# US 2019/0355902 A1 · Phase change memory stack with treated sidewalls

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- Number: US 2019/0355902 A1
- Document ID: US20190355902A1
- Status: Published application
- Kind: A1
- Application number: 16/266,777
- Filed: 2019-02-04
- Published: 2019-11-21
- Earliest claimed: 2014-04-30
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Tsz W. Chan; Yongjun Jeff Hu; Swapnil Lengade; Shu Qin; Everett Allen McTeer
- Web page: https://patentgrep.com/patent/US20190355902A1

## CPC

- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- G11C 13/0004: {comprising amorphous/crystalline phase transition cells}
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10B 63/24: {of the Ovonic threshold switching type}
- H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
- H10N 70/011: {Manufacture or treatment of multistable switching devices}
- H10N 70/023: {by chemical vapor deposition, e.g. MOCVD, ALD}
- H10N 70/043: {by implantation}
- H10N 70/063: {by etching of pre-deposited switching material layers, e.g. lithography}
- H10N 70/801: {Constructional details of multistable switching devices}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/841: {Electrodes}
- H10N 70/882: {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

## Claims

### Claim 1

A memory structure, comprising:
a memory stack comprising vertically stacked structures, including,
a first electrode, and
a variable resistance material comprising a chalcogenide material, the variable resistance material disposed to a first side of the first electrode in the vertically stacked structures of the memory stack,
wherein at least the first electrode has a sidewall surface doped with an adhesion species that intermixes with the material of the first electrode; and
a film comprising the material of the adhesion species formed over at least the doped sidewall surface of the first electrode.

### Claim 2 (depends on 1)

The memory device of claim 1, wherein the first electrode comprises carbon, and wherein the adhesion species comprises boron.

### Claim 3 (depends on 1)

The memory device of claim 1, further comprising a dielectric material liner implanted into the adhesion species film.

### Claim 4 (depends on 3)

The memory device of claim 3, wherein the adhesion species comprises boron and the implanted dielectric material liner comprises boron and nitride (BNX).

### Claim 5 (depends on 1)

The memory device of claim 1, wherein the variable resistance material comprises one or more of Germanium (Ge), Antimony (Sb), Tellurium (Te), Indium (In), Aluminum (Al), Gallium (Ga), Tin (Sn), Bismuth (Bi), Sulphur (S), Oxygen (O), Gold (Au), Palladium (Pd), Copper (Cu), Cobalt (Co), Silver (Ag), and/or Platinum (Pt).

### Claim 6 (depends on 1)

The memory structure of claim 1, wherein the memory stack further comprises a selector device disposed to the first side of the first electrode in the vertically stacked structures, the selector device located between the first electrode and the variable resistance material.

### Claim 7 (depends on 6)

The memory structure of claim 6, further comprising a second electrode disposed to the opposite side of the variable resistance material from the first electrode in the vertically stacked structures of the memory stack.

### Claim 8 (depends on 6)

The memory structure of claim 6, further comprising a second electrode disposed to the opposite side of the selector device from the first electrode in the vertically stacked structures of the memory stack.

### Claim 9 (depends on 6)

The memory structure of claim 6, further comprising:
a second electrode disposed to the opposite side of the variable resistance material from the first electrode in the vertically stacked structures of the memory stack, and
a third electrode between the selector device and the variable resistance material in the vertically stacked structures of the memory stack; and
wherein at least one of the second and third electrodes includes a respective sidewall surface doped with the adhesion species that intermixes with the material of the at least one of the second and third electrodes.

### Claim 10 (depends on 9)

The memory structure of claim 9, wherein at least one of the first, second, and third electrodes comprises carbon, and wherein the at least one electrode of the first, second, and third electrodes comprising carbon includes a respective sidewall surface doped with the adhesion species that interacts with the carbon of the electrode.

### Claim 11 (depends on 1)

The memory device of claim 1, wherein the first electrode is conductively coupled to a word line.

### Claim 12

A memory structure, comprising:
multiple memory stacks, the memory stacks defined by respective sidewalls, and having vertically stacked structures, including,
a first electrode comprising carbon, and
a variable resistance material on a first side of the first electrode;
wherein at least the first electrode has a sidewall surface doped with an adhesion species that intermixes with the carbon of the first electrode, and
a film comprising the material of the adhesion species formed over at least one sidewall of the memory stack.

### Claim 13 (depends on 12)

The memory device of claim 12, wherein the adhesion species comprises boron.

### Claim 14 (depends on 12)

The memory device of claim 12, further comprising a dielectric material implanted into the adhesion species film; and wherein the implanted dielectric material forms a liner on a sidewall of the memory stack.

### Claim 15 (depends on 14)

The memory device of claim 14, wherein the adhesion species comprises boron and wherein the implanted dielectric material liner comprises boron and nitride (BNX).

### Claim 16 (depends on 14)

The memory device of claim 14, further comprising selector device material within the memory stacks, wherein the selector device material comprises one or more of Selenium (Se), Arsenic (As), Germanium (Ge), Tin (Sn), Tellurium (Te), Silicon (Si), Lead (Pb), Carbon (C), and/or Bismuth (Bi).

### Claim 17 (depends on 12)

The memory device of claim 12, further comprising a dielectric fill material between adjacent memory stacks.

### Claim 18 (depends on 14)

The memory device of claim 14, further comprising a second electrode disposed to the opposite side of the variable resistance material from the first electrode.

### Claim 19 (depends on 16)

The memory device of claim 16, wherein the selector device material is located between the first electrode and the variable resistance material in respective memory stacks.

### Claim 20 (depends on 19)

The memory device of claim 19, further comprising:
a second electrode disposed to the opposite side of the variable resistance material from the first electrode in the vertically stacked structures of the memory stack, and
a third electrode between the selector device and the variable resistance material in the vertically stacked structures of the memory stack; and
wherein at least one of the second and third electrodes comprises carbon and includes a respective sidewall surface doped with the adhesion species that interacts with the carbon of the electrode.