# US 2019/0355758 A1 · Flexible display panel

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- Number: US 2019/0355758 A1
- Document ID: US20190355758A1
- Status: Published application
- Kind: A1
- Application number: 16/527,964
- Filed: 2019-07-31
- Published: 2019-11-21
- Earliest claimed: 2014-09-03
- Assignees: Samsung Display Co., Ltd.; Korea Advanced Institute of Science and Technology
- Applicants: Samsung Display Co., Ltd.; Korea Advanced Institute of Science and Technology
- Inventors: Jun Namkung; Seung Min Jane Han; Youbin Kim
- Web page: https://patentgrep.com/patent/US20190355758A1

## CPC

- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/8731: {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers}
- H10K 77/111: {Flexible substrates}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 Å, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 Å.

## Claims

### Claim 1

A flexible display panel comprising:
a base member including a bending area and a peripheral area adjacent to the bending area;
a barrier layer on the base member; and
a pixel on the barrier layer and including a thin film transistor and a display element connected to the thin film transistor,
wherein the barrier layer includes at least one first silicon nitride layer overlapped with the bending area, at least one first silicon oxide layer overlapped with the bending area, at least one second silicon nitride layer overlapped with the peripheral area, and at least one second silicon oxide layer overlapped with the at least one second silicon nitride layer, and
wherein a total thickness of the at least one second silicon nitride layer is greater than a total thickness of the at least one first silicon nitride layer.

### Claim 2 (depends on 1)

The flexible display panel of claim 1, wherein a second silicon nitride layer of the at least one second silicon nitride layer has a thickness greater than the total thickness of the at least one first silicon nitride layer.

### Claim 3 (depends on 2)

The flexible display panel of claim 2, wherein the total thickness of the at least one first silicon nitride layer is less than a total thickness of the at least one first silicon oxide layer.

### Claim 4 (depends on 1)

The flexible display panel of claim 1, wherein a total thickness of the at least one second silicon oxide layer is less than a total thickness of the at least one first silicon oxide layer.

### Claim 5 (depends on 4)

The flexible display panel of claim 4, wherein a second silicon oxide layer of the at least one second silicon oxide layer has a thickness less than the total thickness of the at least one first silicon oxide layer.

### Claim 6 (depends on 1)

The flexible display panel of claim 1, wherein the peripheral area and the bending area of the barrier layer have substantially an equal thickness.

### Claim 7 (depends on 1)

The flexible display panel of claim 1, further comprising a buffer layer on the barrier layer and contacting the thin film transistor.

### Claim 8 (depends on 7)

The flexible display panel of claim 7, wherein the buffer layer includes at least one third silicon nitride layer overlapped with the bending area, at least one third silicon oxide layer overlapped with the bending area, at least one fourth silicon nitride layer overlapped with the peripheral area, and at least one fourth silicon oxide layer overlapped with the at least one fourth silicon nitride layer, and
wherein a fourth silicon nitride layer of the at least one fourth silicon nitride layer has a thickness greater than a thickness of a third silicon nitride layer of the at least one third silicon nitride layer, and wherein a fourth silicon oxide of the at least one fourth silicon oxide layer has a thickness greater than a thickness of a third silicon oxide layer of the at least one third silicon oxide layer.

### Claim 9 (depends on 8)

The flexible display panel of claim 8, wherein the peripheral area and the bending area of the buffer layer have substantially an equal thickness.

### Claim 10 (depends on 9)

The flexible display panel of claim 9, wherein a total thickness of the at least one third silicon nitride layer is greater than a total thickness of the at least one third silicon oxide layer.

### Claim 11 (depends on 7)

The flexible display panel of claim 7, wherein at least one of the barrier layer and the buffer layer includes a hardness strengthening layer overlapped with the bending area.

### Claim 12 (depends on 1)

The flexible display panel of claim 1, further comprising a boundary area which is defined between the bending area and the peripheral area,
wherein the at least one first silicon nitride layer and the at least one first silicon oxide layer are spaced from the at least one second silicon nitride layer and the at least one second silicon oxide layer, respectively, with the boundary area located therebetween.

### Claim 13 (depends on 1)

The flexible display panel of claim 1, wherein a first silicon nitride layer of the at least one first silicon nitride layer has a thickness less than or equal to about 400 Å, and wherein a first silicon oxide layer of the at least one first silicon oxide layer has a thickness less than or equal to about 650 Å.

### Claim 14

A flexible display panel comprising:
a base member including a bending area and a peripheral area adjacent to the bending area;
a barrier layer on the base member; and
a pixel on the barrier layer and including a thin film transistor and a display element connected to the thin film transistor,
wherein the barrier layer includes at least one silicon nitride layer and at least one silicon oxide layer overlapped with the at least one silicon nitride layer,
wherein a total thickness of the at least one silicon nitride layer in the peripheral area is greater than a total thickness of the at least one silicon nitride layer in the bending area.

### Claim 15 (depends on 14)

The flexible display panel of claim 14, wherein a thickness of a silicon nitride layer of the at least one silicon nitride layer is less than a thickness of a silicon oxide layer of the at least one silicon oxide layer.