Electro-optically active device
AssigneeRockley Photonics Limited
InventorsGuomin YU, Yi ZHANG, Aaron ZILKIE
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Abstract
A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.
Claims20
A silicon based electro-optically active device comprising:
- a silicon-on-insulator (SOI) waveguide;
- an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide;
- and
- a channel between the electro-optically active stack and the SOI waveguide;
- wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to thereby form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.
A method of producing a silicon based electro-optically active device, having the steps of:
- providing a silicon-on-insulator (SOI) waveguide;
- etching a cavity in a part of the SOI waveguide through the BOX layer;
- epitaxially growing an electro-optically active stack within the cavity, and etching the electro-optically active stack to form an electro-optically active waveguide, wherein the epitaxially grown electro-optically active stack has a facet in a region adjacent to a sidewall of the cavity;
- etching the region to thereby remove the facet and produce a channel between the sidewall and the stack;
- and
- filling the channel with a filling material which has a refractive index which is greater than that of a material forming the sidewall so that the filling material forms a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.
Dependencies are inferred from the claim text.