# US 2019/0356274 A1 · Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture

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- Number: US 2019/0356274 A1
- Document ID: US20190356274A1
- Status: Published application
- Kind: A1
- Application number: 15/984,137
- Filed: 2018-05-18
- Published: 2019-11-21
- Earliest claimed: 2018-05-18
- Assignees: NXP USA, Inc.
- Applicants: NXP USA, Inc.
- Inventors: Ning ZHU; Jeffrey Spencer ROBERTS; Damon G. HOLMES; Jeffrey Kevin JONES
- Web page: https://patentgrep.com/patent/US20190356274A1

## CPC

- H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers}
- H03F 1/565: {using inductive elements}
- H03F 1/086: {with FET's}
- H03F 3/195: in integrated circuits
- H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)}
- H03F 3/213: in integrated circuits
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 72/075: {of bond wires}
- H10W 90/00: Package configurations
- H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
- H03F 2200/225: the input circuit of an amplifying stage comprising an LC-network
- H03F 2200/246: A series resonance being added in shunt in the input circuit, e.g. base, gate, of an amplifier stage, e.g. as a trap
- H03F 2200/267: A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
- H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
- H03F 2200/391: the output circuit of an amplifying stage comprising an LC-network
- H03F 2200/402: A series resonance being added in shunt in the output circuit, e.g. base, gate, of an amplifier stage
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H03F 2200/552: the amplifier being made for video applications
- H03F 2200/75: the amplifier stage being a common source configuration MOSFET
- H10W 44/206: {Wires}
- H10W 44/234: {Arrangements for impedance matching}
- H10W 44/241: {for passive devices or passive elements}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/354: {comprising polymers}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/551: {Materials of bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/759: {between a chip and a laterally-adjacent discrete passive device}
- H03F: AMPLIFIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an input impedance matching circuit, and an input-side harmonic termination circuit. The input impedance matching circuit includes a harmonic termination circuit, which in turn includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. The input impedance matching circuit also includes a second inductance (a second plurality of bondwires), a third inductance (a third plurality of bondwires), and a second capacitance coupled in a T-match configuration between the input lead and the transistor input. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.

## Claims

### Claim 1

A radio frequency (RF) amplifier with a first amplification path that comprises:
a transistor die with a transistor and a transistor input terminal;
an input-side impedance matching circuit coupled between the transistor input terminal and an input of the first amplification path, wherein the input-side impedance matching circuit includes
an input-side harmonic termination circuit comprising a first inductive element and a first capacitance connected in series between the transistor input terminal and a ground reference node, wherein the first inductive element includes a first plurality of bondwires, and the input-side harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier, and
a second inductive element and a second capacitance connected in series between the transistor input terminal and the ground reference node, wherein the second inductive element includes a second plurality of bondwires, and
a third inductive element connected between the input of the first amplification path and the second capacitance, wherein the third inductive element includes a third plurality of bondwires.

### Claim 2 (depends on 1)

The RF amplifier of claim 1, wherein the transistor is a gallium nitride transistor.

### Claim 3 (depends on 1)

The RF amplifier of claim 1, wherein the first and second capacitances are metal-insulator-metal capacitors.

### Claim 4 (depends on 1)

The RF amplifier of claim 1, wherein in the input-side harmonic termination circuit, the first inductive element is directly connected to the first capacitance.

### Claim 5 (depends on 1)

The RF amplifier of claim 1, wherein the input-side harmonic termination circuit resonates at a second harmonic frequency of the fundamental frequency of operation.

### Claim 6 (depends on 1)

The RF amplifier of claim 1, wherein:
the first capacitance value is in a range of 1 picofarad to 100 picofarads;
the second capacitance has a second capacitance value in a range of 5 picofarads to 120 picofarads;
the first inductive element has an inductance value in a range of 20 picohenries to 1 nanohenry; and
a series combination of the second and third inductive elements has an inductance value in a range of 50 picohenries to 3 nanohenries.

### Claim 7

A radio frequency (RF) amplifier with a first amplification path that comprises:
a transistor die with a transistor and a transistor input terminal;
an input-side impedance matching circuit coupled between the transistor input terminal and an input of the first amplification path, wherein the input-side impedance matching circuit includes
an input-side harmonic termination circuit comprising a first inductive element and a first capacitance connected in series between the transistor input terminal and a ground reference node, wherein the first inductive element includes a first plurality of bondwires, and the input-side harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier, and
a second inductive element and a second capacitance connected in series between the transistor input terminal and the ground reference node, wherein the second inductive element includes a second plurality of bondwires, and
a third inductive element connected between the input of the first amplification path and the second capacitance, wherein the third inductive element includes a third plurality of bondwires; and
a video bandwidth circuit coupled to a connection node between the second inductive element and the second capacitance, wherein the video bandwidth circuit includes a plurality of components, wherein the plurality of components includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the connection node and the ground reference node.

