# US 2019/0378674 A1 · Light emitting diodes, fast photo-electron source and photodetectors with scaled nanostructures and nanoscale metallic photonic cavity and antenna, and method of making the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0378674 A1 - Document ID: US20190378674A1 - Status: Published application - Kind: A1 - Application number: 16/231,431 - Filed: 2018-12-22 - Published: 2019-12-12 - Earliest claimed: 2011-11-04 - Assignees: The Trustees of Princeton University - Applicants: The Trustees of Princeton University - Inventors: Stephen Y. CHOU; Wei DING - Web page: https://patentgrep.com/patent/US20190378674A1 ## CPC - H01J 1/3042: {microengineered, e.g. Spindt-type} - H01J 9/025: {of field emission cathodes} - H10H 20/831: characterised by their shape - H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes - H10H 20/032: {of electrodes} - H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures} - H10K 30/35: comprising inorganic nanostructures, e.g. CdSe nanoparticles - H10K 39/30: Devices controlled by radiation - H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene} - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A new ultra-thin high-efficiency photo-electric devices utilizing a plasmonic cavity with subwavelength hole-array (PlaCSH) and various practical devices utilizing such PlaCSH including new light emitting diode (LED), a new photoelectron source, and a new photodetector/solar cell having a photonic resonant cavity with a top metallic layer that is light transmissive, a bottom metallic layer and a middle layer of semiconductor positioned between the top metallic layer and the bottom metallic layer. ## Claims ### Claim 1 A light emitting diode (LED) assembly comprising: a photonic resonant cavity antenna including a top metallic layer that is light transmissive; a bottom metallic layer; and a light emitting material layer of semiconductor positioned between the top metallic layer and the bottom metallic layer for producing light. ### Claim 2 (depends on 1) The light emitting diode assembly of claim 1 wherein the top metallic layer includes a metal mesh with one or more apertures. ### Claim 3 (depends on 2) The light emitting diode assembly of claim 2 wherein the one or more apertures are an array of holes in the top metallic layer having a shape selected from the group consisting of round, polygon, triangle, and a superposition of one or more thereof. ### Claim 4 (depends on 2) The light emitting diode assembly of claim 2 wherein the apertures have an aperture size of less than a wavelength of light. ### Claim 5 (canceled) ### Claim 6 (depends on 5) The light emitting diode assembly of claim 5 wherein the shape of the disks is selected from the group consisting of round, polygon, triangle, and a superposition of one or more thereof. ### Claim 7 (depends on 1) The light emitting diode assembly of claim 1 wherein the top metallic layer is composed of a material selected from the group consisting of a single metal, a mixture of a plurality of metals, and a plurality of layers of two or more metals. ### Claim 8 (depends on 1) The light emitting diode assembly of claim 1 wherein the top metallic layer is composed of one or more materials, mixtures of material, alloys, and/or layers of materials selected from the group consisting of gold, copper, silver, and aluminum. ### Claim 9 (depends on 1) The light emitting diode assembly of claim 1 wherein the top metallic layer includes an electrical connector for electrically coupling to an external energy source for receiving electric current therefrom, the top metallic layer receiving electric current forming an electrode of the LED assembly. ### Claim 10 (canceled) ### Claim 11 (canceled) ### Claim 12 (depends on 1) The light emitting diode assembly of claim 1 wherein the bottom metallic layer is composed of material selected from the group consisting of a single metal, a mixture of a plurality of metals, and a plurality of layers of two or more metals. ### Claim 13 (depends on 1) The light emitting diode assembly of claim 1 wherein the bottom metallic layer is composed of one or more materials, mixtures of material, alloys and/or layers of materials selected from the group consisting of gold, copper, silver, and aluminum ### Claim 14 (depends on 1) The light emitting diode assembly of claim 1 wherein the bottom metallic layer includes an electrical connector for electrically coupling to an external energy source for receiving electric current therefrom, the top metallic layer receiving electric current forming an electrode of the LED assembly. ### Claim 15 (depends on 1) The light emitting diode assembly of claim 1 wherein the light emitting material layer includes a functional layer, a top interface layer positioned between the top metallic layer and the functional layer, and a bottom interface layer positioned between the functional layer and the bottom metallic layer. ### Claim 16 (depends on 15) The light emitting diode assembly of claim 15 wherein the functional layer is composed of a semiconductor that emits photons under an electric current. ### Claim 17 (depends on 15) The light emitting diode assembly of claim 15 wherein the functional layer is composed of one or more of a single material, a mixture of a plurality of materials, multiple layers of a plurality of materials, and a pn junction. ### Claim 18 (depends on 15) The light emitting diode assembly of claim 15 wherein the functional layer is a semiconductor that emits photons selected from the group consisting of crystal, amorphous, polycrystalline, inorganic, organic, a polymer, Gallium Arsenide (GaAs), Gallium Nitride (GaN), Silicon (Si), and Germanium (Ge). ### Claim 19 (depends on 15) The light emitting diode assembly of claim 15 wherein functional layer is a bulk heterojunction material that includes a mixture of a hole material and an electron material. ### Claim 20 (depends on 15) The light emitting diode assembly of claim 15 wherein the functional layer has a thickness optimized for radiating inside of the cavity antenna to outside thereof. ### Claim 21 (canceled) ### Claim 22 (canceled) ### Claim 23 (depends on 15) The light emitting diode assembly of claim 15 wherein the top interface layer, the bottom interface layer, or both, has one or more characteristic selected from the group consisting of: good adhesion between the top metallic layer and the functional layer; a blocking for one type of charge carrier while permitting a flow of a different type of charge carrier between the top metallic layer and the functional layer; and a spacer improving a performance of the cavity antenna. ### Claim 24 (canceled) ### Claim 25 (canceled) ### Claim 26 (canceled) ### Claim 27 (canceled) ### Claim 28 A method of manufacturing a light emitting diode (LED) assembly having a photonic resonant cavity antenna including a top metallic layer that is light transmissive, a bottom metallic layer, and a light emitting material layer of semiconductor positioned between the top metallic layer and the bottom metallic layer, the semiconductor producing light, the method comprising: growing the light emitting material layer using at least one of low temperature molecule beam epitaxy and thin film deposition. ### Claim 29 (canceled) ### Claim 30 (canceled) ### Claim 31 (canceled) ### Claim 32 A photoelectron source assembly comprising: a photonic resonant cavity including a top metallic layer that is light transmissive; a bottom metallic layer, and a photoelectron emission layer of semiconductor positioned between the top metallic layer and the bottom metallic layer for producing photoelectrons. ### Claim at position 33 33-115. (canceled)