# US 2019/0355685 A1 · Method for fabricating the electronic component, and method for transposing a micro-element

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- Number: US 2019/0355685 A1
- Document ID: US20190355685A1
- Status: Published application
- Kind: A1
- Application number: 16/530,314
- Filed: 2019-08-02
- Published: 2019-11-21
- Earliest claimed: 2017-02-20
- Assignees: Au Optronics Corporation
- Applicants: AU Optronics Corporation
- Inventors: Yi-Cheng LIU; Ho-Cheng LEE; Chung-Chan LIU
- Web page: https://patentgrep.com/patent/US20190355685A1

## CPC

- H10D 86/40: characterised by multiple TFTs
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/0364: {of interconnections}
- H10W 72/019: {of bond pads}
- H10W 72/01953: {by etching}
- H10W 72/0198: {batch processes}
- H10W 72/0711: {Apparatus therefor}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07178: {Means for aligning}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/342: {relative to the surface, e.g. recessed, protruding}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/931: {Shapes of bond pads}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/00: Package configurations
- H10W 90/732: {between stacked chips}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An electronic component includes a circuit substrate, a connecting electrode, a micro-element, and a solder. The connecting electrode is located on the circuit substrate. The connecting electrode has a first transparent conductive layer. A surface of the first transparent conductive layer is located opposite the circuit substrate, and has a plurality of micrometers or nanometer particles. The micro-element is electrically connected to the connecting electrode. The solder is located between the connecting electrode and the micro-element, and fixes the micro-element on the connecting electrode.

## Claims

### Claim 1

A method for fabricating an electronic component, comprising:
providing a circuit substrate; and
forming a connecting electrode with a plurality of micro-protrusions on the circuit substrate, comprising:
forming a first transparent conductive film on the circuit substrate;
patterning the first transparent conductive film to form a first transparent conductive pattern;
performing subcritical annealing on the first transparent conductive pattern; and
etching the first transparent conductive pattern to form a first transparent conductive layer with the plurality of micrometers or nanometer particles.

### Claim 2 (depends on 1)

The method for fabricating an electronic component according to claim 1, further comprising:
forming a solder on the connecting electrode;
transposing a micro-element on the solder; and
fixing the micro-element by using the solder.

### Claim 3 (depends on 2)

The method for fabricating the electronic component according to claim 2, wherein the micro-protrusions are the micrometers or nanometer particles.

### Claim 4 (depends on 3)

The method for fabricating an electronic component according to claim 3, wherein the step of forming the connecting electrode on the circuit substrate further comprises:
forming a metal film on the circuit substrate; and
patterning the metal film to form a metal layer located between the circuit substrate and the first transparent conductive layer, wherein the micro-element is fixed on the first transparent conductive layer by using the solder, and a plurality of the micrometers or nanometer particles are embedded in the solder.

### Claim 5 (depends on 4)

The method for fabricating the electronic component according to claim 4, wherein the step of forming the connecting electrode on the circuit substrate further comprises:
forming a second transparent conductive film on the circuit substrate; and
patterning the second transparent conductive film to form a second transparent conductive layer located between the circuit substrate and the metal layer.

### Claim 6 (depends on 5)

The method for fabricating the electronic component according to claim 5, further comprising:
forming a protection film on the first transparent conductive layer and the circuit substrate; and
patterning the protection film to form a protection layer located on the first transparent conductive layer for covering the micrometers or nanometer particles, wherein a plurality of micro structures are formed on the protection layer, the solder is formed on the protection layer, the micro-protrusions are the micro structures, and a plurality of the micro structures are embedded in the solder.

### Claim 7 (depends on 2)

The method for fabricating the electronic component according to claim 2, after the step of forming the connecting electrode on the circuit substrate and the step of forming the first transparent conductive film on the circuit substrate, further comprising:
forming a metal film on the circuit substrate and the first transparent conductive layer; and
patterning the metal film to form a metal layer located on the first transparent conductive layer for covering the micrometers or nanometer particles, wherein a plurality of first protrusions are formed on the metal layer, the micro-protrusions are the first protrusions, and a plurality of the first protrusions are embedded in the solder.

### Claim 8 (depends on 2)

The method for fabricating the electronic component according to claim 2, after the step of forming the connecting electrode on the circuit substrate and the step of forming the first transparent conductive film on the circuit substrate, further comprising:
forming a metal film on the circuit substrate and the first transparent conductive layer;
patterning the metal film to form a metal layer located on the first transparent conductive layer for covering the micrometers or nanometer particles, wherein a plurality of first protrusions are formed on the metal layer;
forming a second transparent conductive film on the circuit substrate and the surface of the metal layer; and
patterning the second transparent conductive film to form a second transparent conductive layer located on the metal layer for covering the first protrusions, wherein a plurality of second protrusions are formed on the second transparent conductive layer, the solder is formed on the second transparent conductive layer, the micro-protrusions are the second protrusions, and a plurality of the second protrusions are embedded in the solder.

### Claim 9 (depends on 2)

The method for fabricating the electronic component according to claim 2, wherein the step of fixing the micro-element on the connecting electrode by using the solder comprises:
melting the solder to sink the solder between a plurality of the micro-protrusions; and
solidifying the solder, so that the micro-element is fixed on the connecting electrode by using the solder.

### Claim 10 (depends on 1)

The method for fabricating the electronic component according to claim 1, wherein in the step of performing subcritical annealing on the first transparent conductive pattern, an annealing temperature is between 150° C. and 180° C., and an annealing time is between 5 minutes and 120 minutes.

### Claim 11

A method for transposing at least one micro-element, comprising:
forming at least one solder on at least one connecting electrode, wherein each connecting electrode has a first transparent conductive layer and a plurality of micrometers or nanometer particles on the first transparent conductive layer;
lifting the at least one micro-element by using a transposing component, wherein the transposing component comprises an elastic suction head and a pump part, the elastic suction head has at least one projection separately lifting the at least one micro-element, the elastic suction head is coupled to the pump part, the pump part has at least one gas hole, the elastic suction head has at least one through hole connected to the at least one gas hole, and the through hole passes through one of the at least one projection via the surface of the elastic suction head to penetrate the other surface of the elastic suction head;
moving the at least one micro-element on the at least one solder by using the transposing component;
fixing the at least one micro-element on the at least one connecting electrode by using the at least one solder, wherein the plurality of the micrometers or nanometer particles of each connecting electrode are embedded in the solder;
driving the pump part to introduce a gas to the at least one through hole; and
separating the at least one micro-element from the elastic suction head while introducing the gas.

### Claim 12 (depends on 11)

The method for transposing the at least one micro-element according to claim 11, after the step of fixing the at least one micro-element on the at least one connecting electrode by using the at least one solder, further comprising:
melting the at least one solder, so that a plurality of the micrometers or nanometer particles are embedded in the solder; and
solidifying the at least one solder, so that the at least one micro-element is fixed on the at least one connecting electrode by using the at least one solder.

### Claim 13 (depends on 11)

The method for transposing the at least one micro-element according to claim 11, wherein the elastic suction head has adhesiveness.

### Claim 14 (depends on 11)

The method for transposing the at least one micro-element according to claim 11, wherein the elastic suction head is polydimethylsiloxane or moldable silicone.
