# US 2019/0378564 A1 · Memory device and operating method thereof

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- Number: US 2019/0378564 A1
- Document ID: US20190378564A1
- Status: Published application
- Kind: A1
- Application number: 16/005,662
- Filed: 2018-06-11
- Published: 2019-12-12
- Earliest claimed: 2018-06-11
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Chuan-Jen CHANG; Wen-Ming LEE
- Web page: https://patentgrep.com/patent/US20190378564A1

## CPC

- G11C 11/40626: {Temperature related aspects of refresh operations}
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

An operating method of a memory device includes the following operations: detecting a first temperature of the memory device; determining a first refresh rate according to the first temperature; and refreshing the memory array by the first refresh rate. The first refresh rate is lower than a refresh rate upper threshold.

## Claims

### Claim 1

An operating method of a memory device, comprising:
detecting a first temperature of the memory device;
determining a first refresh rate according to the first temperature;
refreshing the memory device by the first refresh rate, wherein the first refresh rate is lower than a refresh rate upper threshold determined by a Joint Electron Device Engineering Council (JEDEC) spec; and
determining a second refresh rate according to a second temperature, wherein the second temperature is higher than the first temperature, and the second refresh rate is higher than the first refresh rate, and the second refresh rate is lower than the refresh rate upper threshold.

### Claim 2 (depends on 1)

The operating method of claim 1, further comprising:
transmitting the first temperature to a controller by a digital command.

### Claim 3

(canceled)

### Claim 4 (depends on 1)

The operating method of claim 1, further comprising:
transmitting a refresh command with the first refresh rate to the memory device.

### Claim 5 (depends on 4)

The operating method of claim 4, further comprising:
receiving an oscillator signal;
generating the refresh command according to a pulse number of the oscillator signal and the first refresh rate.

### Claim 6

A memory device, comprising:
a temperature sensor, configured to detect a first temperature of the memory device;
a memory array; and
a controller, configured to determine a first refresh rate according to the first temperature and to refresh the memory array by the first refresh rate, wherein the first refresh rate is lower than a refresh rate upper threshold determined by a Joint Electron Device Engineering Council (JEDEC) spec,
wherein the controller is further configured to determine a second refresh rate according to a second temperature, wherein the second temperature is higher than the first temperature, the second refresh rate is higher than the first refresh rate, and the second refresh rate is lower than the refresh rate upper threshold.

### Claim 7 (depends on 6)

The memory device of claim 6, wherein the temperature sensor is further configured to transmit the first temperature to the controller by a digital command.

### Claim 8

(canceled)

### Claim 9 (depends on 6)

The memory device of claim 6, wherein the controller is further configured to transmit a refresh command with the first refresh rate to the memory array.

### Claim 10 (depends on 9)

The memory device of claim 9, wherein the controller further comprises:
a counter, configured to receive an oscillator signal;
wherein the controller is further configured to generate the refresh command according to a pulse number of the oscillator signal and the first refresh rate.