# US 2019/0376207 A1 · ScAlMgO4 SINGLE CRYSTAL AND DEVICE

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- Number: US 2019/0376207 A1
- Document ID: US20190376207A1
- Status: Published application
- Kind: A1
- Application number: 16/433,707
- Filed: 2019-06-06
- Published: 2019-12-12
- Earliest claimed: 2018-06-07
- Assignees: Panasonic Corporation
- Applicants: Panasonic Corporation
- Inventors: Masaki NOBUOKA; Kentaro MIYANO; Naoya RYOKI; Takehiro ASAHI; Akio UETA
- Web page: https://patentgrep.com/patent/US20190376207A1

## CPC

- C30B 29/22: Complex oxides
- C30B 15/00: Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00)
- C30B 15/14: Heating of the melt or the crystallised materials
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An object is to provide a high-quality ScAlMgO4 single crystal and a device. The ScAlMgO4 single crystal includes Sc, Al, Mg, and O, in which the atomic percentage ratio of Mg to Al, Mg/Al (atom %/atom %), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and less than 1.1.

## Claims

### Claim 1

A ScAlMgO4 single crystal, comprising Sc, Al, Mg, and O as constituent atoms, wherein
an atomic percentage ratio of Mg to Al in the constituent atoms, Mg/Al (atom %/atom %), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and less than 1.1.

### Claim 2 (depends on 1)

The ScAlMgO4 single crystal according to claim 1, wherein the Mg/Al (atom %/atom %) as measured by the inductively coupled plasma emission spectrometric method is 1.03 or more and 1.07 or less.

### Claim 3 (depends on 1)

A device comprising the ScAlMgO4 single crystal according to claim 1, and a device structure disposed on a (0001) plane of the ScAlMgO4 single crystal.

### Claim 4 (depends on 3)

The device according to claim 3, wherein the device structure is a semiconductor laser diode or a light-emitting diode.

### Claim 5 (depends on 2)

A device comprising the ScAlMgO4 single crystal according to claim 2, and a device structure disposed on a (0001) plane of the ScAlMgO4 single crystal.

### Claim 6 (depends on 5)

The device according to claim 5, wherein the device structure is a semiconductor laser diode or a light-emitting diode.