# US 2019/0377263 A1 · A lithography composition, a method for forming resist patterns and a method for making semiconductor devices

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- Number: US 2019/0377263 A1
- Document ID: US20190377263A1
- Status: Published application
- Kind: A1
- Application number: 16/462,972
- Filed: 2017-11-21
- Published: 2019-12-12
- Earliest claimed: 2016-11-25
- Assignees: Ridgefield Acquisition
- Applicants: Ridgefield Acquisition
- Inventors: Kazuma YAMAMOTO; Maki ISHII; Tomoyasu YASHIMA; Tatsuro NAGAHARA
- Web page: https://patentgrep.com/patent/US20190377263A1

## CPC

- G03F 7/40: Treatment after imagewise removal, e.g. baking
- H10P 76/2041: {Photolithographic processes}
- G03F 7/162: {Coating on a rotating support, e.g. using a whirler or a spinner}
- G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking}
- G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light}
- G03F 7/322: {Aqueous alkaline compositions}
- G03F 7/38: Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.

## Claims

### Claim at position 1

-14. (canceled)

### Claim 15

A lithography composition comprising a lithography material, water and a surfactant represented by below formula (I),
wherein a is 1, 2, 3, 4 or 5,
b and c are integer, b+c=2a+1, b is on or more than 1,
d is 0, 1 or 2,
e is 0 or 1,
each X is independently represented by below formula (II),
—O—CFR1— formula (II),
R1 is —F, —CF3, —CF2H, —CFH2 or —CH3,
Y is —COOH, —SO3H or an amide group represented by below formula (III),
n is 0, 1 or 2,
L1 is represented by below formula (IV),
f is 0 or 1, and
g is 0, 1, 2 or 3.

### Claim 16 (depends on 15)

The lithography composition according to claim 15, wherein the lithography material is a diol derivative represented by below formula (V),
wherein R2, R3, R4 and R5 are independently hydrogen, fluorine or C1-5 alkyl,
L2 and L3 are independently unsubstituted or substituted C1-5 alkane linker, unsubstituted or substituted C2-4 alkene linker, or unsubstituted or substituted C2-4 alkyne linker,
when C1-5 alkane linker, C2-4 alkene linker or C2-4 alkyne linker are substituted, each substituent is independently fluorine, C1-5 alkyl, or hydroxyl, and
h is 0, 1 or 2.

### Claim 17 (depends on 15)

The lithography composition according to claim 15, wherein the content ratio of the surfactant represented by formula (I) is on or more than 0.005 and on or less than 0.5 mass % in the lithography composition.

### Claim 18 (depends on 15)

The lithography composition according to claim 15, wherein the content ratio of the lithography material is on or more than 0.01 and on or less than 0.5 mass % in the lithography composition.

### Claim 19 (depends on 16)

The lithography composition according to claim 16, wherein the lithography composition further comprises at least one additional component selected from acids, bases, surfactants other than the surfactant represented by formula (I) and an organic solvent other than the diol derivative represented by formula (V).

### Claim 20 (depends on 15)

The lithography composition according to claim 15, wherein the lithography composition further comprises at least one additional component selected from fungicides, antimicrobial agents, preservatives and antifungal agents.

### Claim 21 (depends on 15)

The lithography composition according to claim 15, wherein the surfactant represented by formula (I) is
or a mixture thereof.

### Claim 22 (depends on 15)

A rinse composition comprising the lithography composition according to claim 15.

### Claim 23 (depends on 15)

A lithography method for forming resist patterns comprising applying the lithography composition according to claim 15 to a substrate.

### Claim 24 (depends on 23)

The lithography method for forming resist patterns according to claim 23, wherein the method comprises
(1) applying the photosensitive resin composition on a substrate, with or without one or more intervening layers, to make a photosensitive resin composition layer,
(2) exposing the photosensitive resin composition layer to radiation,
(3) developing the exposed photosensitive resin composition layer, and
(4) rinsing the developed layer with the lithography composition.

### Claim 25 (depends on 23)

The lithography method for forming resist patterns according to claim 23, wherein the photosensitive resin composition is a chemically amplified photosensitive resin composition and the exposure is an exposure with extreme ultra violet radiation.

### Claim 26 (depends on 23)

The lithography method for forming resist patterns according to claim 23, wherein the finest pitch size of the resist pattern on one whole circuit unit is on or more than 10 nm to on or less than 20 nm.

### Claim 27 (depends on 23)

A semiconductor device manufacturing method comprising the lithography method for forming resist patterns according to claim 23.

### Claim 28 (depends on 27)

The semiconductor device manufacturing method according to claim 27, further comprising;
making gaps in the substrate by using the formed resist patterns as a mask.