### Claim 8 (depends on 7)

The RF amplifier of claim 7, wherein the video bandwidth circuit further includes a bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.

### Claim 9 (depends on 8)

The RF amplifier of claim 8, wherein the bypass capacitor is coupled in parallel across the envelope inductor, and wherein the envelope inductor and the bypass capacitor form a parallel resonant circuit in proximity to a center operating frequency of the RF amplifier.

### Claim 10 (depends on 1)

The RF amplifier of claim 1, wherein the transistor further includes a transistor output terminal, and the transistor has a drain-source capacitance below 0.2 picofarads per watt.

### Claim 11

A radio frequency (RF) amplifier with a first amplification path that comprises:
a transistor die with a transistor, a transistor input terminal, and a transistor output terminal, wherein the transistor has a drain-source capacitance below 0.2 picofarads per watt
an input-side impedance matching circuit coupled between the transistor input terminal and an input of the first amplification path, wherein the input-side impedance matching circuit includes
an input-side harmonic termination circuit comprising a first inductive element and a first capacitance connected in series between the transistor input terminal and a ground reference node, wherein the first inductive element includes a first plurality of bondwires, and the input-side harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier,
a second inductive element and a second capacitance connected in series between the transistor input terminal and the ground reference node, wherein the second inductive element includes a second plurality of bondwires, and
a third inductive element connected between the input of the first amplification path and the second capacitance, wherein the third inductive element includes a third plurality of bondwires; and
an output-side impedance matching circuit coupled between the transistor output terminal and an output of the first amplification path, wherein the output-side impedance matching circuit includes
an output-side harmonic termination circuit comprising a fourth inductive element and a third capacitance connected in series between the transistor output terminal and the ground reference node, wherein an equivalent capacitance from a combination of the fourth inductive element and the third capacitance in series effectively increases the drain-source capacitance by at least 10 percent, the fourth inductive element includes a fourth plurality of bondwires, and the output-side harmonic termination circuit resonates at a harmonic frequency of the fundamental frequency of operation of the RF amplifier, and
a fifth inductive element and a fourth capacitance connected in series between the transistor output terminal and the ground reference node, wherein the fifth inductive element includes a fifth plurality of bondwires, and wherein the fifth plurality of bondwires and the fourth capacitance are directly connected.

### Claim 12 (depends on 1)

The RF amplifier of claim 1, further comprising:
a second amplification path;
a power divider with an input configured to receive an RF signal, a first output coupled to an input of the first amplification path, and a second output coupled to an input of the second amplification path, wherein the power divider is configured to divide the RF signal into a first RF signal that is provided to the first amplification path through the first output, and into a second RF signal that is provided to the second amplification path through the second output; and
a combining node configured to receive and combine amplified RF signals produced by the first and second amplification paths.

### Claim 13 (depends on 12)

The RF amplifier of claim 12, wherein the RF amplifier is a Doherty power amplifier.

### Claim 14

A packaged radio frequency (RF) amplifier device comprising:
a device substrate;
a first input lead coupled to the device substrate;
a first output lead coupled to the device substrate;
a first transistor die coupled to the device substrate, wherein the first transistor die includes a first transistor, a transistor input terminal coupled to the first input lead, and a transistor output terminal coupled to the first output lead, and wherein the first transistor has a drain-source capacitance below 0.2 picofarads per watt;
a first integrated passive device coupled to the device substrate; and
an input-side impedance matching circuit coupled between the transistor input terminal and the first input lead, wherein the input-side impedance matching circuit includes
an input-side harmonic termination circuit comprising a first inductive element and a first capacitance connected in series between the transistor input terminal and a ground reference node, wherein the first inductive element includes a first plurality of bondwires connected between the first transistor die and the first integrated passive device, and the input-side harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier device,
a second inductive element and a second capacitance connected in series between the transistor input terminal and the ground reference node, wherein the second inductive element includes a second plurality of bondwires, and
a third inductive element connected between the first input lead and the second capacitance, wherein the third inductive element includes a third plurality of bondwires.

### Claim 15 (depends on 14)

The packaged RF amplifier device of claim 14, wherein the second capacitance is integrally formed with the first integrated passive device.

### Claim 16 (depends on 15)

The packaged RF amplifier device of claim 15, wherein the first and second capacitances are metal-insulator-metal capacitors.

