# US 2019/0355586 A1 · Manufacturing process of elemental chip

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- Number: US 2019/0355586 A1
- Document ID: US20190355586A1
- Status: Published application
- Kind: A1
- Application number: 16/528,936
- Filed: 2019-08-01
- Published: 2019-11-21
- Earliest claimed: 2016-09-26
- Assignees: Panasonic Intellectual Property Management Co., Ltd.
- Applicants: Panasonic Intellectual Property Management Co., Ltd.
- Inventors: Noriyuki MATSUBARA
- Web page: https://patentgrep.com/patent/US20190355586A1

## CPC

- H10P 50/242: {of Group IV materials}
- G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023)
- G03F 7/091: {characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement}
- H10P 14/61: using masks
- H10P 50/267: {using plasmas}
- H10P 50/287: {by chemical means}
- H10P 50/691: {for Group IV materials or Group III-V materials}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10P 76/2041: {Photolithographic processes}
- H10P 72/7412: {the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support}
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/7422: {used to protect an active side of a device or wafer}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A manufacturing process of an elemental chip includes steps of preparing a substrate held on the holding tape, the substrate including first and second sides opposite each other and the second side thereof being held on the holding tape, and the substrate further including a plurality of element regions and a plurality of segmentation regions defining each of the element regions; setting a nozzle to have a length between a lower most edge of the nozzle and the first side of the substrate in a range between 20 mm and 150 mm, spraying a resist solution to form droplets of the resist solution, the resist solution containing a resist constituent and a solvent; forming a resist layer by vaporizing the solvent from the droplets and depositing the resist constituent on the first side of the substrate that is held on the holding tape such that an amount of the solvent remained in the resist layer to be in a range between 5 wt. % and 20 wt. %; patterning the resist layer to expose the first side of the substrate in the segmentation regions; and plasma-etching the first side of the substrate exposed in the segmentation regions thereof.

## Claims

### Claim 1

A manufacturing process of an elemental chip, comprises:
a preparation step for preparing a substrate held on a holding tape, the substrate including first and second sides opposite each other and the second side thereof being held on the holding tape, and the substrate further including a plurality of element regions and a plurality of segmentation regions defining each of the element regions;
a setting step for setting a nozzle, a length between a lower most edge of the nozzle and the first side of the substrate being in a range between 20 mm and 150 mm, a spray step for spraying a resist solution from the nozzle to form droplets of the resist solution, the resist solution containing a resist constituent and a solvent;
a layer-formation step for forming a resist layer by vaporizing the solvent from the droplets and depositing the resist constituent on the first side of the substrate that is held on the holding tape such that an amount of the solvent remained in the resist layer to be in a range between 5 wt. % and 20 wt. %;
a patterning step for patterning the resist layer to expose the first side of the substrate in the segmentation regions; and
an etching step for plasma-etching the substrate on the first side exposed in the segmentation regions thereof.

### Claim 2 (depends on 1)

The manufacturing process according to claim 1, wherein the substrate and the holding tape are maintained at 50 degrees Celsius or less during a time window between the beginning of the spray step and the beginning of the patterning step.

### Claim 3 (depends on 1)

The manufacturing process according to claim 1, further comprising:
a removing step for removing the solvent remained in the resist layer by exposing the resist layer in the decompressed circumstance having a pressure less than the atmosphere after the end of the layer-formation step and before the beginning of the patterning step.

### Claim 4 (depends on 1)

The manufacturing process according to claim 1, wherein the solvent contains a methyl ethyl ketone.

### Claim 5 (depends on 1)

The manufacturing process according to claim 1, wherein the solvent contains a propylene glycol monomethyl ether acetate.

### Claim 6 (depends on 1)

The manufacturing process according to claim 1, wherein an amount of the solvent in the resist solution is in a range between 15 wt % and 50 wt %.