# US 2019/0355779 A1 · Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0355779 A1 - Document ID: US20190355779A1 - Status: Published application - Kind: A1 - Application number: 16/528,473 - Filed: 2019-07-31 - Published: 2019-11-21 - Earliest claimed: 2009-03-24 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Swarnal Borthakur; Marc Sulfridge - Web page: https://patentgrep.com/patent/US20190355779A1 ## CPC - H10F 39/024: {of coatings or optical elements} - H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12} - H10F 39/018: {of hybrid image sensors} - H10F 39/804: {Containers or encapsulations} - H10F 77/334: {for shielding light, e.g. light blocking layers or cold shields for infrared detectors} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 70/65: Shapes or dispositions of interconnections - H10W 72/242: {relative to the surface, e.g. recessed, protruding} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/922: {Bond pads being integral with underlying chip-level interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer. ## Claims ### Claim 1 A method of manufacturing a microelectronic imager having a substrate, an imager sensor located at a first side of the substrate, integrated circuitry coupled to the image sensor, a redistribution structure, and a bond-pad at the first side of the substrate, the redistributon structure having (a) a through-substrate interconnect between the first side and a second side of the substrate and (b) a trace over the second side of the substrate, the method comprising: placing a first material on the trace of the redistribution structure at the second side of the substrate, the first material including a substantially non-photoreactive radiation blocking material; disposing a second material on the first material placed on the trace, the second material including a photoreactive material; forming an aperture in the second material, the aperture being generally in alignment with a portion of the trace; and removing a portion of the first material through the aperture to expose the portion of the trace. ### Claim 2 (depends on 1) The method of claim 1 wherein: the first material is a first preformed sheet and the second material is a second preformed sheet laminated to the first preformed sheet, the first and second preformed sheets forming a laminated bi-layer structure before placing the first material over the trace; placing the first material over the trace comprises: placing the laminated bi-layer structure on the redistribution structure under a vacuum with the first preformed sheet below the second preformed sheet; releasing the vacuum to conform the laminated bi-layer structure to the topography of the redistribution structure; and forming the aperture in the second material comprises exposing the second preformed sheet to a pattern of radiation energy and developing the second preformed sheet to form the aperture in the second preformed sheet. ### Claim 3 (depends on 1) The method of claim 1 wherein the first material comprises a first preformed sheet of a carbon black material and the second material comprises a second preformed sheet of a dry resist, and wherein the method further comprises laminating the first and second preformed sheets together before disposing the first material over the trace. ### Claim 4 (depends on 1) The method of claim 1 wherein placing the first material over the trace comprises depositing a conformal layer of IR blocking material over the second side of the substrate. ### Claim 5 (depends on 1) The method of claim 1 wherein: the first material is a first preformed sheet of an IR blocking material; placing the first material over the trace comprises: placing the preformed sheet of IR blocking material on the redistribution structure under a vacuum; releasing the vacuum with the preformed sheet of IR blocking material placed on the redistribution structure; drawing a portion of the preformed sheet of IR blocking material into at least the through-substrate interconnect; and conforming the preformed sheet of IR blocking material to the topography of the redistribution structure; the second material includes a liquid photoresist; disposing the second material includes disposing the liquid photoresist onto the first material via a spin-on process; forming the aperture in the second material comprises exposing the second material to a pattern of radiation energy and developing the second material to form the aperture in the second material; and removing the portion of the first material includes: drying etching the first material through the aperture and the second material on the first material; and selecting a thickness of at least one of the first and second materials such that a target thickness of both the first and second material remain on the second side of the substrate after the portion of the trace is exposed.