# US 2019/0357346 A1 · Heat dissipation substrate, method for preparing same, application of same, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0357346 A1 - Document ID: US20190357346A1 - Status: Published application - Kind: A1 - Application number: 16/474,643 - Filed: 2017-12-08 - Published: 2019-11-21 - Earliest claimed: 2016-12-29 - Assignees: BYD Company Limited - Applicants: BYD Company Limited - Inventors: Junlan LIAN; Hongye LIN - Web page: https://patentgrep.com/patent/US20190357346A1 ## CPC - H05K 1/0209: {External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings} - H05K 1/021: {Components thermally connected to metal substrates or heat-sinks by insert mounting} - H05K 1/0212: {Printed circuits or mounted components having integral heating means} - H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass} - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 70/02: of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) - H10W 72/00: Interconnections or connectors in packages - H10W 72/019: {of bond pads} - H05K 2201/066: Heatsink mounted on the surface of the printed circuit board [PCB] - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 40/259: {Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 72/01325: {in solid form} - H10W 72/07553: {changes in shapes} - H10W 72/07554: {changes in dispositions} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics} - H10W 72/537: {Multiple bond wires having different shapes} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/551: {Materials of bond wires} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure A heat dissipation substrate includes: a metal-ceramic composite board, where the metal-ceramic composite board is a metal layer wrapping a ceramic body; a metal oxide layer integrated with the metal layer and formed on an outer surface of the metal layer; and a conductive layer formed on at least a part of an outer surface of the metal oxide layer, where a conductive trace is formed on the conductive layer, and is used to connect with and bear a chip. ## Claims ### Claim 1 A heat dissipation substrate, comprising: a metal-ceramic composite board, wherein the metal-ceramic composite board is a metal layer wrapping a ceramic body; a metal oxide layer integrated with the metal layer and formed on an outer surface of the metal layer; and a conductive layer formed on at least a part of an outer surface of the metal oxide layer, wherein a conductive trace is formed on the conductive layer, and is configured to connect with a chip and bear a chip. ### Claim 2 (depends on 1) The heat dissipation substrate according to claim 1, wherein the metal oxide layer is formed by directly oxidizing the metal layer. ### Claim 3 (depends on 1) The heat dissipation substrate according to claim 1, wherein the ceramic body is a SiC ceramic body or a Si ceramic body; the metal layer is an Al metal layer, an Mg metal layer, or a Ti metal layer; the metal oxide layer is an aluminum oxide layer, a magnesium oxide layer, or a titanium oxide layer; and the conductive layer is a copper metal layer or a silver metal layer. ### Claim 4 (depends on 3) The heat dissipation substrate according to claim 3, wherein a thickness of the metal layer is about 20 μm to about 500 μm; a thickness of the metal oxide layer is about 5 μm to about 300 μm; and the a thickness of the conductive layer is about 3 μm to about 400 μm. ### Claim 5 (depends on 1) The heat dissipation substrate according to claim 1, wherein a bonding strength between the metal oxide layer and the metal layer is above 20 MPa. ### Claim 6 (depends on 1) The heat dissipation substrate according to claim 1, wherein the conductive layer is disposed on a side of the heat dissipation substrate. ### Claim 7 (depends on 6) The heat dissipation substrate according to claim 6, wherein the thickness of the metal oxide layer on the side of the heat dissipation substrate on which the conductive layer is disposed is greater than or equal to the thickness of the metal oxide layer on another side opposite to the side. ### Claim 8 (depends on 1) A method for preparing the heat dissipation substrate according to claim 1, comprising: directly performing metal oxidation on a metal-ceramic composite board, wherein the metal-ceramic composite board is a composite board material in which a metal layer wraps a ceramic body; forming a metal oxide layer integrated with the metal layer on an outer surface of the metal layer; and forming a conductive layer on at least a part of an outer surface of the metal oxide layer. ### Claim 9 (depends on 8) The method according to claim 8, wherein the metal oxidation comprises anodic oxidation or micro-arc oxidation. ### Claim 10 (depends on 8) The method for preparing the heat dissipation substrate according to claim 8, wherein the step of forming the conductive layer comprises: performing surface masking on the metal oxide layer, then spraying conductive metal to obtain a conductive trace, and forming the conductive layer; or spraying or sputtering conductive metal on the metal oxide layer, then performing mask etching to obtain a conductive trace, and forming the conductive layer. ### Claim 11 (depends on 8) The method for preparing the heat dissipation substrate according to claim 8, wherein the thickness of the formed metal oxide layer is about 5 μm to about 300 μm; and the thickness of the formed conductive layer is about 3 μm to about 400 μm. ### Claim 12 (depends on 1) An application of the heat dissipation substrate according to claim 1 in an electronic device. ### Claim 13 (depends on 1) An electronic device, comprising: a heat dissipation substrate, having a conductive layer; and a soldering layer and a chip sequentially stacked on at least a part of an outer surface of the conductive layer, wherein the chip is connected to the conductive layer through a conducting wire; and the heat dissipation substrate is the heat dissipation substrate according to claim 1. ### Claim 14 (depends on 2) The heat dissipation substrate according to claim 2, wherein the ceramic body is a SiC ceramic body or a Si ceramic body; the metal layer is an Al metal layer, an Mg metal layer, or a Ti metal layer; the metal oxide layer is an aluminum oxide layer, a magnesium oxide layer, or a titanium oxide layer; and the conductive layer is a copper metal layer or a silver metal layer. ### Claim 15 (depends on 2) The heat dissipation substrate according to claim 2, wherein a bonding strength between the metal oxide layer and the metal layer is above 20 MPa. ### Claim 16 (depends on 15) The heat dissipation substrate according to claim 15, wherein the conductive layer is disposed on a side of the heat dissipation substrate. ### Claim 17 (depends on 16) A method for preparing the heat dissipation substrate according to claim 16, comprising: directly performing metal oxidation on a metal-ceramic composite board, wherein the metal-ceramic composite board is a composite board material in which a metal layer wraps a ceramic body; forming a metal oxide layer integrated with the metal layer on an outer surface of the metal layer; and forming a conductive layer on at least a part of an outer surface of the metal oxide layer. ### Claim 18 (depends on 17) The method according to claim 17, wherein the metal oxidation comprises anodic oxidation or micro-arc oxidation. ### Claim 19 (depends on 18) The method according to claim 18, wherein the step of forming the conductive layer comprises: performing surface masking on the metal oxide layer, then spraying conductive metal to obtain a conductive trace, and forming the conductive layer; or spraying or sputtering conductive metal on the metal oxide layer, then performing mask etching to obtain a conductive trace, and forming the conductive layer. ### Claim 20 (depends on 18) The method according to claim 18, wherein the thickness of the formed metal oxide layer is about 5 μm to about 300 μm; and the thickness of the formed conductive layer is about 3 μm to about 400 μm.