# US 2019/0355740 A1 · 3d semiconductor devices including a supporter and methods of forming the same

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- Number: US 2019/0355740 A1
- Document ID: US20190355740A1
- Status: Published application
- Kind: A1
- Application number: 16/192,232
- Filed: 2018-11-15
- Published: 2019-11-21
- Earliest claimed: 2018-05-21
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sang Jun Hong; Ee Jou Kim; Joong Shik Shin
- Web page: https://patentgrep.com/patent/US20190355740A1

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 41/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 41/41: of a memory region comprising a cell select transistor, e.g. NAND
- H10B 43/10: characterised by the top-view layout
- H10B 43/40: characterised by the peripheral circuit region
- H10D 30/693: {Vertical IGFETs having charge trapping gate insulators}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10B 41/10: characterised by the top-view layout
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.

## Claims

### Claim 1

A semiconductor device comprising:
a lower conductive layer on a substrate;
a conductive line on the lower conductive layer;
a buried trench in the conductive line;
a supporter on the conductive line and extending in the buried trench;
a stack structure comprising a plurality of insulating layers and a plurality of conductive layers that are alternately stacked on the supporter;
a channel structure that passes through the stack structure, the supporter, and the conductive line; and
an isolation trench that passes through the stack structure, the supporter, and the conductive line.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the supporter comprises:
a support plate on the conductive line; and
a support pattern in the buried trench and connected with the support plate.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein the isolation trench passes through the support pattern.

### Claim 4 (depends on 2)

The semiconductor device of claim 2, wherein the support pattern comprises a same material as the support plate.

### Claim 5 (depends on 2)

The semiconductor device of claim 2, wherein the support pattern and the support plate comprise polysilicon.

### Claim 6 (depends on 2)

The semiconductor device of claim 2, wherein a lower end of the support pattern is in direct contact with the lower conductive layer.

### Claim 7 (depends on 2)

The semiconductor device of claim 2, wherein the conductive line is in direct contact with the lower conductive layer and the support plate.

### Claim 8 (depends on 2)

The semiconductor device of claim 2, further comprising a lower mold layer between the support pattern and the lower conductive layer.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the channel structure comprises:
a core pattern;
a channel pattern on an outer side of the core pattern; and
an information storage pattern on an outer side of the channel pattern,
wherein the conductive line passes through the information storage pattern to be in direct contact with a side surface of the channel pattern.

### Claim 10

A semiconductor device comprising:
a substrate comprising a cell region and a pad region;
a lower conductive layer on the substrate;
a mold layer in the pad region on the lower conductive layer;
a conductive line in the cell region on the lower conductive layer and at a substantially same level as the mold layer;
a plurality of buried trenches in the conductive line and the mold layer;
a supporter on the conductive line and the mold layer and extending in the plurality of buried trenches;
a stack structure comprising a plurality of insulating layers and a plurality of conductive layers that are alternately stacked on the supporter;
a cell channel structure that passes through the stack structure, the supporter, and the conductive line;
a dummy channel structure that passes through the stack structure, the supporter, and the mold layer; and
a plurality of isolation trenches that pass through the stack structure, the supporter, and the conductive line.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the supporter comprises:
a support plate;
a support pattern in the plurality of buried trenches in the cell region and connected with the support plate; and
a support bar in the plurality of buried trenches in the pad region and connected with the support plate.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein at least one of the plurality of isolation trenches passes through the support pattern and the support bar.

### Claim 13

A semiconductor device comprising:
a substrate comprising a cell region and a pad region adjacent to the cell region;
a lower conductive layer on the substrate;
a mold layer in the pad region on the lower conductive layer;
a conductive line in the cell region on the lower conductive layer and at a substantially same level as the mold layer;
a first extension buried trench in the mold layer;
a second extension buried trench spaced apart from the first extension buried trench and in the mold layer;
a supporter on the conductive line and the mold layer and extending in the first extension buried trench and the second extension buried trench;
a stack structure comprising a plurality of insulating layers and a plurality of conductive layers that are alternately stacked on the supporter;
a plurality of cell channel structures that pass through the stack structure, the supporter, and the conductive line;
a plurality of dummy channel structures that pass through the stack structure, the supporter, and the mold layer between the first extension buried trench and the second extension buried trench; and
a plurality of isolation trenches that pass through the stack structure, the supporter, and the conductive line.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, wherein the supporter comprises:
a support plate on the conductive line and the mold layer;
a first extension support bar in the first extension buried trench and connected with the support plate; and
a second extension support bar in the second extension buried trench and connected with the support plate.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, further comprising:
a third extension buried trench in the mold layer between the first extension buried trench and the second extension buried trench; and
a third extension support bar in the third extension buried trench and connected with the support plate.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, further comprising:
a fourth extension buried trench in the mold layer between the first extension buried trench and the third extension buried trench;
a fourth extension support bar in the fourth extension buried trench and connected with the support plate;
a fifth extension buried trench in the mold layer between the second extension buried trench and the third extension buried trench; and
a fifth extension support bar in the fifth extension buried trench and connected with the support plate,
wherein the fourth extension buried trench and the fifth extension buried trench are adjacent to a boundary between the cell region and the pad region.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein:
the fourth extension buried trench is connected to the first extension buried trench and the third extension buried trench; and
the fifth extension buried trench is connected to the second extension buried trench and the third extension buried trench.

### Claim 18 (depends on 16)

The semiconductor device of claim 16, further comprising:
a sixth extension buried trench in the mold layer between the first extension buried trench and the third extension buried trench;
a sixth extension support bar in the sixth extension buried trench and connected with the support plate;
a seventh extension buried trench in the mold layer between the second extension buried trench and the third extension buried trench; and
a seventh extension support bar in the seventh extension buried trench and connected with the support plate,
wherein the sixth extension buried trench is opposite the fourth extension buried trench and the seventh extension buried trench is opposite the fifth extension buried trench.

### Claim 19 (depends on 18)

The semiconductor device of claim 18, wherein:
the sixth extension buried trench is connected to the first extension buried trench and the third extension buried trench; and
the seventh extension buried trench is connected to the second extension buried trench and the third extension buried trench.

### Claim 20 (depends on 15)

The semiconductor device of claim 15, further comprising:
a plurality of first cell buried trenches in the conductive line and aligned on an extension line of the first extension buried trench;
a plurality of first cell support patterns in the plurality of first cell buried trenches and connected with the support plate;
a plurality of second cell buried trenches in the conductive line and aligned on an extension line of the second extension buried trench; and
a plurality of second cell support patterns in the plurality of second cell buried trenches and connected with the support plate.

### Claim at position 21

-28. (canceled)