# US 2019/0355682 A1 · Integrated Circuit Structures And Methods Of Forming An Opening In A Material > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0355682 A1 - Document ID: US20190355682A1 - Status: Published application - Kind: A1 - Application number: 15/981,599 - Filed: 2018-05-16 - Published: 2019-11-21 - Earliest claimed: 2018-05-16 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Shigeru Sugioka; Kiyonori Oyu; Hiroshi Toyama; Jung Chul Park; Raj K. Bansal - Web page: https://patentgrep.com/patent/US20190355682A1 ## CPC - G03F 1/54: Absorbers, e.g. of opaque materials - H10W 20/082: {the openings being tapered via holes} - H10W 20/0633: {using subtractive patterning of the conductive members} - H10W 20/42: Vias, e.g. via plugs - H10W 20/063: {by forming conductive members before forming protective insulating material} - H10W 20/49: Adaptable interconnections, e.g. fuses or antifuses - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/652: Cross-sectional shapes - H10W 70/654: Top-view layouts - H10W 70/68: Shapes or dispositions thereof - H10W 72/90: Bond pads, in general - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In some embodiments, a method of forming an opening in a material comprises forming RIM over target material. Radiation is impinged onto the RIM through a masking tool over a continuous area of the RIM under which a target-material opening will be formed. The masking tool during the impinging allows more radiation there-through onto a mid-portion of the continuous area of the RIM in a vertical cross-section than onto laterally-opposing portions of the continuous area of the RIM that are laterally-outward of the mid-portion of the RIM in the vertical cross-section. After the impinging, the RIM is developed to form a RIM opening that has at least one pair of laterally-opposing ledges laterally-outward of the mid-portion of the RIM in the vertical cross-section elevationally between a top and a bottom of the RIM opening. The developed RIM is used as masking material while etching the target material through the RIM opening to form the target-material opening to have at least one pair of laterally-opposing ledges laterally-outward of a mid-portion in the target-material opening in the vertical cross-section elevationally between a top and a bottom of the target-material opening. Other aspects and constructions independent of manufacture are disclosed. ## Claims ### Claim 1 An integrated circuit structure comprising: an insulating material above integrated circuitry, the insulating material having an opening therein that extends elevationally inward to an upper conductive node of the integrated circuitry, the opening having at least one annular ledge elevationally between a top and a bottom of the opening; a conductive line of a redistribution layer (RDL) above the insulating material, the RDL conductive line extending elevationally inward into the opening over the at least one annular ledge and being directly electrically coupled to the upper conductive node; a first insulative material in the opening in the insulating material; and a second insulative material in the opening in the insulating material, the second insulative material being atop and directly against the first insulative material in the opening in the insulating material and being of different composition from that of the first insulative material. ### Claim 2 (depends on 1) The integrated circuit structure of claim 1 wherein the at least one annular ledge has an upper surface, at least a majority of the upper surface in a vertical cross-section radially through the at least one annular ledge being straight linear. ### Claim 3 (depends on 1) The integrated circuit structure of claim 1 wherein the at least one annular ledge has an upper surface, at least some portion of the upper surface in a vertical cross-section radially through the at least one annular ledge being horizontal or within 10° of horizontal. ### Claim 4 (depends on 3) The integrated circuit structure of claim 3 wherein at least some portion of the upper surface in the vertical cross-section is horizontal or within 5° of horizontal. ### Claim 5 (depends on 3) The integrated circuit structure of claim 3 wherein the portion is straight linear in the vertical cross-section. ### Claim 6 (depends on 1) The integrated circuit structure of claim 1 wherein at least a majority of sidewalls of the opening above and below the at least one annular ledge are straight linear and vertical or within 5° of vertical. ### Claim 7 (depends on 1) The integrated circuit structure of claim 1 wherein at least a majority of sidewalls of the opening above and below the at least one annular ledge are straight linear in a vertical cross-section radially through the at least one annular ledge and are more than 5° from vertical. ### Claim 8 (depends on 1) The integrated circuit structure of claim 1 wherein the at least one annular ledge has a radially-inner upper corner, an upper surface immediately-adjacent the radially-inner upper corner, and a side surface extending downwardly from said upper surface at the radially-inner upper corner all in a vertical cross-section radially through the at least one annular ledge; said upper surface and side surface immediately-adjacent the upper corner being straight linear in the vertical cross-section. ### Claim 9 (depends on 1) The integrated circuit structure of claim 1 wherein the at least one annular ledge has a radially-inner upper corner that is curved in a vertical cross-section radially through the at least one annular ledge. ### Claim 10 (depends on 1) The integrated circuit structure of claim 1 wherein the opening has more than one annular ledge elevationally between the top and the bottom of the opening. ### Claim 11 (depends on 1) The