# US 2019/0355784 A1 · Pixel architectures for low power micro light-emitting diode displays > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0355784 A1 - Document ID: US20190355784A1 - Status: Published application - Kind: A1 - Application number: 15/985,571 - Filed: 2018-05-21 - Published: 2019-11-21 - Earliest claimed: 2018-05-21 - Assignees: Intel Corporation - Applicants: Intel Corporation - Inventors: Khaled AHMED - Web page: https://patentgrep.com/patent/US20190355784A1 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - H10H 20/833: Transparent materials - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Pixel architectures for low power micro light-emitting diode displays are described. In an example, a micro light emitting diode pixel structure includes a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon. A plurality of micro light emitting diode devices is in a second dielectric layer above the first dielectric layer, individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures. The plurality of micro light emitting diode devices includes an orange micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device. A transparent conducting oxide layer is disposed on the plurality of micro light emitting diode devices and on the second dielectric layer. ## Claims ### Claim 1 A micro light emitting diode pixel structure, comprising: a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon; a plurality of micro light emitting diode devices in a second dielectric layer above the first dielectric layer, individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures, wherein the plurality of micro light emitting diode devices comprises an orange micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device; and a transparent conducting oxide layer disposed on the plurality of micro light emitting diode devices and on the second dielectric layer. ### Claim 2 (depends on 1) The micro light emitting diode pixel structure of claim 1, wherein the plurality of micro light emitting diode devices comprises only a single orange micro light emitting diode device, only a single green micro light emitting diode device, and only a single blue micro light emitting diode device. ### Claim 3 (depends on 1) The micro light emitting diode pixel structure of claim 1, wherein the plurality of micro light emitting diode devices further comprises a red micro light emitting diode device. ### Claim 4 (depends on 3) The micro light emitting diode pixel structure of claim 3, wherein the plurality of micro light emitting diode devices comprises only a single orange micro light emitting diode device, only a single green micro light emitting diode device, only a single blue micro light emitting diode device, and only a single red micro light emitting diode device. ### Claim 5 (depends on 1) The micro light emitting diode pixel structure of claim 1, wherein the substrate is a silicon substrate comprising metal oxide semiconductor (CMOS) devices or thin film transistor (TFT) devices coupled to the plurality of conductive interconnect structures. ### Claim 6 (depends on 1) The micro light emitting diode pixel structure of claim 1, wherein the second dielectric layer is separate and distinct from the first dielectric layer. ### Claim 7 (depends on 6) The micro light emitting diode pixel structure of claim 6, wherein the first and second dielectric layers are low-k dielectric layers. ### Claim 8 (depends on 1) The micro light emitting diode pixel structure of claim 1, wherein the transparent conducting oxide layer is an indium tin oxide (ITO) layer. ### Claim 9 (depends on 1) The micro light emitting diode pixel structure of claim 1, wherein the plurality of micro light emitting diode devices is a plurality of nanowire-based micro light emitting diode devices. ### Claim 10 (depends on 9) The micro light emitting diode pixel structure of claim 9, wherein the plurality of nanowire-based LED pixel elements comprises GaN nanowires. ### Claim 11 A method of fabricating a micro light emitting diode pixel structure, the method comprising: providing a first wafer having a plurality of conductive interconnect structures in a first dielectric layer thereon; providing a second wafer having a plurality of micro light emitting diode devices in a second dielectric thereon, wherein the plurality of micro light emitting diode devices comprises an orange micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device; coupling the first and second wafers to provide individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures; removing the second wafer; and forming a transparent conducting oxide layer on the plurality of micro light emitting diode devices and on the second dielectric layer. ### Claim 12 (depends on 11) The method of claim 11, wherein the first wafer is a silicon substrate comprising metal oxide semiconductor (CMOS) devices or thin film transistor (TFT) devices coupled to the plurality of conductive interconnect structures. ### Claim 13 (depends on 11) The method of claim 11, wherein the plurality of micro light emitting diode devices comprises only a single orange micro light emitting diode device, only a single green micro light emitting diode device, and only a single blue micro light emitting diode device. ### Claim 14 (depends on 11) The method of claim 11, wherein the plurality of micro light emitting diode devices further comprises a red micro light emitting diode device. ### Claim 15 (depends on 14) The method of claim 14, wherein the plurality of micro light emitting diode devices comprises only a single orange micro light emitting diode device, only a single green micro light emitting diode device, only a single blue micro light emitting diode device, and only a single red micro light emitting diode device. ### Claim 16 (depends on 11) The method of claim 11, wherein the second dielectric layer is separate and distinct from the first dielectric layer. ### Claim 17 (depends on 16) The method of claim 16, wherein the first and second dielectric layers are low-k dielectric layers. ### Claim 18 (depends on 11) The method of claim 11, wherein the transparent conducting oxide layer is an indium tin oxide (ITO) layer. ### Claim 19 (depends on 11) The method of claim 11, wherein the plurality of micro light emitting diode devices is a plurality of nanowire-based micro light emitting diode devices. ### Claim 20 (depends on 19) The method of claim 19, wherein the plurality of nanowire-based LED pixel elements comprises GaN nanowires. ### Claim 21 A pixel element for a micro-light emitting diode (LED) display panel, the pixel element comprising: a blue color nanowire or nanopyramid LED above a nucleation layer above a substrate, the blue color nanowire LED comprising a first GaN core; a green color nanowire or nanopyramid LED above the nucleation layer above the substrate, the green color nanowire LED comprising a second GaN core; and an orange color nanowire or nanopyramid LED above the nucleation layer above the substrate, the orange color nanowire or nanopyramid LED comprising a third GaN core. ### Claim 22 (depends on 21) The pixel element of claim 21, wherein the blue color nanowire further comprises a first InGaN active layer on the first GaN core, the green color nanowire further comprises a second InGaN active layer on the second GaN core, and the orange color nanowire or nanopyramid further comprises a third InGaN active layer on the third GaN core. ### Claim 23 (depends on 22) The pixel element of claim 22, wherein the first InGaN active layer comprises less In than the second InGaN active layer, and the second InGaN active layer comprises less In than the third InGaN active layer. ### Claim 24 (depends on 22) The pixel element of claim 22, wherein the first InGaN active layer comprises In0.2Ga0.8N, the second InGaN active layer comprises In0.3Ga0.7N, and the third InGaN active layer comprises In0.35Ga0.65N. ### Claim 25 (depends on 22) The pixel element of claim 22, wherein the blue color nanowire further comprises a first p-type GaN cladding layer on the first InGaN active layer, the green color nanowire further comprises a second p-type GaN cladding layer on the second InGaN active layer, and the orange color nanowire further comprises a third p-type GaN cladding layer on the third InGaN active layer.