# US 2019/0378751 A1 · Finfet device comprising a single diffusion break with an upper surface that is substantially coplanar with an upper surface of a fin

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- Number: US 2019/0378751 A1
- Document ID: US20190378751A1
- Status: Published application
- Kind: A1
- Application number: 16/548,192
- Filed: 2019-08-22
- Published: 2019-12-12
- Earliest claimed: 2018-06-07
- Assignees: Globalfoundries Inc.
- Applicants: GLOBALFOUNDRIES Inc.
- Inventors: Jiehui Shu; Hong Yu; Jinping Liu; Hui Zang
- Web page: https://patentgrep.com/patent/US20190378751A1

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A finFET device is disclosed including a fin defined in a semiconductor substrate, the fin having an upper surface and a first diffusion break positioned in the fin, wherein the first diffusion break comprises an upper surface that is substantially coplanar with the upper surface of the fin.

## Claims

### Claim 1

A device, comprising:
a fin defined in a semiconductor substrate, said fin having an upper surface; and
a first diffusion break positioned in said fin, said first diffusion break comprising a dielectric material and an upper surface that is substantially coplanar with said upper surface of said fin.

### Claim 2 (depends on 1)

The device of claim 1, wherein said first diffusion break comprises a first bottom surface positioned at a first depth and wherein the device further comprises a second diffusion break positioned in said fin, said second diffusion break comprising a dielectric material and a second bottom surface that is positioned at a second depth that is greater than said first depth.

### Claim 3 (depends on 2)

The device of claim 2, wherein said second diffusion break has an upper surface that is recessed with respect to said upper surface of said fin.

### Claim 4 (depends on 2)

The device of claim 2 wherein said dielectric material in said first diffusion break and said dielectric material in said second diffusion break comprise a same dielectric material.

### Claim 5

A device, comprising:
a fin defined in a semiconductor substrate, said fin having an upper surface;
a first diffusion break positioned in said fin, said first diffusion comprising a dielectric material and an upper surface that is substantially coplanar with said upper surface of said fin; and
a second diffusion break positioned in said fin, said second diffusion break comprising a dielectric material, wherein said second diffusion break has an upper surface that is recessed with respect to said upper surface of said fin.

### Claim 6 (depends on 5)

The device of claim 5, wherein said first diffusion break comprises a first bottom surface positioned at a first depth and said second diffusion break comprises a second bottom surface that is positioned at a second depth that is greater than said first depth.

### Claim 7 (depends on 5)

The device of claim 5 wherein said dielectric material in said first diffusion break and said dielectric material in said second diffusion break comprise a same dielectric material.