# US 2019/0355632 A1 · Semiconductor device and method of manufacturing semiconductor device

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- Number: US 2019/0355632 A1
- Document ID: US20190355632A1
- Status: Published application
- Kind: A1
- Application number: 16/377,084
- Filed: 2019-04-05
- Published: 2019-11-21
- Earliest claimed: 2018-05-16
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Katsumi TANIGUCHI
- Web page: https://patentgrep.com/patent/US20190355632A1

## CPC

- H10W 76/13: Containers comprising a conductive base serving as an interconnection
- H10W 76/15: Containers comprising an insulating or insulated base
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 72/071: {Connecting or disconnecting}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 90/00: Package configurations
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 76/47: Solid or gel fillings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention includes: a plurality of semiconductor modules on a metal base (conductor base); a first insulating bus bar and a second insulating bus bar connecting the semiconductor modules; a box-like insulating resin frame around the semiconductor modules; a first insulating layer that seals the semiconductor modules, the first insulating layer having an upper surface at a position that is lower than upper ends of terminals extending from an insulating circuit substrate of the semiconductor module inside the insulating resin frame; and second insulating layers on the first insulating layer inside the insulating resin frame, the upper ends of the terminals being buried inside the second insulating layers. Interfaces formed by the first insulating layer, second insulating layers, and sidewall parts (third insulating layer) of the insulating resin frame are arranged between the terminals and ground positions formed at the lower ends of the sidewall parts.

## Claims

### Claim 1

A semiconductor device, comprising:
a conductor base;
a plurality of identical semiconductor units mounted on the conductor base, each of the semiconductor units comprising a semiconductor module and a box-shaped insulating resin frame that encloses the semiconductor module; and
a bus bar connecting the plurality of semiconductor units in parallel to each other,
wherein the semiconductor module comprises:
an insulating circuit substrate mounted on the conductor base,
semiconductor chips mounted on the insulating circuit substrate, and
rod-shaped terminals provided on the insulating circuit substrate and connected to the semiconductor chips, the rod-shaped terminals vertically extending upwardly away from the conductor base,
wherein the box-shaped insulating resin frame is mounted on the conductor base so as to enclose the semiconductor module, and the conductor base in contact with a bottom of a sidewall of the insulating resin frame is a grounded portion,
wherein each of the semiconductor units further comprises:
a first insulating member that fills in a space defined by the insulating resin frame and the semiconductor module enclosed therein so as to seal the semiconductor module, an upper surface of the first insulating member being positioned at a level that is lower than upper end portions of the rod-shaped terminals, thereby exposing the upper end portions of the respective rod-shaped terminals from the first insulating member, the exposed upper end portions of the respective rod-shaped being connected to the bus bar; and
a second insulating member that fills in an inside of the insulating resin frame on the first insulating member so as to seal and bury the upper end portions of the rod-shaped terminals that are connected to the bus bar, and
wherein in each of the semiconductor units, one or more of an interface between the first insulating member and the second insulating member, an interface between the first insulating member and the insulating resin frame, and an interface between the second insulating member and the insulating resin frame are arranged between two adjacent ones of the rod-shaped terminals and between any of the rod-shaped terminals and the grounded portion.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein in each of the semiconductor units:
the insulating resin frame further has a ceiling part that has a beam part and a pair of through-holes formed on both sides of the beam part;
in a plan view, one of the rod-shaped terminals is located within one of the through-holes and another one of the rod-shaped terminals that is next to said one of the rod-shaped terminals is located within another of the through-holes; and
the interface between the first insulating member and the second insulating member, an interface between the first insulating member and the beam part of the ceiling part of the insulating resin frame, and an interface between the second insulating member and the beam part of the ceiling part of the insulating resin frame are arranged between said one of the rod-shaped terminals and said another one of the rod-shaped terminals.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the conductor base has a groove to receive a lower end of the sidewall of the insulating resin frame or protrusions to support the lower end of the sidewall of the insulating resin frame from both sides.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein the conductor base has a groove to receive a lower end of the sidewall of the insulating resin frame or protrusions to support the lower end of the sidewall of the insulating resin frame from both sides.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the sidewall of the insulating resin frame has a step that divides a lower part and an upper part of the sidewall, the lower part being thinner than the upper part.