integrated circuit structure of claim 1 wherein the opening has only one annular ledge elevationally between the top and the bottom of the opening. ### Claim 12 (depends on 11) The integrated circuit structure of claim 11 wherein opening sidewalls above and below the one annular ledge have the same elevational lengths. ### Claim 13 (depends on 11) The integrated circuit structure of claim 11 wherein opening sidewalls above and below the one annular ledge have different elevational lengths. ### Claim 14 (depends on 13) The integrated circuit structure of claim 13 wherein the elevational length of the opening sidewall above the one annular ledge is less than the elevational length of the opening sidewall below the one annular ledge. ### Claim 15 (depends on 1) The integrated circuit structure of claim 1 wherein, conductive material of the RDL conductive line within the opening has opposed laterally-inner surfaces in a vertical cross-section radially through the at least one annular ledge, at least some portions of individual of said opposed laterally-inner surfaces being straight linear in the vertical cross-section; an upper surface of the insulating material in the vertical cross-section adjacent the opening being planar; and angles of the respective straight-linear portions from the planar upper surface are obtuse. ### Claim 16 An integrated circuit structure comprising: an insulating material above integrated circuitry, the insulating material having an opening therein that extends elevationally inward to an upper conductive node of the integrated circuitry, the opening having multiple annular ledges elevationally between a top and a bottom of the opening; a conductive line of a redistribution layer (RDL) above the insulating material, the RDL conductive line extending elevationally inward into the opening over the multiple annular ledges and being directly electrically coupled to the upper conductive node, all conductive material of the RDL conductive line that is in the opening less-than-filling the opening; a first insulative material in the opening in the insulating material; and a second insulative material in the opening in the insulating material, the second insulative material being atop and directly against the first insulative material in the opening in the insulating material and being of different composition from that of the first insulative material. ### Claim 17 (depends on 16) The integrated circuit structure of claim 16 wherein the multiple annular ledges respectively have a maximum step height from an adjacent lower surface to an uppermost surface of the respective annular ledge, the maximum step height of an upper of the multiple annular ledges being less than the maximum step height of a lower of the multiple annular ledges that is immediately-adjacent the upper annular ledge. ### Claim 18 (depends on 16) The integrated circuit structure of claim 16 wherein the multiple annular ledges respectively have a maximum step height from an adjacent lower surface to an uppermost surface of the respective annular ledge, the maximum step height of an upper of the multiple annular ledges being more than the maximum step height of a lower of the multiple annular ledges that is immediately-adjacent the upper annular ledge. ### Claim 19 (depends on 16) The integrated circuit structure of claim 16 wherein, there are two and only two of the annular ledges elevationally between the top and the bottom of the opening; the two annular ledges respectively have a maximum step height from an adjacent lower surface to an uppermost surface of the respective annular ledge, the maximum step height of an upper of the two annular ledges being less than the maximum step height of a lower of the two annular ledges; and the insulating material has an upper surface immediately-radially-adjacent the opening, maximum step height between the upper annular ledge and the upper surface being less than the maximum step height of the upper annular ledge. ### Claim at position 20 20-27. (canceled) ### Claim 28 (depends on 1) The integrated circuit structure of claim 1 wherein the first insulative material is thinner than the second insulative material. ### Claim 29 (depends on 1) The integrated circuit structure of claim 1 wherein the first insulative material comprises silicon nitride. ### Claim 30 (depends on 1) The integrated circuit structure of claim 1 wherein the second insulative material comprises polyimide. ### Claim 31 (depends on 1) The integrated circuit structure of claim 1 wherein the first insulative material comprises silicon nitride and the second insulative material comprises polyimide. ### Claim 32 (depends on 1) The integrated circuit structure of claim 1 wherein the first insulative material is thinner than the second insulative material, the first insulative material comprises silicon nitride, and the second insulative material comprises polyimide. ### Claim 33 (depends on 16) The integrated circuit structure of claim 16 wherein the first insulative material is thinner than the second insulative material. ### Claim 34 (depends on 16) The integrated circuit structure of claim 16 wherein the first insulative material comprises silicon nitride. ### Claim 35 (depends on 16) The integrated circuit structure of claim 16 wherein the second insulative material comprises polyimide. ### Claim 36 (depends on 16) The integrated circuit structure of claim 16 wherein the first insulative material comprises silicon nitride and the second insulative material comprises polyimide. ### Claim 37 (depends on 16) The integrated circuit structure of claim 16 wherein the first insulative material is thinner than the second insulative material, the first insulative material comprises silicon nitride, and the second insulative material comprises polyimide.