# US 2019/0355804 A1 · Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

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- Number: US 2019/0355804 A1
- Document ID: US20190355804A1
- Status: Published application
- Kind: A1
- Application number: 16/400,475
- Filed: 2019-05-01
- Published: 2019-11-21
- Earliest claimed: 2018-05-18
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: YOUNG-LIM PARK; SUN-MIN MOON; CHANG-HWA JUNG; YOUNG-GEUN PARK; JONG-BOM SEO; KYU-HO CHO
- Web page: https://patentgrep.com/patent/US20190355804A1

## CPC

- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- C23C 16/0281: {of metallic sub-layers (C23C16/029 takes precedence)}
- C23C 16/405: {of refractory metals or yttrium}
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers}
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 28/322: {only coatings of metal elements only}
- C23C 28/345: {with at least one oxide layer}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

## Claims

### Claim 1

An integrated circuit device, comprising:
an electrode;
a dielectric layer facing the electrode; and
a plurality of interface layers interposed between the electrode and the dielectric layer and comprising a first metal,
wherein the plurality of interface layers comprises a first interface layer and a second interface layer, and an oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

### Claim 2 (depends on 1)

The integrated circuit device of claim 1, wherein
each of the first interface layer and the second interface layer comprises an oxide of the first metal,
the first interface layer is disposed closer to the dielectric layer than the second interface layer, and
the oxygen content of the first interface layer is greater than the oxygen content of the second interface layer.

### Claim 3 (depends on 1)

The integrated circuit device of claim 1, wherein
the second interface layer is spaced apart from the dielectric layer,
the first interface layer is interposed between the second interface layer and the dielectric layer, and
the oxygen content of the second interface layer is less than the oxygen content of the first interface layer.

### Claim 4 (depends on 1)

The integrated circuit device of claim 1, wherein
the first interface layer is in contact with the dielectric layer and comprises an oxide of the first metal, and
the second interface layer is in contact with the electrode and comprises the first metal.

### Claim 5 (depends on 1)

The integrated circuit device of claim 1, wherein the electrode comprises the first metal, a nitride of the first metal, an oxide of the first metal, or a combination of the first metal, the nitride of the first metal, and the oxide of the first metal.

### Claim 6 (depends on 1)

The integrated circuit device of claim 1, wherein the electrode comprises a nitride of a second metal that is different from the first metal.

### Claim 7 (depends on 1)

The integrated circuit device of claim 1, wherein
the dielectric layer comprises a second metal that is different from the first metal, and
an electronegativity of the first metal is greater than an electronegativity of the second metal.

### Claim 8 (depends on 1)

The integrated circuit device of claim 1, wherein the first metal is selected from Mo, Nb, Sn, Ta, Ti, In, Ni, Co, W, and Ru.

### Claim 9 (depends on 1)

The integrated circuit device of claim 1, wherein the first interface layer and the second interface layer comprise different materials from each other and are selected from Mo, MoO2, and MoO3, respectively.

### Claim 10 (depends on 1)

The integrated circuit device of claim 1, wherein the first interface layer and the second interface layer comprise different materials from each other and are selected from Nb, NbO, NbO2, and Nb2O5, respectively.

### Claim 11

An integrated circuit device, comprising:
a lower electrode and an upper electrode facing each other;
a dielectric layer interposed between the lower electrode and the upper electrode;
a lower interface layer interposed between the lower electrode and the dielectric layer and comprising a first metal; and
an upper interface layer interposed between the dielectric layer and the upper electrode and comprising the first metal,
wherein each of the lower interface layer and the upper interface layer comprises a plurality of interface layers having different oxygen contents.

### Claim 12 (depends on 11)

The integrated circuit device of claim 11, wherein at least one of the lower interface layer and the upper interface layer comprises:
an inner interface layer that is in contact with the dielectric layer and has a first oxygen content; and
an outer interface layer spaced apart from the dielectric layer,
wherein the inner interface layer is interposed between the outer interface layer and the dielectric layer, and the inner interface layer has a second oxygen content that is less than the first oxygen content.

### Claim 13 (depends on 12)

The integrated circuit device of claim 12, wherein the outer interface layer comprises a conductive layer.

### Claim 14 (depends on 11)

The integrated circuit device of claim 11, wherein at least one of the lower interface layer and the upper interface layer comprises:
an inner interface layer that is in contact with the dielectric layer and comprises an oxide MxOy of the first metal, wherein M is the first metal, x is equal to 1 or 2, y is an integer, and 1≤y≤5; and
an outer interface layer spaced apart from the dielectric layer,
wherein the inner interface layer is interposed between the outer interface layer and the dielectric layer, the outer interface layer comprises an oxide MqOr of the first metal having a smaller oxygen content than an oxygen content of the inner interface layer, M is the first metal, q is equal to 1, and r is equal to 1 or 2.

### Claim 15 (depends on 11)

The integrated circuit device of claim 11, wherein
the dielectric layer comprises a second metal that is different from the first metal, and
an electronegativity of the first metal is greater than an electronegativity of the second metal.

### Claim 16 (depends on 11)

The integrated circuit device of claim 11, wherein at least one of the lower electrode and the tipper electrode comprises the first metal, a nitride of the first metal, an oxide of the first metal, or a combination of the first metal, the nitride of the first metal, and the oxide of the first metal.

### Claim 17 (depends on 11)

The integrated circuit device of claim 11, wherein the plurality of interface layers comprises:
an inner interface layer comprising MoO2, MoO3, or a combination of MoO2 and MoO3; and
an outer interface layer comprising Mo, MoO2, or a combination of Mo and MoO2,
wherein an oxygen content of the outer interface layer is less than an oxygen content of the inner interface layer.

### Claim 18 (depends on 11)

The integrated circuit device of claim 11, wherein the plurality of interface layers comprises:
an inner interface layer comprising NbO, NbO2, Nb2O5, or a combination of NbO, NbO2 and Nb2O5; and
an outer interface layer comprising Nb, NbO, NbO2, or a combination of Nb, NbO and NbO2,
wherein an oxygen content of the outer interface layer is less than an oxygen content of the inner interface layer.

### Claim 19

An integrated circuit device, comprising:
a dielectric layer formed on a substrate;
a plurality of interface layers formed on the dielectric layer and comprising a first interface layer and a second interface layer having different oxygen contents; and
an electrode formed on the plurality of interface layers.

### Claim 20 (depends on 19)

The integrated circuit device of claim 19, wherein the plurality of interface layers comprises:
a first interface layer comprising an oxide MxOy of a first metal,
wherein M is the first metal, x is equal to 1 or 2, y is an integer, and 1≤y≤5; and
a second interface layer spaced apart from the dielectric layer,
wherein
the first interface layer is interposed between the second interface layer and the dielectric layer and comprises an oxide MqOr of the first metal having a smaller oxygen content than an oxygen content of the first interface layer, M is the first metal, q is equal to 1, and r is equal to 1 or 2, and
an electronegativity of the dielectric layer is less than an electronegativity of the first metal.

### Claim at position 21

21-40. (canceled)