# US 2019/0355883 A1 · Led light source, led light source manufacturing method, and direct display device thereof

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- Number: US 2019/0355883 A1
- Document ID: US20190355883A1
- Status: Published application
- Kind: A1
- Application number: 16/510,995
- Filed: 2019-07-15
- Published: 2019-11-21
- Earliest claimed: 2018-05-15
- Assignees: Unity Opto Technology Co., Ltd.
- Applicants: Unity Opto Technology Co., Ltd.
- Inventors: HUNG-LI YEH; WEI-CHUNG LIN; KO-WEI LU
- Web page: https://patentgrep.com/patent/US20190355883A1

## CPC

- H10H 20/853: characterised by their shape
- H10H 20/856: Reflecting means
- G09G 3/2003: {Display of colours (specific for liquid crystal displays G09G3/3607)}
- G09G 3/32: semiconductive, e.g. using light-emitting diodes [LED]
- H10H 20/8506: {Containers}
- H10H 20/851: Wavelength conversion means
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- G09G 3/3426: {the different display panel areas being distributed in two dimensions, e.g. matrix}
- G09G 2320/0233: Improving the luminance or brightness uniformity across the screen
- H10H 20/8513: {having two or more wavelength conversion materials}
- H10W 90/00: Package configurations
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.

## Claims

### Claim 1

An LED light source manufacturing method, comprising the steps of:
providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
forming a reflective layer on the inner mounting surface;
providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst; and
dispensing a protection structure to the base and covering the encapsulation structure; wherein the encapsulation structure has a hardness lower than a hardness of the protection structure.

### Claim 2 (depends on 1)

The LED light source manufacturing method of claim 1, wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO2, BN, Al2O3, and TiO2 or a combination thereof.

### Claim 3 (depends on 2)

The LED light source manufacturing method of claim 2, wherein the uniform light particle relative to the protection structure has a weight percentage concentration falling within a range of 5%-15%.

### Claim 4 (depends on 3)

The LED light source manufacturing method of claim 3, wherein the protection structure is made of a material selected from organic silicone.

### Claim 5 (depends on 4)

The LED light source manufacturing method of claim 4, wherein the encapsulation structure has a hardness preferably falling within a range of D40-D60 when the LED chip is installed at a bottom position of the inner mounting surface by a flip chip method.

### Claim 6 (depends on 5)

The LED light source manufacturing method of claim 5, wherein the protection structure has a hardness falling within a range of D60-D80.

### Claim 7 (depends on 6)

The LED light source manufacturing method of claim 6, wherein when the anti-vulcanization solvent is heated and volatilized, the heating temperature is lower than 150° C.

### Claim 8 (depends on 7)

The LED light source manufacturing method of claim 7, wherein the base is made of a transparent material.

### Claim 9 (depends on 8)

The LED light source manufacturing method of claim 8, wherein the protection structure is installed at the upper edge of the base by a dispensing method, and the protection structure has an area greater than an area of the light emitting region.

### Claim 10 (depends on 9)

The LED light source manufacturing method of claim 9, wherein the upper edge of the base is formed into a stepped shape.

### Claim 11 (depends on 4)

The LED light source manufacturing method of claim 4, wherein the encapsulation structure has a hardness preferably falling within a range of D20-D40 when the LED chip is installed at a bottom position of the inner mounting surface by a solid crystallization of the metal wire bonds.

### Claim 12 (depends on 11)

The LED light source manufacturing method of claim 11, wherein the protection structure has a hardness falling within a range of D60-D80.

### Claim 13 (depends on 12)

The LED light source manufacturing method of claim 12, wherein the anti-vulcanization structure has a thickness falling within a range of 2-10 μm.

### Claim 14 (depends on 13)

The LED light source manufacturing method of claim 13, wherein when the anti-vulcanization solvent is heated and volatilized, the heating temperature is lower than 150° C.

### Claim 15 (depends on 14)

The LED light source manufacturing method of claim 14, wherein the base is made of a transparent material.

### Claim 16 (depends on 15)

The LED light source manufacturing method of claim 15, wherein the protection structure is installed at the upper edge of the base by a dispensing method, and the protection structure has an area greater than an area of the light emitting region.

### Claim 17 (depends on 16)

The LED light source manufacturing method of claim 16, wherein the upper edge of the base is formed into a stepped shape.

### Claim 18 (depends on 2)

The LED light source manufacturing method of claim 2, wherein the LED chip has a light emission wavelength falling within a range of 400-460 nm, and the light excitation structure includes a green fluorescent powder and a first red fluorescent powder, and the green fluorescent powder contains sulfur, and the first red fluorescent powder does not contain sulfur; the first red fluorescent powder is selected from the group consisting of T2XF6:Mn4+, M2Si5N8:Eu2+, and CaAlSiN3:Eu2+; T is selected from the group consisting of Li, Na, K, and Rb, and X is selected from the group consisting of Ge, Si, Sn, Zr, and Ti; and M is selected from the group consisting of Ca, Sr, and Ba.

### Claim 19 (depends on 2)

The LED light source manufacturing method of claim 2, wherein the LED chip has a light emission wavelength falling within a range of 400-460 nm, and the light excitation structure comprises a green fluorescent powder and a second red fluorescent powder, and the green fluorescent powder contains sulfur, and the second red fluorescent powder also contains sulfur; and the second red fluorescent powder is selected from the group consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.

### Claim 20 (depends on 2)

The LED light source manufacturing method of claim 2, wherein the LED chip has a light emission wavelength falling within a range of 400-460 nm, and the light excitation structure comprises a green fluorescent powder, a first red fluorescent powder and a second red fluorescent powder, and the green fluorescent powder contains sulfur, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur; the first red fluorescent powder is selected from the group consisting of T2XF6:Mn4+, M2Si5N8:Eu2+, and CaAlSiN3:Eu2+; T is selected from the group consisting of Li, Na, K, and Rb, and X is selected from the group consisting of Ge, Si, Sn, Zr, and Ti; and M is selected from the group consisting of Ca, Sr, and Ba; and the second red fluorescent powder is selected from the grougfp consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.

### Claim 21 (depends on 2)

The LED light source manufacturing method of claim 2, wherein the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure includes a second red fluorescent powder, and the second red fluorescent powder contains sulfur; and the second red fluorescent powder is selected from the group consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.

### Claim 22 (depends on 2)

The LED light source manufacturing method of claim 2, wherein the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure comprises a first red fluorescent powder and a second red fluorescent powder, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur; and the first red fluorescent powder is selected from the group consisting of T2XF6:Mn4+, M2Si5N8:Eu2+, and CaAlSiN3:Eu2+; T is an element selected from the group consisting of Li, Na, K, and Rb; X is an element selected from the group consisting of Ge, Si, Sn, Zr and Ti; M is an element selected from the group consisting of Ca, Sr, and Ba; and the second red fluorescent powder is selected from the group consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.