# US 2019/0355608 A1 · High temperature electrostatic chuck

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- Number: US 2019/0355608 A1
- Document ID: US20190355608A1
- Status: Published application
- Kind: A1
- Application number: 16/381,986
- Filed: 2019-04-11
- Published: 2019-11-21
- Earliest claimed: 2018-05-16
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Abdul Aziz KHAJA; Jun MA; Hyung Je WOO; Fei WU; Jian LI
- Web page: https://patentgrep.com/patent/US20190355608A1

## CPC

- H10P 72/722: {Details of electrostatic chucks}
- H10P 72/0602: {Temperature monitoring}
- H10P 72/72: using electrostatic chucks
- H10P 72/7614: {characterised by a plurality of individual support members, e.g. support posts or protrusions}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H10P 72/0432: {mainly by conduction}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.

## Claims

### Claim 1

A substrate support comprising:
a temperature control base;
a dielectric body having a substrate chucking surface thereon, the substrate chucking surface partially defined by a ledge formed about a periphery of the dielectric body;
an electrode disposed within the dielectric body; and
a plurality of features formed radially inward of the ledge, wherein the number of features increases radially from a center of the substrate chucking surface to the ledge.

### Claim 2 (depends on 1)

The substrate support of claim 1, wherein each feature of the plurality of features has a diameter between about 1 mm and about 2 mm.

### Claim 3 (depends on 1)

The substrate support of claim 1, wherein each feature of the plurality of features has a height of about 10 microns to about 50 microns.

### Claim 4 (depends on 1)

The substrate support of claim 1, wherein the plurality of features comprises about 1000 features.

### Claim 5 (depends on 1)

The substrate support of claim 1, further comprising a temperature control device disposed in the dielectric body.

### Claim 6 (depends on 1)

The substrate support of claim 1, wherein the dielectric body has a leakage current between about 15 milliamps and about 115 milliamps.

### Claim 7

A substrate support comprising:
a dielectric body having a substrate chucking surface thereon, the substrate chucking surface partially defined by a ledge formed about a periphery of the dielectric body;
an electrode disposed within the dielectric body;
a plurality of features formed radially inward of the ledge, wherein the number of features increases radially from a center of the substrate chucking surface to the ledge; and
a seasoning layer formed on the dielectric body which is resistant to degradation from exposure to a processing chemistry.

### Claim 8 (depends on 7)

The substrate support of claim 7, wherein each feature of the plurality of features has a diameter between about 1 mm and about 2 mm.

### Claim 9 (depends on 7)

The substrate support of claim 7, wherein each feature of the plurality of features has a height of about 10 microns to about 50 microns.

### Claim 10 (depends on 7)

The substrate support of claim 7, wherein the seasoning layer has a thickness of has a thickness between about 0.5 microns to about 10 microns.

### Claim 11 (depends on 7)

The substrate support of claim 7, wherein the seasoning layer comprises silicon oxide.

### Claim 12 (depends on 7)

The substrate support of claim 7, further comprising a temperature control device disposed in the dielectric body.

### Claim 13

A substrate support comprising:
a dielectric body having a substrate chucking surface thereon, the substrate chucking surface partially defined by a ledge formed about a periphery of the dielectric body;
an electrode disposed within the dielectric body; and
a plurality of features formed on the substrate chucking surface, wherein distribution of the plurality of features is greater at a periphery of the substrate chucking surface than at a central region thereof, and wherein the dielectric body has a resistivity selected in relation to an operating temperature of the substrate support.

### Claim 14 (depends on 13)

The substrate support of claim 13, wherein each feature of the plurality of features has a diameter between about 1 mm and about 2 mm.

### Claim 15 (depends on 13)

The substrate support of claim 13, wherein each feature of the plurality of features has a height of about 10 microns to about 50 microns.

### Claim 16 (depends on 13)

The substrate support of claim 13, wherein the plurality of features comprises about 1000 features.

### Claim 17 (depends on 13)

The substrate support of claim 13, wherein the substrate support and the dielectric body has a resistivity between about 0.1×1010 Ohm-cm and about 1.0×1011 Ohm-cm at about 350 degrees Celsius.

### Claim 18 (depends on 13)

The substrate support of claim 13, wherein the dielectric body has a resistivity between about 0.1×1010 Ohm-cm and about 1.0×1011 Ohm-cm at about 550 degrees.

### Claim 19 (depends on 13)

The substrate support of claim 13, wherein the ledge surrounds the plurality of features.

### Claim 20 (depends on 13)

The substrate support of claim 13, further comprising a temperature control device disposed in the dielectric body.