# US 2019/0355642 A1 · Semiconductor device and method of making

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2019/0355642 A1
- Document ID: US20190355642A1
- Status: Published application
- Kind: A1
- Application number: 16/335,527
- Filed: 2016-09-26
- Published: 2019-11-21
- Earliest claimed: 2016-09-26
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Andrew J. Brown; Chi-Mon Chen; Robert Alan May; Amanda E. Schuckman; Wei-Lun Kane Jen
- Web page: https://patentgrep.com/patent/US20190355642A1

## CPC

- H10W 70/68: Shapes or dispositions thereof
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 70/618: {the bridge chips being embedded in the package substrates, interposers or redistribution layers}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/6525: {for securing the interconnections to the substrate, e.g. to prevent peeling}
- H10W 70/685: comprising multiple insulating layers
- H10W 74/01: Manufacture or treatment
- H10W 74/016: {using moulds}
- H10W 74/10: characterised by their shape or disposition
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation}
- H10W 74/40: characterised by their materials
- H10W 74/476: {Organic materials comprising silicon}
- H10W 90/00: Package configurations
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Various embodiments disclosed relate to semiconductor device and method of making the same using functional silanes. In various embodiments, the present invention provides a semiconductor device including a silicon die component having a first silica surface. The semiconductor device includes a dielectric layer having a second surface generally facing the first silica surface. The semiconductor device includes an interface defined between the first surface and the second surface. The semiconductor device also includes a silane based adhesion promoter layer disposed within the junction and bonded to at least one of the first silica surface and the dielectric layer second surface.

## Claims

### Claim 1

A semiconductor device comprising:
an embedded component having a first hydroxylated surface;
a dielectric layer having a second surface adjacent to the first hydroxylated surface;
an interface defined between the first hydroxylated surface and the second surface; and
a silane based adhesion promoter layer formed from a plurality of adhesion promotor molecules disposed within the interface and bonded to at least one of the first hydroxylated surface and the dielectric layer second surface, wherein at least one pair of adjacent adhesion promotor molecules are bonded to each other.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein silane based adhesion promotor layer is bonded to both of the first hydroxylated surface and the dielectric layer second surface.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the silane based adhesion promotor layer is bonded to the first hydroxylated surface through a siloxane bond.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein the silane based adhesion promoter layer includes a nucleophilic end group.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric layer is formed from an epoxy-based resin.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the second surface of the dielectric layer comprises a layer of epoxy-based resin that is bonded to the dielectric component.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein the layer of epoxy-based resin has a thickness ranging from about 1 micron to about 5 microns.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the silane based adhesion promotor layer is bonded to a terminal epoxy group of the dielectric layer second surface.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the silane based adhesion promotor layer includes a hydroxyl group.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the silane based adhesion promotor layer comprises:
a first silane group comprising:
a silicon atom;
a nucleophile bonded to the silicon;
a first hydroxyl group;
a second hydroxyl group; and
a third hydroxyl group.

### Claim 11 (depends on 1)

The semiconductor device of claim 1, wherein the silane based adhesion promoter layer further comprises a second silane group.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein the first hydroxyl group of the first bifunctional silane derivative adhesion promoter is bonded to the first hydroxylated surface of the die by a siloxane bond, and wherein the second hydroxyl group of the first silane group is bonded to at least one hydroxyl group of the second silane group by a siloxane bond.

### Claim 13 (depends on 1)

The semiconductor device of claim 1, wherein the silane based adhesion promotor layer forms a monolayer, wherein each adhesion promotor molecule is attached to the dielectric layer, the first hydroxylated surface, and at least one adjacent adhesion promotor molecule.

### Claim 14 (depends on 1)

The semiconductor device of claim 1, wherein the first hydroxylated surface is a silica surface of a silicon die.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, wherein the silicon die is further connected to a second silicon die.

### Claim 16

A semiconductor device comprising:
an interface between a dielectric layer and a silicon die having a silica surface comprising an adhesion promotor molecule, the adhesion promotor molecule having the structure:
wherein
A is chosen from —NR4—, —O—, and —S—,
R4 is chosen from —H and (C1-C20)hydrocarbyl,
L is chosen from a bond and (C1-C20)hydrocarbylene,
SiSD is a silicon atom in the silicon die,
R1 is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP
wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom, R2 is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP
wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom, and R3 is a polymer of the dielectric.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein A is chosen from —NH—, —O—, and —S—.

### Claim 18

(canceled)

### Claim 19 (depends on 16)

The semiconductor device of claim 16, wherein R4 is chosen from —H and (C1-C5)alkyl.

### Claim 20

(canceled)

### Claim 21 (depends on 16)

The semiconductor device of claim 16, wherein L is (C1-10)alkylene.

### Claim at position 22

22-32. (canceled)

### Claim 33

A method of forming a semiconductor device, the method comprising:
treating a first surface of a silicon die with a surface treatment composition comprising a bifunctional silane to form a silane-functionalized intermediate semiconductor device, the bifunctional silane having the structure,
wherein
A is chosen from —NR4—, —OR4, and —SH,
R4 is independently chosen from —H and (C1-C20)hydrocarbyl,
L is chosen from a bond and (C1-C20)hydrocarbylene,
R1 is chosen from —H, (C1-C20)hydrocarbyl, —OH, and a halide,
R2 is chosen from —H, (C1-C20)hydrocarbyl, —OH, and a halide, and
R3 is chosen from —H, (C1-C20)hydrocarbyl, —OH, and a halide; and
reacting the silane-functionalized intermediate semiconductor device with a dielectric component, to form the semiconductor device, the semiconductor device having the structure,
wherein
A is chosen from —NR4—, —O—, and —S—,
R4 is chosen from —H and (C1-C20)hydrocarbyl,
L is chosen from a bond and (C1-C20)hydrocarbylene,
SiSD is a silicon atom in the silicon die,
R1′ is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom,
R2′ is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom,
R5 is a polymer of the dielectric.

### Claim at position 24

-35. (canceled)