# US 2019/0355873 A1 · Light-emitting display device and electronic device including the same

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- Number: US 2019/0355873 A1
- Document ID: US20190355873A1
- Status: Published application
- Kind: A1
- Application number: 16/531,204
- Filed: 2019-08-05
- Published: 2019-11-21
- Earliest claimed: 2009-10-09
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Ryo ARASAWA; Hideaki SHISHIDO
- Web page: https://patentgrep.com/patent/US20190355873A1

## CPC

- H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

## Claims

### Claim 1

(canceled)

### Claim 2

A light-emitting display device comprising:
a first wiring;
a first pixel comprising:
a first pixel electrode; and
a first transistor electrically connected to the first wiring; and
a second pixel adjacent to the first pixel, comprising:
a second pixel electrode; and
a second transistor, wherein:
the first transistor comprises an oxide semiconductor layer overlapping with the first wiring,
a length of the oxide semiconductor layer in a channel length direction of the first transistor is larger than a width of the first wiring in a region where the oxide semiconductor layer and the first wiring overlap with each other, and
the oxide semiconductor layer overlaps with the second pixel electrode, and does not overlap with the first pixel electrode.

### Claim 3 (depends on 2)

The light-emitting display device according to claim 2, wherein the first wiring functions as a scan line.

### Claim 4 (depends on 2)

The light-emitting display device according to claim 2, wherein the oxide semiconductor layer is over the first wiring with a gate insulating film therebetween.

### Claim 5 (depends on 2)

The light-emitting display device according to claim 2, wherein the oxide semiconductor layer contains indium, gallium, and zinc.

### Claim 6 (depends on 2)

The light-emitting display device according to claim 2, wherein the oxide semiconductor layer has a light-transmitting property.

### Claim 7 (depends on 2)

The light-emitting display device according to claim 2, wherein the first wiring contains copper.

### Claim 8 (depends on 2)

The light-emitting display device according to claim 2, wherein the first wiring does not comprise a branched wiring.

### Claim 9

A light-emitting display device comprising:
a first wiring;
a second wiring;
a first pixel comprising:
a first pixel electrode;
a first transistor electrically connected to the first wiring; and
a first capacitor electrically connected to the second wiring; and
a second pixel adjacent to the first pixel, comprising:
a second pixel electrode;
a second transistor; and
a second capacitor, wherein:
the first transistor comprises an oxide semiconductor layer overlapping with the first wiring,
a length of the oxide semiconductor layer in a channel length direction of the first transistor is larger than a width of the first wiring in a region where the oxide semiconductor layer and the first wiring overlap with each other,
the oxide semiconductor layer overlaps with the second pixel electrode, and does not overlap with the first pixel electrode, and
the second wiring comprises a region overlapping with the first wiring.

### Claim 10 (depends on 9)

The light-emitting display device according to claim 9, wherein the first wiring functions as a scan line.

### Claim 11 (depends on 9)

The light-emitting display device according to claim 9, wherein the second wiring functions as a power supply line.

### Claim 12 (depends on 9)

The light-emitting display device according to claim 9, wherein the oxide semiconductor layer is over the first wiring with a gate insulating film therebetween.

### Claim 13 (depends on 9)

The light-emitting display device according to claim 9, wherein the oxide semiconductor layer contains indium, gallium, and zinc.

### Claim 14 (depends on 9)

The light-emitting display device according to claim 9, wherein the oxide semiconductor layer has a light-transmitting property.

### Claim 15 (depends on 9)

The light-emitting display device according to claim 9, wherein the first wiring contains copper.

### Claim 16 (depends on 9)

The light-emitting display device according to claim 9, wherein the second wiring contains titanium and molybdenum.

### Claim 17 (depends on 9)

The light-emitting display device according to claim 9, wherein the first wiring does not comprise a branched wiring.