# US 2019/0355677 A1 · Power gate circuits for semiconductor devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0355677 A1 - Document ID: US20190355677A1 - Status: Published application - Kind: A1 - Application number: 16/532,140 - Filed: 2019-08-05 - Published: 2019-11-21 - Earliest claimed: 2017-06-20 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Yasushi Matsubara - Web page: https://patentgrep.com/patent/US20190355677A1 ## CPC - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - G11C 5/14: Power supply arrangements {, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels} - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)} - H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence) - H10W 72/50: Bond wires - H10W 90/00: Package configurations - G11C 11/4072: Circuits for initialization, powering up or down, clearing memory or presetting - G11C 11/4074: Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits - G11C 11/408: Address circuits - H10D 88/00: Three-dimensional [3D] integrated devices - H10W 72/07554: {changes in dispositions} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips} - H10W 90/722: {between stacked chips} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G11C: STATIC STORES (semiconductor memory devices H10B) - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Apparatuses and methods for gate power to circuits of semiconductor devices are described. An example apparatus includes a substrate, a first wiring and a second wiring, and a plurality of transistors. The first wiring may be supplied with a power voltage, and the first wiring is formed over the substrate and is elongating in a first direction. The second wiring may be formed between the substrate and the first wiring, and vertically overlapping the first wiring with the second wiring elongating in the first direction. The plurality of transistors are vertically coupled between the first wiring and the second wiring. ## Claims ### Claim 1 An apparatus, comprising: a substrate; a first wiring supplied with a power voltage, the first wiring being formed over the substrate and elongating in a first direction; a second wiring formed between the substrate and the first wiring with vertically overlapping the first wiring, the second wiring elongating in the first direction; a plurality of transistors vertically coupled between the first wiring and the second wiring; a third wiring formed between the first wiring and the second wiring, the third wiring includes gates of the plurality of vertical transistors. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein each of the gates of the plurality of vertical transistors is included in the third wiring. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein each of the plurality of transistors comprises a body extending from a first end to a second end, wherein the first and second ends are proximate to the first wiring and the second wiring, respectively. ### Claim 4 (depends on 3) The apparatus of claim 3, wherein the third wiring comprises a plurality of apertures, each aperture is penetrated by the body of a respective one of the plurality of transistors. ### Claim 5 (depends on 3) The apparatus of claim 3 further comprising: a first plurality of conductive regions in contact with the first wiring; and a second plurality of conductive regions in contact with the second wiring; wherein each region of the first and second plurality of conductive regions includes a source/drain region of a respective one of the plurality of transistors. ### Claim 6 (depends on 3) The apparatus of claim 3, wherein the body of each of the plurality of transistors comprises a circular cross-section. ### Claim 7 (depends on 3) The apparatus of claim 3 further comprising a plurality of gate oxides each disposed circumferentially around a perimeter of the body of a respective one of the plurality of transistors. ### Claim 8 An apparatus, comprising: a plurality of circuit blocks, each circuit block including circuits; a first conductive structure configured to be provided a supply voltage; a second conductive structure configured to provide power to the circuits of the plurality of circuit blocks; a planar structure disposed between the first and second conductive structures; and a plurality of transistors disposed between the first and second conductive structures and penetrating the planar structure and configured to provide power from the first conductive structure to the second conductive structure when activated, each of the plurality of transistors including a respective gate included in a gate electrode in the planar structure. ### Claim 9 (depends on 8) The apparatus of claim 8, wherein the first conductive structure, the second conductive structure and the planar structure extend in a first direction, and wherein each of the plurality of transistors is disposed between the first and second conductive structures extend in a second direction perpendicular to the first direction. ### Claim 10 (depends on 8) The apparatus of claim 8, wherein the planar structure comprises a plurality of apertures, each aperture is penetrated by a respective one of the plurality of transistors. ### Claim 11 (depends on 10) The apparatus of claim 10, wherein each of the plurality of transistors comprises a cross-section surrounded in a respective aperture in the planar structure the cross-section comprising a circular or a polygonal shape. ### Claim 12 (depends on 8) The apparatus of claim 8 further comprising an external terminal configured to receive a clock enable signal, wherein the gate electrode in the planar structure is configured to receive a control signal to activate/deactivate the plurality of transistors, and wherein logic level of the control signal is controlled responsive to the clock enable signal. ### Claim 13 (depends on 12) The apparatus of claim 12 further comprises an additional planar structure disposed between the planar structure and the second conductive structure, wherein the additional planar structure comprises an additional gate electrode configured to receive an additional control signal and wherein a logic level of the additional control signal is controlled responsive to a row activate signal. ### Claim 14 An apparatus, comprising: a plurality of circuit blocks each circuit block including circuits; a structure comprising: a first conductive structure configured to be provided a supply voltage; a second conductive structure configured to provide power to the circuits of the plurality of circuit blocks; and a plurality of vertical transistors disposed between the first and second conductive structures and configured to provide power from the first conductive structure to the second conductive structure responsive to a control signal provided to gates of the plurality of vertical transistors; wherein the structure overlaps at least a portion of the plurality of circuit blocks. ### Claim 15 (depends on 14) The apparatus of claim 14, wherein the plurality of circuit blocks overlap with the structure in a vertical direction and extend in a planar direction from the structure. ### Claim 16 (depends on 15) The apparatus of claim 15, wherein a circuit block of the plurality of circuit blocks comprises a data sense amplifier, a write buffer circuit, and/or an error correction code circuit. ### Claim 17 (depends on 14) The apparatus of claim 14, wherein the first conductive structure and the second conductive structure extend in a planar direction and each of the plurality of vertical transistors comprises a post of semiconductor material that extends from the first conductive structure to the second conductive structure in a vertical direction perpendicular to the planar direction. ### Claim 18 (depends on 17) The apparatus of claim 17, wherein the structure further comprises a third conductive structure disposed between the first and second conductive structures and extends in the planar direction, wherein the third conductive structure includes the gates of the plurality of vertical transistors. ### Claim 19 (depends on 18) The apparatus of claim 18, wherein the third conductive structure comprises an array of apertures arranged in the planar direction, each aperture in the array of apertures receives a respective post of the plurality of vertical transistors to penetrate therethrough to extend between the first and second conductive structures. ### Claim 20 (depends on 14) The apparatus of claim 14 further comprising a first voltage bus and a second voltage bus, respectively in contact with the first and second conductive structures, wherein the first and second voltage buses are configured to provide the power and receive the supply voltage, respectively.