# US 2019/0376187 A1 · METHOD FOR FORMING Si-CONTAINING FILM > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0376187 A1 - Document ID: US20190376187A1 - Status: Published application - Kind: A1 - Application number: 16/486,258 - Filed: 2018-02-13 - Published: 2019-12-12 - Earliest claimed: 2017-02-16 - Assignees: L'Air Liquide, Societe Anonyme pour I'Etude et I'Exploitation des Precedes Georges Claude - Applicants: L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Precédés Georges Claude - Inventors: Naoto NODA; Jean-Marc GIRARD; Ivan OSCHCHEPKOV; Guillaume DURIEUX - Web page: https://patentgrep.com/patent/US20190376187A1 ## CPC - C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23C 16/24: Deposition of silicon only - C23C 16/325: {Silicon carbide} - C23C 16/345: {Silicon nitride} - C23C 16/402: {Silicon dioxide} - C23C 16/56: After-treatment - H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)} - H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract To provide a deposition process whereby a seamless Si-containing film having a small number of voids can be formed on a substrate having a fine trench at a lower temperature. A method for forming an Si-containing film forms an Si-containing film on a substrate by a chemical vapor deposition process, wherein the chemical vapor deposition process includes a step (a) that reacts a first feed gas having one or more Si—Si bonds in a chemical vapor deposition chamber in the presence of a Lewis base catalyst. ## Claims ### Claim 1 A method for forming an Si-containing film that forms an Si-containing film on a substrate by a chemical vapor deposition process, the chemical vapor deposition process comprising a step (a) that reacts a first feed gas having one or more Si—Si bonds in a chemical vapor deposition chamber in the presence of a Lewis base catalyst. ### Claim 2 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the step (a) produces a silylene in the chemical vapor deposition chamber as a reaction intermediate. ### Claim 3 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the total content ratio of a nitrogen atom, a carbon atom, a boron atom, a sulfur atom, and a phosphorus atom derived from the Lewis base in the Si-containing film is 0 to 5%. ### Claim 4 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the chemical vapor deposition process is effected at 0 to 400° C. ### Claim 5 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the chemical vapor deposition process is a deposition process that forms an Si-containing film on a substrate that has a recess to fill at least part of the recess with the Si-containing film, and the recess is filled with a polymer obtained by condensation of the first feed gas in a state in which the polymer has fluidity. ### Claim 6 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the first feed gas is a compound represented by the following general formula (1), SiaHbXc (1) wherein X is a halogen atom, a is a number from 2 to 6, b is a number from 0 to 13, and c is a number from 1 to 14. ### Claim 7 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the first feed gas is at least one gas selected from a group consisting of hexachlorodisilane, pentachlorodisilane, tetrachlorodisilane, trichlorodisilane, dichlorodisilane, monochlorodisilane, octachlorotrisilane, heptachlorotrisilane, hexachlorotrisilane, pentachlorotrisilane, tetrachlorotrisilane, trichlorotrisilane, dichlorotrisilane, and monochlorotrisilane. ### Claim 8 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the Lewis base is at least one compound selected from a group consisting of a tertiary amine and a heterocyclic amine. ### Claim 9 (depends on 8) The method for forming an Si-containing film according to claim 8, wherein the tertiary amine and the heterocyclic amine are alkylamines having 3 to 24 carbon atoms. ### Claim 10 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the Lewis base is at least one compound selected from a group consisting of trimethylamine, triethylamine, pyridine, pyrimidine, pyrazine, and derivatives thereof. ### Claim 11 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the chemical vapor deposition process is effected in a state in which the pressure inside the chemical vapor deposition chamber is 0.1 Torr to atmospheric pressure. ### Claim 12 (depends on 1) The method for forming an Si-containing film according to claim 1, the chemical vapor deposition process further comprising: a step (b) that adds a second feed gas, the second feed gas being at least one compound selected from a group consisting of a compound having at least one carbon-carbon unsaturated bond, an inert gas, a reducing gas, an oxidizing gas, and the Lewis base. ### Claim 13 (depends on 12) The method for forming an Si-containing film according to claim 12, wherein the second feed gas is a compound having 2 to 10 carbon atoms. ### Claim 14 (depends on 12) The method for forming an Si-containing film according to claim 12, wherein the second feed gas is a halogenated hydrocarbon. ### Claim 15 (depends on 12) The method for forming an Si-containing film according to claim 12, wherein the second feed gas is a compound represented by the following general formula (2), CaHbXc (2) wherein X is a halogen atom, a is a number from 2 to 9, b is a number from 0 to 19, and c is a number from 1 to 20. ### Claim 16 (depends on 1) The method for forming an Si-containing film according to claim 1, the chemical vapor deposition process further comprising: a step (c) that performs a treatment in the presence of at least one compound selected from a group consisting of an inert gas, a reducing gas, an oxidizing gas, a nitriding gas, and the Lewis base, and/or a step (d) that applies an energy beam, wherein the energy beam is one of a particle beam including an ion beam, an electron beam and a neutron beam, and ultraviolet light. ### Claim 17 (depends on 16) The method for forming an Si-containing film according to claim 16, wherein the step (c) is performed at a temperature of 0 to 800° C. ### Claim 18 (depends on 5) The method for forming an Si-containing film according to claim 5, wherein, when an Si-containing film is formed on a substrate that has a recess, the thickness of the Si-containing film formed on the bottom surface of the recess is larger than the thickness of the Si-containing film formed on the side surface of the recess. ### Claim 19 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein an oxygen-containing impurity content in the Lewis base is 0 to 1 wt %. ### Claim 20 (depends on 1) The method for forming an Si-containing film according to claim 1, wherein the substrate has a recess having an aspect ratio (depth:width) of 1:1 to 20:1.