# US 2019/0355592 A1 · Display device and method for manufacturing the same

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- Number: US 2019/0355592 A1
- Document ID: US20190355592A1
- Status: Published application
- Kind: A1
- Application number: 16/526,375
- Filed: 2019-07-30
- Published: 2019-11-21
- Earliest claimed: 2009-08-27
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei YAMAZAKI; Junichiro SAKATA; Masashi TSUBUKU; Kengo AKIMOTO; Miyuki HOSOBA; Masayuki SAKAKURA; Yoshiaki OIKAWA
- Web page: https://patentgrep.com/patent/US20190355592A1

## CPC

- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 30/674: {characterised by the active materials}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/01: Manufacture or treatment
- H10D 86/021: {of multiple TFTs}
- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10D 86/0251: {characterised by increasing the uniformity of device parameters}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/38: {characterised by treatments done after the formation of the materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

## Claims

### Claim 1

(canceled)

### Claim 2

A method for manufacturing a portable information device comprising a display portion with a touch panel, comprising the steps of:
forming an oxide semiconductor layer;
forming a source electrode layer and a drain electrode layer over and in contact with a first region of the oxide semiconductor layer; and
forming an inorganic insulating layer over and in contact with a second region of the oxide semiconductor layer, the source electrode layer, and the drain electrode layer so that a resistance of the second region of the oxide semiconductor layer is increased,
wherein a conductivity of the second region of the oxide semiconductor layer is lower than a conductivity of the first region of the oxide semiconductor layer.

### Claim 3 (depends on 2)

The method for manufacturing a portable information device according to claim 2, further comprising a step of performing a heat treatment on the oxide semiconductor layer before forming the source electrode layer and the drain electrode layer.

### Claim 4 (depends on 3)

The method for manufacturing a portable information device according to claim 3, wherein the heat treatment on the oxide semiconductor layer is performed under an atmosphere including nitrogen.

### Claim 5 (depends on 3)

The method for manufacturing a portable information device according to claim 3, wherein the heat treatment on the oxide semiconductor layer is performed at a temperature higher than or equal to 400° C.

### Claim 6 (depends on 2)

The method for manufacturing a portable information device according to claim 2, further comprising a step of performing a heat treatment on the inorganic insulating layer so that oxygen in the inorganic insulating layer is supplied to the second region of the oxide semiconductor layer.

### Claim 7 (depends on 6)

The method for manufacturing a portable information device according to claim 6, wherein the heat treatment on the inorganic insulating layer is performed under an atmosphere including nitrogen.

### Claim 8 (depends on 2)

The method for manufacturing a portable information device according to claim 2, wherein the oxide semiconductor layer comprises a crystal.

### Claim 9 (depends on 2)

The method for manufacturing a portable information device according to claim 2, wherein the oxide semiconductor layer is a stacked film.

### Claim 10 (depends on 2)

The method for manufacturing a portable information device according to claim 2, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

### Claim 11 (depends on 2)

The method for manufacturing a portable information device according to claim 2, wherein the oxide semiconductor layer comprises indium, tin, and zinc.