### Claim 17 (depends on 14)

The packaged RF amplifier device of claim 14, wherein the transistor is a gallium nitride transistor.

### Claim 18 (depends on 14)

The packaged RF amplifier device of claim 14, wherein the input-side harmonic termination circuit resonates at a second harmonic frequency of the fundamental frequency of operation.

### Claim 19 (depends on 14)

The packaged RF amplifier device of claim 14, wherein:
the first capacitance value is in a range of 1 picofarad to 100 picofarads;
the second capacitance has a second capacitance value in a range of 5 picofarads to 120 picofarads;
the first inductive element has an inductance value in a range of 20 picohenries to 1 nanohenry; and
a series combination of the second and third inductive elements has an inductance value in a range of 50 picohenries to 3 nanohenries.

### Claim 20 (depends on 14)

The packaged RF amplifier device of claim 14, further comprising:
a video bandwidth circuit coupled to a connection node between the second inductive element and the second capacitance, wherein the video bandwidth circuit includes a plurality of components, wherein the plurality of components includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the connection node and the ground reference node.

### Claim 21 (depends on 20)

The packaged RF amplifier device of claim 20, wherein the video bandwidth circuit further includes a bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.

### Claim 22 (depends on 14)

The packaged RF amplifier device of claim 14, further comprising:
a second integrated passive device coupled to the device substrate; and
an output-side impedance matching circuit coupled between the transistor output terminal and the first output lead, wherein the output-side impedance matching circuit includes
an output-side harmonic termination circuit comprising a fourth inductive element and a third capacitance connected in series between the transistor output terminal and the ground reference node, wherein an equivalent capacitance from a combination of the fourth inductive element and the third capacitance in series effectively increases the drain-source capacitance by at least 10 percent, the fourth inductive element includes a fourth plurality of bondwires connected between the first transistor die and the second integrated passive device, and the output-side harmonic termination circuit resonates at a harmonic frequency of the fundamental frequency of operation of the RF amplifier device, and
a fifth inductive element and a fourth capacitance connected in series between the transistor output terminal and the ground reference node, wherein the fifth inductive element includes a fifth plurality of bondwires, and wherein the fifth plurality of bondwires and the fourth capacitance are directly connected.

### Claim 23 (depends on 14)

The packaged RF amplifier device of claim 14, further comprising:
a second input lead coupled to the device substrate;
a second output lead coupled to the device substrate;
a second transistor die coupled to the device substrate, wherein the second transistor die includes a second transistor coupled between the second input lead and the second output lead; and
a second integrated passive device coupled to the device substrate between the second transistor die and the second input.

### Claim 24

A method of manufacturing an RF amplifier device, the method comprising the steps of:
coupling an input lead to a device substrate;
coupling an output lead to the device substrate;
coupling a transistor die to the device substrate between the input and output leads, wherein the transistor die includes a transistor and a transistor output terminal, and wherein the transistor has a drain-source capacitance below 0.2 picofarads per watt;
coupling a first integrated passive device to the device substrate between the transistor die and the input lead, wherein the first integrated passive device includes a first capacitance and a second capacitance, wherein the first capacitance includes a first capacitor that is integrally formed with the first integrated passive device, and the second capacitance also is integrally formed with the first integrated passive device;
creating an input-side harmonic termination circuit by connecting a first inductive element in the form of a first plurality of bondwires between the transistor input terminal and the first capacitance, wherein the input-side harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier device; and
creating a portion of an input-side impedance matching circuit by connecting a second inductive element in the form of a second plurality of bondwires between the transistor input terminal and the second capacitance, and connecting a third inductive element in the form of a third plurality of bondwires between the input lead and the second capacitance.

### Claim 25 (depends on 24)

The method of claim 24, further comprising:
coupling a second integrated passive device to the device substrate between the transistor die and the output lead, wherein the second integrated passive device includes a third capacitance and a fourth capacitance, wherein the third capacitance includes one or more third capacitors that are integrally formed with the second integrated passive device, and the fourth capacitance also is integrally formed with the second integrated passive device;
creating an output-side harmonic termination circuit by connecting a fourth inductive element in the form of a fourth plurality of bondwires between the transistor output terminal and the third capacitance, wherein an equivalent capacitance from a combination of the fourth inductive element and the third capacitance in series effectively increases the drain-source capacitance by at least 10 percent, and the output-side harmonic termination circuit resonates at a harmonic frequency of the fundamental frequency of operation of the RF amplifier device; and
creating a portion of an output-side impedance matching circuit by connecting a fifth inductive element in the form of a fifth plurality of bondwires between the transistor output terminal and the fourth capacitance, wherein the fifth plurality of bondwires and the fourth capacitance are directly connected.