# US 2019/0356294 A1 · Solenoid structure with conductive pillar technology

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- Number: US 2019/0356294 A1
- Document ID: US20190356294A1
- Status: Published application
- Kind: A1
- Application number: 15/982,655
- Filed: 2018-05-17
- Published: 2019-11-21
- Earliest claimed: 2018-05-17
- Assignees: QUALCOMM Incorporated
- Applicants: QUALCOMM Incorporated
- Inventors: Nosun PARK; Changhan Hobie YUN; Jonghae KIM; Niranjan Sunil MUDAKATTE; Xiaoju YU; Wei-Chuan CHEN
- Web page: https://patentgrep.com/patent/US20190356294A1

## CPC

- H01F 17/0013: {with stacked layers}
- H03H 7/0115: {comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence)}
- H01F 27/40: Structural association with built-in electric component, e.g. fuse
- H03H 1/0007: {of radio frequency interference filters}
- H03H 3/00: Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H10D 1/20: Inductors
- H10D 1/692: {Electrodes}
- H10D 86/85: characterised by only passive components
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10W 74/016: {using moulds}
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- H10W 74/47: comprising organic materials, e.g. plastics or resins
- H10W 90/00: Package configurations
- H01F 2017/002: {Details of via holes for interconnecting the layers}
- H03H 2001/005: {Wound, ring or feed-through type inductor}
- H10P 72/7416: {used during dicing or grinding}
- H10W 72/072: {of bump connectors}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/728: {between a chip and a stacked discrete passive device, e.g. resistors, capacitors or inductors}
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A three-dimensional (3D) solenoid structure includes a first inductor portion having a first surface and a second surface opposite the first surface. The 3D solenoid structure further includes a first capacitor portion, a first inductor pillar, at least one capacitor pillar, a second inductor portion, a second inductor pillar and a first inductor bonding interface. The first inductor pillar is coupled to the first surface of the first inductor portion. The capacitor pillar(s) is coupled to the first capacitor portion. The second inductor portion includes a first surface and a second surface opposite the first surface. The second inductor pillar is coupled to the first surface of the second inductor portion. The first inductor bonding interface, between the first inductor pillar and the second inductor pillar, couples together the first inductor portion and the second inductor portion.

## Claims

### Claim 1

A three-dimensional solenoid structure, comprising:
a first inductor portion including a first surface and a second surface opposite the first surface;
a first capacitor portion;
a first inductor pillar coupled to the first surface of the first inductor portion;
at least one capacitor pillar coupled to the first capacitor portion;
a second inductor portion including a first surface and a second surface opposite the first surface;
a second inductor pillar coupled to the first surface of the second inductor portion; and
a first inductor bonding interface between the first inductor pillar and the second inductor pillar to couple the first inductor portion and the second inductor portion.

### Claim 2 (depends on 1)

The three-dimensional solenoid structure of claim 1, further comprising a molding compound in between the first inductor portion and the second inductor portion.

### Claim 3 (depends on 2)

The three-dimensional solenoid structure of claim 2, in which the molding compound comprises epoxy molding compound or capillary underfill material.

### Claim 4 (depends on 1)

The three-dimensional solenoid structure of claim 1, further comprising a glass substrate, in which the second surface of the first inductor portion is on the glass substrate and the first capacitor portion is on the glass substrate.

### Claim 5 (depends on 1)

The three-dimensional solenoid structure of claim 1, in which the first capacitor portion comprises a metal-insulator-metal (MIM) capacitor.

### Claim 6 (depends on 1)

The three-dimensional solenoid structure of claim 1, further comprising a second capacitor portion, at least one capacitor pillar coupled to the second capacitor portion, the first capacitor portion opposite the second capacitor portion.

### Claim 7 (depends on 6)

The three-dimensional solenoid structure of claim 6, further comprising a capacitor bonding interface between the at least one capacitor pillar coupled to the first capacitor portion and the at least one capacitor pillar coupled to the second capacitor portion to couple the first capacitor portion and the second capacitor portion.

### Claim 8 (depends on 1)

The three-dimensional solenoid structure of claim 1, further comprising:
a third inductor pillar coupled to the first surface of the first inductor portion;
a fourth inductor pillar coupled to the first surface of the second inductor portion; and
a second inductor bonding interface between the third inductor pillar and the fourth inductor pillar to couple the first inductor portion and the second inductor portion.

### Claim 9

A method of fabricating a three-dimensional solenoid structure comprising:
fabricating a first inductor portion including a first surface and a second surface opposite the first surface;
fabricating a first capacitor portion;
fabricating a first inductor pillar coupled to the first surface of the first inductor portion;
fabricating at least one capacitor pillar coupled to the first capacitor portion;
fabricating a second inductor portion including a first surface and a second surface opposite the first surface;
fabricating a second inductor pillar coupled to the first surface of the second inductor portion; and
fabricating a first inductor bonding interface between the first inductor pillar and the second inductor pillar to couple the first inductor portion and the second inductor portion.

### Claim 10 (depends on 9)

The method of claim 9, further comprising depositing a molding compound between the first inductor portion and the second inductor portion.

### Claim 11 (depends on 9)

The method of claim 9, further comprising fabricating a glass substrate, in which the second surface of the first inductor portion is on the glass substrate and the first capacitor portion is on the glass substrate.

### Claim 12 (depends on 9)

The method of claim 9, further comprising fabricating a second capacitor portion, at least one capacitor pillar coupled to the second capacitor portion, the first capacitor portion opposite the second capacitor portion.

### Claim 13 (depends on 12)

The method of claim 12, further comprising fabricating a capacitor bonding interface between the at least one capacitor pillar coupled to the first capacitor portion and the at least one capacitor pillar coupled to the second capacitor portion to couple the first capacitor portion and the second capacitor portion.

### Claim 14 (depends on 9)

The method of claim 9, further comprising:
fabricating a third inductor pillar coupled to the first surface of the first inductor portion;
fabricating a fourth inductor pillar coupled to the first surface of the second inductor portion; and
fabricating a second inductor bonding interface between the third inductor pillar and the fourth inductor pillar to couple the first inductor portion and the second inductor portion.

### Claim 15

A three-dimensional solenoid structure, comprising:
a first inductor portion including a first surface and a second surface opposite the first surface;
a first capacitor portion;
a first inductor pillar coupled to the first surface of the first inductor portion;
at least one capacitor pillar coupled to the first capacitor portion;
a second inductor portion including a first surface and a second surface opposite the first surface;
a second inductor pillar coupled to the first surface of the second inductor portion; and
means for bonding the first inductor pillar and the second inductor pillar to couple the first inductor portion and the second inductor portion.

### Claim 16 (depends on 15)

The three-dimensional solenoid structure of claim 15, further comprising a molding compound between the first inductor portion and the second inductor portion.

### Claim 17 (depends on 16)

The three-dimensional solenoid structure of claim 16, in which the molding compound comprises epoxy molding compound or capillary underfill material.

### Claim 18 (depends on 15)

The three-dimensional solenoid structure of claim 15, further comprising a glass substrate on which the second surface of the first inductor portion and the first capacitor portion the glass substrate reside.

### Claim 19 (depends on 15)

The three-dimensional solenoid structure of claim 15, in which the first capacitor portion comprises a metal-insulator-metal (MIM) capacitor.

### Claim 20 (depends on 15)

The three-dimensional solenoid structure of claim 15, further comprising a second capacitor portion, at least one capacitor pillar coupled to the second capacitor portion, the first capacitor portion opposite the second capacitor portion.
