# US 2019/0355803 A1 · Methods Of Forming A Capacitor Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resistances

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- Number: US 2019/0355803 A1
- Document ID: US20190355803A1
- Status: Published application
- Kind: A1
- Application number: 16/527,301
- Filed: 2019-07-31
- Published: 2019-11-21
- Earliest claimed: 2017-01-12
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Muralikrishnan Balakrishnan; Beth R. Cook; Durai Vishak Nirmal Ramaswamy
- Web page: https://patentgrep.com/patent/US20190355803A1

## CPC

- H10D 1/694: {comprising noble metals or noble metal oxides}
- H10B 53/30: characterised by the memory core region
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H10D 1/716: {having vertical extensions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A memory cell comprises a capacitor having a first conductive capacitor electrode having laterally-spaced walls that individually have a top surface. A second conductive capacitor electrode is laterally between the walls of the first capacitor electrode, and comprises a portion above the first capacitor electrode. Ferroelectric material is laterally between the walls of the first capacitor electrode and laterally between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the ferroelectric material. A parallel current leakage path is between an elevationally-inner surface of the portion of the second capacitor electrode that is above the first capacitor electrode and at least one of the individual top surfaces of the laterally-spaced walls of the first capacitor electrode. The parallel current leakage path is circuit-parallel the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path. Other aspects, including methods, are disclosed.

## Claims

### Claim at position 1

1-29. (canceled)

### Claim 30

A method of forming a capacitor, comprising:
forming a conductive lining in a capacitor opening in insulative-comprising material to comprise a first capacitor electrode of a capacitor being formed in the capacitor opening, the conductive lining having an uppermost surface within the capacitor opening that is below an uppermost surface of the insulative-comprising material immediately laterally adjacent the capacitor opening;
forming a current leakage lining atop the conductive lining within the capacitor opening;
forming ferroelectric material aside the conductive lining and the current leakage lining in the capacitor opening, the ferroelectric material comprising capacitor insulator material of the capacitor;
forming conductive material in the capacitor opening to comprise a second capacitor electrode of the capacitor; and
the capacitor comprising an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the ferroelectric material, the current leakage lining forming a parallel current leakage path that is circuit-parallel the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path.

### Claim 31 (depends on 30)

The method of claim 30 comprising forming the current leakage lining directly against the conductive lining.

### Claim 32 (depends on 30)

The method of claim 30 comprising forming the conductive lining to comprise a bottom extending laterally to and between laterally-spaced walls of the lining.

### Claim 33 (depends on 30)

The method of claim 30 comprising elevationally recessing the conductive lining in the capacitor opening relative to the uppermost surface of the insulative-comprising material immediately laterally adjacent the capacitor opening before forming the current leakage lining.

### Claim 34 (depends on 30)

The method of claim 30 comprising:
forming material of the conductive of lining to extending outwardly of the capacitor opening and over an uppermost surface of the insulative-comprising material;
removing the material of the conductive of lining that is extending over an uppermost surface of the insulative-comprising material back at least to the uppermost surface of the insulative-comprising material; and
elevationally recessing the conductive lining in the capacitor opening relative to the uppermost surface of the insulative-comprising material before forming the current leakage lining.

### Claim 35 (depends on 30)

The method of claim 30 comprising forming the ferroelectric material directly against the current leakage lining in the capacitor opening.

### Claim 36 (depends on 30)

The method of claim 30 comprising forming the parallel current leakage path to have a dominant band gap of 0.4 eV to 5.0 eV and that is less than dominant band gap of the ferroelectric material.

### Claim 37 (depends on 30)

The method of claim 30 comprising forming the parallel current leakage path to comprise a non-linear resistor between the first and second capacitor electrodes exhibiting higher resistance at higher voltages than at lower voltages.

### Claim 38 (depends on 30)

The method of claim 30 comprising forming the ferroelectric material to have its dominant band gap be equal to or less than that of the parallel current leakage path.

### Claim 39 (depends on 30)

The method of claim 30 comprising forming the parallel current leakage path to predominantly comprise one or more of amorphous silicon, polycrystalline silicon, and germanium.

### Claim 40 (depends on 30)

The method of claim 30 comprising forming the parallel current leakage path to predominantly comprise one or more chalcogenides.

### Claim 41 (depends on 30)

The method of claim 30 comprising forming the parallel current leakage path to predominantly comprise one or more of silicon-rich silicon nitride, silicon-rich silicon oxide, and intrinsically dielectric material doped with conductivity increasing dopants.

### Claim 42 (depends on 30)

The method of claim 30 wherein forming the current leakage lining comprises PVD that forms material of the current leakage lining in an uppermost portion of the capacitor opening and not in a lowest portion of the capacitor opening.

### Claim 43

A method of forming a capacitor, comprising:
forming a conductive lining in a capacitor opening in insulative-comprising material to comprise a first capacitor electrode of a capacitor being formed in the capacitor opening, material of the conductive lining extending outwardly of the capacitor opening and over an uppermost surface of the insulative-comprising material;
plugging the capacitor opening with the conductive lining therein with photoresist;
removing the photoresist and the material of the conductive lining extending outwardly of the capacitor opening over an uppermost surface of the insulative-comprising material back at least to the uppermost surface of the insulative-comprising material;
devotionally recessing the conductive lining in the capacitor opening relative to the uppermost surface of the insulative-comprising material;
removing all remaining of the photoresist from the capacitor opening;
after removing the photoresist, forming a current leakage lining atop the recessed conductive lining within the capacitor opening, material of the current leakage lining extending outwardly of the capacitor opening and over the uppermost surface of the insulative-comprising material;
forming ferroelectric material aside the conductive lining and the current leakage lining in the capacitor opening, the ferroelectric material extending outwardly of the capacitor opening and over an uppermost surface of the material of the current leakage lining laterally outward of the capacitor opening, the ferroelectric material comprising capacitor insulator material of the capacitor;
forming conductive material in the capacitor opening, the conductive material extending laterally outwardly of the capacitor opening over an uppermost surface of the ferroelectric material laterally outward of the capacitor opening, the conductive material comprising a second capacitor electrode of the capacitor;
removing the material of the current leakage lining, the ferroelectric material, and the conductive material that are laterally outward of the capacitor opening back at least to the elevationally outermost surface of the insulative-comprising material; and
the capacitor comprising an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the ferroelectric material, the current leakage lining forming a parallel current leakage path that is circuit-parallel the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path.