# US 2019/0378552 A1 · Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)

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- Number: US 2019/0378552 A1
- Document ID: US20190378552A1
- Status: Published application
- Kind: A1
- Application number: 16/550,103
- Filed: 2019-08-23
- Published: 2019-12-12
- Earliest claimed: 2018-05-21
- Assignees: Avalanche Technology, Inc.
- Applicants: Avalanche Technology, Inc.
- Inventors: Ebrahim Abedifard; Parviz Keshtbod; Ravishankar Tadepalli
- Web page: https://patentgrep.com/patent/US20190378552A1

## CPC

- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1693: {Timing circuits or methods}
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1653: {Address circuits or decoders}
- G11C 11/1659: {Cell access}
- G11C 11/1675: {Writing or programming circuits or methods}
- H10B 61/10: {comprising components having two electrodes, e.g. diodes or MIM elements}
- H10B 61/22: {of the field-effect transistor [FET] type}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

The present invention is directed to a magnetic memory device comprising a memory array structure that includes a first memory array comprising a first plurality of memory cells arranged in rows and columns and a second memory array comprising a second plurality of memory cells arranged in rows and columns. The memory array structure further includes a first multiplexer coupled to a first plurality of first conductive lines with each line connected to a respective column of the first plurality of memory cells; a second multiplexer coupled to a second plurality of first conductive lines with each line connected to a respective column of the second plurality of memory cells; a sense amplifier, whose input is connected to the output of the first multiplexer and the output of the second multiplexer; and a register including a plurality of latches coupled to the sense amplifier via a demultiplexer.

## Claims

### Claim 1

A magnetic memory device comprising a memory array structure that includes:
a first memory array comprising:
a first plurality of magnetic memory cells arranged in rows and columns;
a first plurality of first conductive lines, each of which is coupled to a respective column of said first plurality of magnetic memory cells along a column direction; and
a first plurality of second conductive lines, each of which is coupled to a respective row of said first plurality of magnetic memory cells along a row direction;
a first multiplexer, whose input is coupled to said first plurality of first conductive lines;
a second memory array comprising:
a second plurality of magnetic memory cells arranged in rows and columns;
a second plurality of first conductive lines, each of which is coupled to a respective column of said second plurality of magnetic memory cells along the column direction; and
a second plurality of second conductive lines, each of which is coupled to a respective row of said second plurality of magnetic memory cells along the row direction;
a second multiplexer, whose input is coupled to said second plurality of first conductive lines;
a sense amplifier, whose input is connected to an output of said first multiplexer and an output of said second multiplexer; and
a register connected to an output of said sense amplifier via a demultiplexer, said register including a plurality of latches that can be independently accessed,
wherein a number of said plurality of latches corresponds to a number of said first plurality of first conductive lines or said second plurality of first conductive lines.

### Claim 2 (depends on 1)

The magnetic memory device of claim 1, wherein each magnetic memory cell of said first and second plurality of magnetic memory cells includes a magnetic tunnel junction (MTJ) that functions as a memory element.

### Claim 3 (depends on 1)

The magnetic memory device of claim 1, wherein each magnetic memory cell of said first and second plurality of magnetic memory cells includes a magnetic memory element and a two-terminal selector coupled in series between a respective one of said first and second plurality of first conductive lines and a respective one of said first and second plurality of second conductive lines.

### Claim 4 (depends on 3)

The magnetic memory device of claim 3, wherein said two-terminal selector is a bidirectional threshold switch.

### Claim 5 (depends on 1)

The magnetic memory device of claim 1 further comprising:
a first plurality of third conductive lines, each of which is coupled to a respective column of said first plurality of magnetic memory cells along the column direction; and
a second plurality of third conductive lines, each of which is coupled to a respective column of said second plurality of magnetic memory cells along the column direction.

### Claim 6 (depends on 5)

The magnetic memory device of claim 5, wherein each magnetic memory cell of said first and second plurality of magnetic memory cells includes a magnetic memory element and an access transistor coupled in series between a respective one of said first and second plurality of first conductive lines and a respective one of said first and second plurality of third conductive lines.

### Claim 7 (depends on 6)

The magnetic memory device of claim 6, wherein each third conductive line of said first and second plurality of third conductive lines is coupled to gates of access transistors of a respective row of said first or second plurality of magnetic memory cells.

### Claim 8 (depends on 1)

The magnetic memory device of claim 1, wherein said register is operable to receive column addresses of selected data bits for output to an input/output bus.

### Claim 9 (depends on 1)

The magnetic memory device of claim 1, wherein each of said first and second memory arrays further comprises one or more rows of references cells that provide reference signals during a sensing operation.

### Claim 10 (depends on 1)

The magnetic memory device of claim 1, wherein one of said output of said first multiplexer and said output of said second multiplexer provides a sensing signal to said sense amplifier and the other one of said output of said first multiplexer and said output of said second multiplexer provides a reference signal to said sense amplifier.

### Claim 11 (depends on 1)

The magnetic memory device of claim 1, wherein said first and second plurality of second conductive lines function as word lines.

### Claim 12 (depends on 1)

The magnetic memory device of claim 1, wherein said first and second plurality of first conductive lines function as bit lines.

### Claim 13 (depends on 1)

The magnetic memory device of claim 1 further comprising one or more repeats of said memory array structure, said memory array structure and said one or more repeats thereof being skewered together along said row direction by said first and second plurality of second conductive lines.

### Claim 14 (depends on 13)

The magnetic memory device of claim 13, wherein said memory array structure and said one or more repeats thereof collectively form a pair of memory banks.