# US 2019/0376359 A1 · Hydrophobic dielectric sealing materials

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- Number: US 2019/0376359 A1
- Document ID: US20190376359A1
- Status: Published application
- Kind: A1
- Application number: 16/004,391
- Filed: 2018-06-10
- Published: 2019-12-12
- Earliest claimed: 2018-06-10
- Assignees: Pa&E, Hermetic Solutions Group, LLC
- Applicants: PA&E, Hermetic Solutions Group, LLC
- Inventors: Hua Xia; Nelson Settles; Gaery Rutherford
- Web page: https://patentgrep.com/patent/US20190376359A1

## CPC

- C04B 28/00: Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
- C09K 3/1003: {Pure inorganic mixtures}
- C09K 8/422: {specially adapted for sealing expandable pipes, e.g. of the non-hardening type}
- C09K 8/46: containing inorganic binders, e.g. Portland cement
- E21B 47/13: by electromagnetic energy, e.g. radio frequency
- C04B 2111/27: Water resistance, i.e. waterproof or water-repellent materials
- C04B 2111/90: Electrical properties
- C09K 2200/0239: Oxides, hydroxides, carbonates
- C09K 2200/0247: Silica
- C09K 2200/0273: Boron-containing compounds
- E21B 47/017: Protecting measuring instruments
- G01V 3/34: Transmitting data to recording or processing apparatus; Recording data
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- G01V: GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS (means for indicating the location of accidentally buried, e.g. snow-buried, persons A63B29/02)

## Abstract

A hydrophobic dielectric sealing material is provided that is especially suitable for use in extreme environments such as for enabling downhole electrical feedthrough integrated logging tools reliable operation, especially, in a water or water-mud filled wellbore as first scenario or in moisture-rich oil-mud filled wellbores. In some embodiments, a hydrophobic dielectric sealing material may include: H3BO3 10-60 mol %; Bi2O3 10-50 mol %; MO 10-50 mol %; SiO2 0-15 mol %; and optionally one or more rare earth oxides 0-5 mol %. A method for making hydrophobic sealing material includes selecting water insoluble raw materials, form tetragonal phase dominated phase, and enlarge band-gap with wide-band-gap material. The morphology of the sealing material is preferably a tetrahedral phase dominated covalent bond network for obtaining high electrical insulation resistance, dielectric strength and hydrophobicity, and high mechanical strength in against downhole 30,000 PSI/300° C. water-based hostile environments.

## Claims

### Claim 1

A hydrophobic dielectric sealing material, the dielectric sealing material having a chemical composition comprising:
H3BO3 10-60 mol %;
Bi2O3 10-50 mol %;
MO 10-50 mol %;
SiO2 0-15 mol %; and
a rare earth oxide 0-5 mol %.

### Claim 2 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material is a ternary-compositional system of x.Bi2O3-(1−x−y).MO-y.SiO2 and x H3BO3-y.Bi2O3-(1−x−y).MO.

### Claim 3 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material is a quaternary-compositional system of x.H3BO3-y.Bi2O3-(1−x−y−z).MO-z.SiO2.

### Claim 4 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material is a quinary-compositional system of x.H3BO3-y.Bi2O3-(1−x−y−z−δ).MO-z.SiO2—δ.REO.

### Claim 5 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material has a glass transition temperature between 350° C. to 550° C., a thermal expansion coefficient between 6.0×10−6 m/m·° C. to 12.5×10−6 m/m·° C., a mass density between 4.5 g/cm3 and 7.6 g/cm3, and a Young's modulus between 65 GPa and 80 GPa.

### Claim 6 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material comprises a wide band gap based oxide material selected from the group consisting of TiO2, BaO, ZnO, ZrO2, SiO2, SnO2, Ga2O3, and Fe2O3.

### Claim 7 (depends on 6)

The dielectric sealing material of claim 6, wherein the wide band gap oxide has an energy band gap that is between 3.5 eV and 9.0 eV.

### Claim 8 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material comprises monoclinic and tetragonal mixed phase morphology.

### Claim 9 (depends on 8)

The dielectric sealing material of claim 8, wherein the monoclinic phase consists of triangle clusters.

### Claim 10 (depends on 8)

The dielectric sealing material of claim 8, wherein the tetragonal phase consists of tetrahedral clusters.

### Claim 11 (depends on 8)

The dielectric sealing material of claim 8, wherein the monoclinic and tetrahedral mixed phase are composed of the triangle and tetragonal mixed clusters.

### Claim 12 (depends on 8)

The dielectric sealing material of claim 8, having a resistivity that is greater than 1.0×1012 Ω-cm at 177° C.

### Claim 13 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material comprises a tetrahedral phase dominated microstructure.

### Claim 14 (depends on 13)

The dielectric sealing material of claim 13, having a resistivity amplitude of 1.0×1018-1.0×1019 Ω-cm at 0° C., and having greater than 5.0×1010 Ω-cm resistivity at 300° C.

### Claim 15 (depends on 10)

The dielectric sealing material of claim 10, having ternary and quaternary multi-compositional material combinations.

### Claim 16 (depends on 1)

The dielectric sealing material of claim 1, wherein the dielectric sealing material comprises a tetrahedral covalent-bond network.

### Claim 17 (depends on 16)

The dielectric sealing material of claim 16, wherein the dielectric sealing material is doped with wide-band-gap material.

### Claim 18 (depends on 16)

The dielectric sealing material of claim 16, wherein the dielectric sealing material is composed of microstructural tetrahedral clusters with typical size between 0.1 and three micrometers.

### Claim 19 (depends on 16)

The dielectric sealing material of claim 16, wherein the tetrahedral covalent-bond network may be primarily composed of tetrahedral phase and microstructures.

### Claim 20

A hydrophobic dielectric sealing material system comprising a binary-compositional system having at least one of x.H3BO3-(1−x).Bi2O3 and x.B2O3-(1−x).Bi2O3.
