# US 2019/0377014 A1 · Compensated power detector

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- Number: US 2019/0377014 A1
- Document ID: US20190377014A1
- Status: Published application
- Kind: A1
- Application number: 16/435,866
- Filed: 2019-06-10
- Published: 2019-12-12
- Earliest claimed: 2018-06-10
- Assignees: Skyworks Solutions, Inc.
- Applicants: Skyworks Solutions, Inc.
- Inventors: Adrian John BERGSMA
- Web page: https://patentgrep.com/patent/US20190377014A1

## CPC

- G01R 21/14: Compensating for temperature change
- G01R 21/00: Arrangements for measuring electric power or power factor (G01R7/12 takes precedence)
- H03F 3/195: in integrated circuits
- H03F 3/4508: {using bipolar transistors as the active amplifying circuit (H03F3/45278 takes precedence)}
- H03F 3/45085: {Long tailed pairs (H03F3/45112, H03F3/45139 take precedence)}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H03F 2200/105: A non-specified detector of the power of a signal being used in an amplifying circuit
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H03F 2203/45371: the AAC comprising parallel coupled multiple transistors at their source and gate and drain or at their base and emitter and collector, e.g. in a cascode dif amp, only those forming the composite common source transistor or the composite common emitter transistor respectively
- H10W 44/226: {for HF amplifiers}
- H10W 44/248: {for antennas}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H03F: AMPLIFIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In some embodiments, a compensated power detector can include a power detector that includes a first detection cell having a bias input and an output, and a second detection cell having a signal input, a bias input and an output. The power detector can further include an error amplifier having a first input coupled to the output of the first detection cell, and a second input for receiving a reference voltage. The error amplifier can be configured to provide an output voltage to each of the bias inputs of the first and second detection cells, such that an output of the second detection cell is representative of power of a radio-frequency signal received at the signal input with an adjustment for one or more non-signal effects as measured by the first detection cell and the error amplifier.

## Claims

### Claim 1

A power detector comprising:
a first detection cell having a bias input and an output;
a second detection cell having a signal input, a bias input and an output; and
an error amplifier having a first input coupled to the output of the first detection cell, and a second input for receiving a reference voltage, the error amplifier configured to provide an output voltage to each of the bias inputs of the first and second detection cells, such that an output of the second detection cell is representative of power of a radio-frequency signal received at the signal input with an adjustment for one or more non-signal effects as measured by the first detection cell and the error amplifier.

### Claim 2 (depends on 1)

The power detector of claim 1 wherein the first detection cell further includes a signal input that is not provided with a radio-frequency signal.

### Claim 3 (depends on 2)

The power detector of claim 2 wherein the first detection cell and the second detection cell are substantially identical.

### Claim 4 (depends on 2)

The power detector of claim 2 wherein each of the first detection cell and the second detection cell includes a power detection circuit based on bipolar junction transistors.

### Claim 5 (depends on 4)

The power detector of claim 4 wherein each of the first detection cell and the second detection cell includes an emitter follower power detection circuit.

### Claim 6 (depends on 5)

The power detector of claim 5 wherein the emitter follower power detection circuit is configured such that the bias input and the signal input are coupled to a base of the respective bipolar junction transistor.

### Claim 7 (depends on 6)

The power detector of claim 6 wherein the emitter follower power detection circuit is further configured such that the output is coupled to an emitter of the respective bipolar junction transistor.

### Claim 8 (depends on 6)

The power detector of claim 6 wherein the emitter follower power detection circuit is further configured such that a collector of the respective bipolar junction transistor is coupled to a supply voltage source.

### Claim 9 (depends on 2)

The power detector of claim 2 wherein the error amplifier includes a first transistor having a base coupled to the first input, a collector coupled to a supply circuit, and an emitter, the error amplifier further including a second transistor having a base coupled to the second input, a collector coupled to the supply circuit, and an emitter coupled to the emitter of the first transistor.

### Claim 10 (depends on 9)

The power detector of claim 9 wherein the collector of the second transistor is configured to provide the output voltage of the error amplifier.

### Claim 11 (depends on 10)

The power detector of claim 10 wherein the error amplifier further includes an output capacitance that couples the collector of the second transistor to ground.

### Claim 12 (depends on 9)

The power detector of claim 9 wherein the supply circuit includes a first transistor and a second transistor each having a source, a gate and a drain, the source of each of the first and second transistors coupled to a regulated voltage node, the gates of the first and second transistors coupled to each other and to the drain of the first transistor.

### Claim 13 (depends on 12)

The power detector of claim 12 wherein the drain of the first transistor of the supply circuit is coupled to the collector of the first transistor of the error amplifier, and the drain of the second transistor of the supply circuit is coupled to the collector of the second transistor of the error amplifier.

### Claim 14 (depends on 2)

The power detector of claim 2 wherein the reference voltage includes a regulated voltage based on a bandgap voltage.

### Claim 15 (depends on 2)

The power detector of claim 2 wherein the one or more non-signal effects includes either or both of a temperature variation and a process variation.

### Claim 16

A semiconductor die comprising:
a semiconductor substrate; and
a power detector implemented on the semiconductor substrate, the power detector including a first detection cell having a bias input and an output, and a second detection cell having a signal input, a bias input and an output, the power detector further including an error amplifier having a first input coupled to the output of the first detection cell, and a second input for receiving a reference voltage, the error amplifier configured to provide an output voltage to each of the bias inputs of the first and second detection cells, such that an output of the second detection cell is representative of power of a radio-frequency signal received at the signal input with an adjustment for one or more non-signal effects as measured by the first detection cell and the error amplifier.

### Claim 17

A packaged module comprising:
a packaging substrate configured to receive a plurality of components; and
a power detector implemented on the packaging substrate, the power detector including a first detection cell having a bias input and an output, and a second detection cell having a signal input, a bias input and an output, the power detector further including an error amplifier having a first input coupled to the output of the first detection cell, and a second input for receiving a reference voltage, the error amplifier configured to provide an output voltage to each of the bias inputs of the first and second detection cells, such that an output of the second detection cell is representative of power of a radio-frequency signal received at the signal input with an adjustment for one or more non-signal effects as measured by the first detection cell and the error amplifier.

### Claim 18 (depends on 17)

The packaged module of claim 17 further including a radio-frequency circuit associated with the radio-frequency signal.

### Claim 19 (depends on 18)

The packaged module of claim 18 wherein both of the power detector and the radio-frequency circuit are implemented on a single semiconductor die.

### Claim 20 (depends on 18)

The packaged module of claim 18 wherein the power detector is implemented on a first semiconductor die, and the radio-frequency circuit is implemented on a second semiconductor die.

### Claim 21

(canceled)