# US 2019/0378749 A1 · Micro-vacuum module for semiconductor device transfer and method for transferring semiconductor device using the micro-vacuum module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0378749 A1 - Document ID: US20190378749A1 - Status: Published application - Kind: A1 - Application number: 16/225,178 - Filed: 2018-12-19 - Published: 2019-12-12 - Earliest claimed: 2018-06-12 - Assignees: Korea Advanced Institute of Science and Technology - Applicants: Korea Advanced Institute of Science and Technology - Inventors: Keon Jae Lee; Han Eol Lee; Tae Jin Kim; Jung Ho Shin; Sang Hyun Park - Web page: https://patentgrep.com/patent/US20190378749A1 ## CPC - H10P 72/78: using vacuum or suction, e.g. Bernoulli chucks - H10P 72/0446: {Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure provides a method for transferring a semiconductor device using a micro-vacuum module, wherein the micro-vacuum module includes: a vacuum-forming substrate having a plurality of through-holes, which are connected to an external pump module and a vacuum control unit, formed; and a pattern-forming unit equipped with a single channel or a plurality of independent channels, which is coupled to the vacuum-forming substrate, wherein the plurality of channels are formed to be communicated respectively to a plurality of vacuum holes which have a smaller size than the size of a semiconductor device to be transferred, and the plurality of vacuum holes, having a diameter smaller than 100 μm, are contacted to a micro semiconductor device having a width and a length of 100 μm or smaller and the micro semiconductor device is transferred using vacuum adsorption. ## Claims ### Claim 1 A method for transferring a semiconductor device using a micro-vacuum module, wherein the micro-vacuum module comprising: a vacuum-forming substrate having a plurality of through-holes, which are connected to an external pump module and a vacuum control unit, formed; and a pattern-forming unit equipped with a single channel or a plurality of independent channels, which is coupled to the vacuum-forming substrate, wherein the plurality of channels are formed to be communicated respectively to a plurality of vacuum holes which have a smaller size than the size of a semiconductor device to be transferred, wherein the plurality of vacuum holes, having a diameter smaller than 100 μm, are contacted to a micro semiconductor device having a width and a length of 100 μm or smaller and the micro semiconductor device is transferred using vacuum adsorption. ### Claim 2 (depends on 1) The method for transferring a semiconductor device of claim 1, wherein the transfer is possible channel by channel if the channel of the vacuum module is plural and the transfer is possible at once if it is singular. ### Claim 3 (depends on 1) The method for transferring a semiconductor device of claim 1, wherein the plurality of vacuum holes are formed by a Si Bosch process. ### Claim 4 (depends on 1) The method for transferring a semiconductor device of claim 1, wherein the plurality of vacuum holes are formed by a laser micromachining process. ### Claim 5 (depends on 1) The method for transferring a semiconductor device of claim 1, wherein the plurality of vacuum holes are formed by a patterning process using an epoxy polymer. ### Claim 6 (depends on 1) The method for transferring a semiconductor device of claim 1, wherein the semiconductor device is a thin-film microLED having a thickness of 5 μm or smaller. ### Claim 7 A method for fabricating a micro-vacuum module for semiconductor device transfer, comprising: forming a hole array serving as holes for forming micro-vacuum on a base substrate; attaching the base substrate onto a carrier substrate using a sacrificial layer; forming a pattern layer capable of covering the hole array formed on the base substrate; attaching a process substrate having through-holes connected to an external pump module and a vacuum control unit to the base substrate; and removing the sacrificial layer and the pattern layer. ### Claim 8 (depends on 7) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 7, wherein the hole array is formed by a process selected from a Si Bosch process, a laser micromachining process and a patterning process using an epoxy polymer. ### Claim 9 (depends on 7) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 7, wherein the hole array formed on the base substrate has a diameter of 1 μm to 1 mm and an area smaller than the area of a semiconductor device to be transferred. ### Claim 10 (depends on 9) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 9, wherein the hole array formed on the base substrate has a diameter smaller than 100 μm and the semiconductor device which is a microLED has a width and a length of 100 μm or smaller. ### Claim 11 A method for fabricating a micro-vacuum module for semiconductor device transfer, comprising: forming a material that can be used as a sacrificial layer on a carrier substrate; forming a hole array serving as holes for forming micro-vacuum on the sacrificial layer; forming a channel in a direction not covering the hole array formed on the carrier substrate; attaching the carrier substrate with the channel formed to a process substrate; and separating the carrier substrate by removing the sacrificial layer. ### Claim 12 (depends on 11) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 11, wherein the hole array is formed using an epoxy polymer and has a diameter of 1 μm to 1 mm and an area smaller than the area of a semiconductor device to be transferred. ### Claim 13 (depends on 12) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 12, wherein the hole array has a diameter smaller than 100 μm and the semiconductor device which is a microLED has a width and a length of 100 μm or smaller. ### Claim 14 (depends on 11) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 11, wherein the hole array is formed by a process selected from a Si Bosch process, a laser micromachining process and a patterning process using an epoxy polymer. ### Claim 15 (depends on 11) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 11, wherein the channel is formed by a process selected from a Si etching process, a laser micromachining process and a patterning process using an epoxy polymer. ### Claim 16 A method for fabricating a micro-vacuum module for semiconductor device transfer, comprising: forming a channel on a base substrate; forming a hole array with a predetermined interval corresponding to the channel formed on the base substrate; and attaching a process substrate with through-holes connected to an external pump module and a vacuum control unit formed to the base substrate. ### Claim 17 (depends on 16) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 16, wherein the hole array is formed by a process selected from a Si Bosch process and a laser micromachining process. ### Claim 18 (depends on 16) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 16, wherein the channel is formed by a process selected from a Si etching process, a laser micromachining process and a patterning process using an epoxy polymer. ### Claim 19 (depends on 16) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 16, wherein the hole array is formed using an epoxy polymer and has a diameter of 1 μm to 1 mm and an area smaller than the area of a semiconductor device to be transferred. ### Claim 20 (depends on 19) The method for fabricating a micro-vacuum module for semiconductor device transfer of claim 19, wherein the hole array has a diameter smaller than 100 μm and the semiconductor device which is a microLED has a width and a length of 100 μm or smaller.