (17, 20, 48, 49, 50) being enclosed with an encapsulation compound (29) in order to form the second level (2).

### Claim 7 (depends on 6)

The method as claimed in claim 6, wherein the further component (17, 20, 48, 49, 50) is sintered or soldered to the connection structure (18, 19, 24, 51, 52, 53, 54).

### Claim 8 (depends on 6)

The method as claimed in claim 6, wherein the connection structure (18, 19, 24, 51, 52, 53, 54) is predefined by laser beams and applied by electroplating.

### Claim 9 (depends on 6)

The method as claimed in claim 6, wherein electrically conductive metal bodies (10, 11, 46, 47, 57, 67, 68) are formed between terminals of the power semiconductor and the connection structure (18, 19, 24, 51, 52, 53, 54), the metal bodies having upper sides which, after formation of the first level, are accessible on a surface (26) forming an interface (25) with the second level, the connection structure (18, 19, 24, 51, 52, 53, 54) being electrically connected to the metal bodies (10, 11, 46, 47, 57, 67, 68).

### Claim 10 (depends on 6)

The method as claimed in claim 6, wherein, after curing of the first level (3), a recess (66) is produced wherein the recess extends as far as the terminal (64, 42) of the semiconductor component (34) and an electrically conductive metal body (57, 67) is produced from the terminal (64, 42) as far as the boundary layer (25).

### Claim 11 (depends on 1)

The power module (1, 30) as claimed in claim 1, wherein the first and second levels are first and second layers (2, 3, 31, 32), wherein the at least one electrically conductive layer is applied directly onto the surface (26), and wherein the at least one further electronic component (20, 48, 49, 17, 50) is soldered or sintered to the connection structure (18, 19, 24, 51, 52, 53, 54).

### Claim 12 (depends on 3)

The power module (1, 30) as claimed in claim 3, characterized in that the encapsulation compound (29) comprises ceramic particles.

### Claim 13 (depends on 6)

The method as claimed in claim 6, wherein electrically conductive metal bodies (10, 11, 46, 47, 57, 67, 68) are formed between terminals of the power semiconductor and the connection structure (18, 19, 24, 51, 52, 53, 54), the metal bodies having upper sides which, after formation of the first level, are flush with or protrude from the surface (26), the connection structure (18, 19, 24, 51, 52, 53, 54) being electrically connected to the metal bodies (10, 11, 46, 47, 57, 67, 68).

### Claim 14 (depends on 6)

The method as claimed in claim 6, wherein, after curing of the first level (3), a recess (66) is produced, wherein the recess extends as far as the terminal (64, 42) of the semiconductor component (34) and a via contact is produced from the terminal (64, 42) as far as the boundary layer (25).