# US 2019/0378709 A1 · Deposition of boron and carbon containing materials

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- Number: US 2019/0378709 A1
- Document ID: US20190378709A1
- Status: Published application
- Kind: A1
- Application number: 16/549,434
- Filed: 2019-08-23
- Published: 2019-12-12
- Earliest claimed: 2013-10-16
- Assignees: ASM IP Holding B.V.
- Applicants: Asm IP Holding B.V.
- Inventors: Viljami Pore
- Web page: https://patentgrep.com/patent/US20190378709A1

## CPC

- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C 16/32: Carbides
- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6532: {by exposure to a plasma}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/68: Organic materials, e.g. photoresists
- H10P 50/283: {by chemical means}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

## Claims

### Claim 1

A method of depositing a BxC film on a three-dimensional structure on a substrate in a reaction space, comprising:
contacting the three-dimensional structure on the substrate with a vapor phase boron precursor in a carrier gas at a substrate surface temperature of up to 400° C. such that the boron precursor decomposes on the three-dimensional structure to form the BxC film, wherein x is 0.1 to 25, and wherein the BxC film has an etch rate in a solution comprising hydrofluoric acid of less than 0.2 nm/min.

### Claim 2 (depends on 1)

The method of claim 1, wherein the three-dimensional structure has an aspect ratio of greater than 8:1.

### Claim 3 (depends on 1)

The method of claim 1, wherein the BxC film has a step coverage of greater than 95% on the three-dimensional structure.

### Claim 4 (depends on 1)

The method of claim 1, wherein the BxC film has a reduced etch rate relative to thermal silicon oxide.

### Claim 5 (depends on 1)

The method of claim 1, wherein the BxC film has a wet etch rate ratio relative to the etch rate of thermal silicon oxide of less than 0.3.

### Claim 6 (depends on 1)

The method of claim 1, wherein the etch rate is less than 0.02 nm/min.

### Claim 7 (depends on 1)

The method of claim 1, wherein the carrier gas comprises nitrogen.

### Claim 8 (depends on 1)

The method of claim 1, wherein the carrier gas comprises at least one of helium and neon.

### Claim 9 (depends on 1)

The method of claim 1, wherein a film density of the BxC-film is less than 2.5 g/cm3.

### Claim 10 (depends on 1)

The method of claim 1, wherein the substrate comprises silicon.

### Claim 11 (depends on 1)

The method of claim 1, wherein the substrate comprises silicon nitride.

### Claim 12 (depends on 1)

The method of claim 1, wherein the BxC film serves as an etch stop layer in a patterning process.

### Claim 13 (depends on 12)

The method of claim 12, wherein the etch stop layer has a film density of 2.0 g/cm3 to 2.5 g/cm3.

### Claim 14 (depends on 1)

The method of claim 1, further comprising exposing the BxC film to a post-deposition plasma treatment process subsequent to depositing the BxC film.

### Claim 15 (depends on 14)

The method of claim 14, wherein the post-deposition plasma treatment process comprises generating a plasma from at least one of a noble gas, nitrogen gas, oxygen gas, and ozone.

### Claim 16 (depends on 1)

The method of claim 1, wherein the substrate surface temperature is between 375° C. and 400° C.

### Claim 17 (depends on 1)

The method of claim 1, wherein the substrate surface temperature is between 200° C. and 400° C.

### Claim 18 (depends on 1)

The method of claim 1, wherein the reaction space is part of a batch reactor.

### Claim 19

A method of forming an etch stop layer on a three-dimensional feature on a substrate, comprising:
contacting the three-dimensional feature with a vapor phase boron precursor at a substrate surface temperature of up to 400° C. such that the boron precursor decomposes on the substrate, wherein the etch stop layer layer comprises BxC, where x is from 0.1 to 25, and wherein a film density of the BxC-film is from 2.0 g/cm3 to 2.5 g/cm3.

### Claim 20 (depends on 19)

The method of claim 19, further comprising exposing the substrate to a post-deposition plasma treatment process subsequent to forming the etch stop layer.