### Claim 6 (depends on 2)

The semiconductor device according to claim 2, wherein the sidewall of the insulating resin frame has a step that divides a lower part and an upper part of the sidewall, the lower part being thinner than the upper part.

### Claim 7 (depends on 3)

The semiconductor device according to claim 3, wherein the sidewall of the insulating resin frame has a step that divides a lower part and an upper part of the sidewall, the lower part being thinner than the upper part.

### Claim 8 (depends on 4)

The semiconductor device according to claim 4, wherein the sidewall of the insulating resin frame has a step that divides a lower part and an upper part of the sidewall, the lower part being thinner than the upper part.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein a rated voltage of the semiconductor device is 3.3 kV or higher.

### Claim 10 (depends on 2)

The semiconductor device according to claim 2, wherein a creepage that is a length of a path that follows the interfaces arranged between said one of the rod-shaped terminals and said another one of the rod-shaped terminals is greater than a horizontal distance between said one of the rod-shaped terminals and said another one of the rod-shaped terminals for enhanced insulation.

### Claim 11

A method of manufacturing a semiconductor device, comprising:
mounting, on a conductor base, a plurality of identical semiconductor modules, each of the semiconductor modules comprising an insulating circuit substrate, semiconductor chips mounted on the insulating circuit substrate, and rod-shaped terminals provided on the insulating circuit substrate and connected to the semiconductor chips, the rod-shaped terminals vertically extending upwardly away from the conductor base;
arranging a plurality of box-shaped insulating resin frame on the conductor base so as to respectively enclose the semiconductor modules and bonding the insulating resin frames to the conductor base;
in each of the insulating resin frames, forming a first insulating member that fills in a space defined by the insulating resin frame and the semiconductor module enclosed therein so as to seal the semiconductor module, an upper surface of the first insulating member being positioned at a level that is lower than upper end portions of the rod-shaped terminals, thereby exposing the upper end portions of the respective rod-shaped terminals from the first insulating member;
connecting the exposed upper end portions of the corresponding rod-shaped terminals of the plurality of semiconductor module by a bus bar so as to connect the plurality of semiconductor modules in parallel to each other; and
in each of the insulating resin frames, forming a second insulating member that fills in an inside of the insulating resin frame on the first insulating member so as to seal and bury the upper end portions of the rod-shaped terminals that are connected to the bus bar,
wherein the method is performed such that in each of the insulating resin frames, one or more of an interface between the first insulating member and the second insulating member, an interface between the first insulating member and the insulating resin frame, and an interface between the second insulating member and the insulating resin frame are arranged between two adjacent ones of the rod-shaped terminals and between any of the rod-shaped terminals and the grounded portion.

### Claim 12 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the method is performed such that:
the insulating resin frame further has a ceiling part that has a beam part and a pair of through-holes formed on both sides of the beam part;
in a plan view, one of the rod-shaped terminals is located within one of the through-holes and another one of the rod-shaped terminals that is next to said one of the rod-shaped terminals is located within another of the through-holes; and
the interface between the first insulating member and the second insulating member, an interface between the first insulating member and the beam part of the ceiling part of the insulating resin frame, and an interface between the second insulating member and the beam part of the ceiling part of the insulating resin frame are arranged between said one of the rod-shaped terminals and said another one of the rod-shaped terminals.

### Claim 13 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the connecting of the upper end portions of the terminals is performed after the forming of the first insulating member and before the forming of the second insulating member.

### Claim 14 (depends on 12)

The method of manufacturing the semiconductor device according to claim 12, wherein the connecting of the upper end portions of the terminals is performed after the forming of the first insulating member and before the forming of the second insulating member.

### Claim 15 (depends on 12)

The method of manufacturing the semiconductor device according to claim 12, wherein a creepage that is a length of a path that follows the interfaces arranged between said one of the rod-shaped terminals and said another one of the rod-shaped terminals is greater than a horizontal distance between said one of the rod-shaped terminals and said another one of the rod-shaped terminals for enhanced insulation.