# US 2019/0355676 A1 · Semiconductor device package and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0355676 A1 - Document ID: US20190355676A1 - Status: Published application - Kind: A1 - Application number: 15/982,923 - Filed: 2018-05-17 - Published: 2019-11-21 - Earliest claimed: 2018-05-17 - Assignees: Advanced Semiconductor Engineering, Inc. - Applicants: Advanced Semiconductor Engineering, Inc. - Inventors: Shun-Tsat TU; Pei-Jen LO; Yan-Si LIN; Chien-Chi KUO - Web page: https://patentgrep.com/patent/US20190355676A1 ## CPC - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H01F 17/0013: {with stacked layers} - H01F 27/2804: {Printed windings} - H01F 27/323: {Insulation between winding turns, between winding layers} - H01F 41/041: {Printed circuit coils (apparatus or processes for manufacturing printed circuits in general H05K3/00)} - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/685: comprising multiple insulating layers - H01F 27/2809: {on stacked layers} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ## Abstract A semiconductor device package includes a substrate, a first coil, a dielectric layer and a second coil. The first coil is disposed on the substrate. The first coil includes a first conductive segment and a second conductive segment. The dielectric layer covers the first conductive segment of the first coil and the second conductive segment of the first coil and defines a first recess between the first conductive segment of the first coil and the second conductive segment of the first coil. The second coil is disposed on the dielectric layer. The second coil has a first conductive segment disposed within the first recess. ## Claims ### Claim 1 A semiconductor device package, comprising: a substrate; a first coil disposed on the substrate, the first coil including a first conductive segment and a second conductive segment; a dielectric layer covering the first conductive segment of the first coil and the second conductive segment of the first coil and defining a first recess between the first conductive segment of the first coil and the second conductive segment of the first coil; and a second coil disposed on the dielectric layer, the second coil including a first conductive segment disposed within the first recess. ### Claim 2 (depends on 1) The semiconductor device package of claim 1, wherein the first coil further includes a third conductive segment disposed on the substrate spaced apart from the second conductive segment of the first conductive coil; the dielectric layer covers the third conductive segment of the first coil and defining a second recess between the second conductive segment of the first coil and the third conductive segment of the first coil; and the second coil further includes a second conductive segment disposed within the second recess. ### Claim 3 (depends on 2) The semiconductor device package of claim 2, further comprising a first connection structure disposed across the second conductive segment of the first coil and electrically connecting the first conductive segment of the second coil to the second conductive segment of the second coil ### Claim 4 (depends on 3) The semiconductor device package of claim 3, wherein a thickness of the first connection structure is less than a thickness of the first conductive segment of the first coil or a thickness of the first conductive segment of the second coil. ### Claim 5 (depends on 1) The semiconductor device package of claim 1, wherein the first conductive segment of the first coil and the first conductive segment of the second coil overlap in a direction parallel to a top surface of the substrate. ### Claim 6 (depends on 1) The semiconductor device package of claim 1, wherein the first conductive segment of the first coil has a top surface facing away a top surface of the substrate; the first conductive segment of the second coil has a bottom surface facing toward the top surface of the substrate; and a distance between the top surface of the first conductive segment of the first coil and the top surface of the substrate is greater than a distance between the bottom surface of the first conductive segment of the second coil and the top surface of the substrate. ### Claim 7 (depends on 1) The semiconductor device package of claim 1, further comprising a second connection structure connecting the first coil to the second coil. ### Claim 8 (depends on 1) The semiconductor device package of claim 1, wherein the first coil is separated from the second coil and magnetically coupled to the second coil. ### Claim 9 (depends on 1) The semiconductor device package of claim 1, wherein a current in the first coil and a current in the second coil flow in the same direction. ### Claim 10 A semiconductor device package, comprising: a substrate having a top surface; a first coil disposed on the top surface of the substrate, the first coil including a first conductive segment; a dielectric layer covering the first conductive segment and the second conductive segment; and a second coil disposed on the dielectric layer, the second coil including a first conductive segment, wherein the first conductive segment of the first coil and the first conductive segment of the second coil overlap in a direction substantially parallel to the top surface of the substrate. ### Claim 11 (depends on 10) The semiconductor device package of claim 10, wherein the second coil further includes a second conductive segment adjacent to the first conductive segment of the second coil; and the first conductive segment of the first coil is disposed between the first conductive segment of the second coil and the second conductive segment of the second coil. ### Claim 12 (depends on 11) The semiconductor device package of claim 11, further comprising a first connection structure disposed across the first conductive segment of the first coil and electrically connecting the first conductive segment of the second coil to the second conductive segment of the second coil. ### Claim 13 (depends on 12) The semiconductor device package of claim 12, wherein a thickness of the first connection structure is less than a thickness of the first conductive segment of the first coil or a thickness of the first conductive segment of the second coil. ### Claim 14 (depends on 11) The semiconductor device package of claim 11, wherein the first conductive segment of the first coil has a top surface facing away the top surface of the substrate; the first conductive segment of the second coil has a bottom surface facing toward the top surface of the substrate; and a distance between the top surface of the first conductive segment of the first coil and the top surface of the substrate is greater than a distance between the bottom surface of the first conductive segment of the second coil and the top surface of the substrate. ### Claim 15 (depends on 11) The semiconductor device package of claim 11, further comprising a second connection structure connecting the first coil to the second coil. ### Claim 16 (depends on 11) The semiconductor device package of claim 11, wherein the first coil is separated from the second coil and magnetically coupled to the second coil. ### Claim 17 (depends on 11) The semiconductor device package of claim 11, wherein a current in the first coil and a current in the second coil flow in the same direction. ### Claim 18 A semiconductor device package, comprising: a substrate having a top surface; a first coil disposed on the top surface of the substrate, the first coil including a plurality of conductive segments; a dielectric layer covering the first coil and defining a recess between two adjacent conductive segments of the first coil; and a second coil disposed on the dielectric layer, the second coil including a plurality of conductive segments, wherein one of the plurality of the conductive segments of the second coil is disposed within the recess. ### Claim 19 (depends on 18) The semiconductor device package of claim 18, further comprising a connection structure connecting two adjacent conductive segments of the second coil and disposed across a conductive segment of the first coil between the two adjacent conductive segments of the second coil. ### Claim 20 (depends on 19) The semiconductor device package of claim 19, wherein a thickness of the connection structure is less than a thickness of any of the conductive segments of the first coil or a thickness of any of the conductive segments of the second coil.