# US 2019/0376205 A1 · Method of producing silicon single crystal, and silicon single crystal wafer

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- Number: US 2019/0376205 A1
- Document ID: US20190376205A1
- Status: Published application
- Kind: A1
- Application number: 16/463,537
- Filed: 2017-11-13
- Published: 2019-12-12
- Earliest claimed: 2016-12-09
- Assignees: Shin-Etsu Handotai Co., Ltd.
- Applicants: Shin-Etsu Handotai Co., Ltd.
- Inventors: Kosei SUGAWARA; Ryoji HOSHI
- Web page: https://patentgrep.com/patent/US20190376205A1

## CPC

- C30B 15/20: Controlling or regulating (controlling or regulating in general G05)
- C30B 15/305: {Stirring of the melt}
- C30B 29/06: Silicon
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A method of producing a silicon single crystal, including pulling a silicon single crystal by Czochralski method while a magnetic field is applied to a raw material melt, including: setting a diameter on pulling the silicon single crystal to 300 mm or more, setting a growth axis direction of the silicon single crystal to <111>, and growing the silicon single crystal so as to satisfy a relation of 1096/D−(0.134×M+80×R)/D>0.7, wherein D [mm] is the diameter on pulling the silicon single crystal, M [Gauss] is a central magnetic field strength at a surface of the raw material melt, and R [rpm] is a rotation rate of the silicon single crystal. This makes it possible to produce a <111> crystal with favorable macroscopic RRG distribution and microscopic variation of resistivity.

## Claims

### Claim at position 1

-5. (canceled)

### Claim 6

A method of producing a silicon single crystal, including pulling a silicon single crystal by Czochralski method while a magnetic field is applied to a raw material melt, comprising:
setting a diameter on pulling the silicon single crystal to 300 mm or more,
setting a growth axis direction of the silicon single crystal to <111>, and growing the silicon single crystal so as to satisfy a relation of 1096/D−(0.134×M+80×R)/D>0.7, wherein D [mm] is the diameter on pulling the silicon single crystal, M [Gauss] is a central magnetic field strength at a surface of the raw material melt, and R [rpm] is a rotation rate of the silicon single crystal.

### Claim 7 (depends on 6)

The method of producing a silicon single crystal according to claim 6, wherein the silicon single crystal is grown so as to satisfy a relation of 1096/D−(0.134×M+80×R)/D>1.

### Claim 8 (depends on 6)

The method of producing a silicon single crystal according to claim 6, wherein the diameter on pulling the silicon single crystal D is set to Dp/{1096−(0.134×M+80×R)} in case of 0.7<1096/Dp−(0.134×M+80×R)/Dp<1, where Dp [mm] is a diameter of a product to be collected.

### Claim 9 (depends on 6)

The method of producing a silicon single crystal according to claim 6, wherein the magnetic field applied is a horizontal magnetic field.

### Claim 10 (depends on 7)

The method of producing a silicon single crystal according to claim 7, wherein the magnetic field applied is a horizontal magnetic field.

### Claim 11 (depends on 8)

The method of producing a silicon single crystal according to claim 8, wherein the magnetic field applied is a horizontal magnetic field.

### Claim 12

A (111) silicon single crystal wafer with a diameter of 300 mm or more, comprising a (111) lateral growth portion in 70% or more of a wafer surface.