# US 2019/0355580 A1 · Semiconductor element and method for manufacturing the same

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- Number: US 2019/0355580 A1
- Document ID: US20190355580A1
- Status: Published application
- Kind: A1
- Application number: 16/284,059
- Filed: 2019-02-25
- Published: 2019-11-21
- Earliest claimed: 2018-05-18
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Toshiki HIKOSAKA; Jumpei TAJIMA; Shinya NUNOUE
- Web page: https://patentgrep.com/patent/US20190355580A1

## CPC

- H10P 14/36: {characterised by treatments done before the formation of the materials}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/53: the imperfections being within the semiconductor body
- H10D 62/605: {Planar doped, e.g. atomic-plane doped or delta-doped}
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 62/854: further characterised by the dopants
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/8252: {characterised by the dopants}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3216: {Nitrides}
- H10P 14/3238: {being insulating materials}
- H10P 14/3251: {consisting of three or more layers}
- H10P 14/3416: {Nitrides}
- H10P 14/3448: {Delta-doping}
- H10P 34/40: with high-energy radiation
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

According to one embodiment, a semiconductor element includes a first nitride semiconductor region, a second nitride semiconductor region, and an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region. A Si concentration in the intermediate region is not less than 1×1018/cm3 and not more than 1×1019/cm3. A charge density in the intermediate region is 3×1017/cm3 or less.

## Claims

### Claim 1

A semiconductor element, comprising:
a first nitride semiconductor region;
a second nitride semiconductor region; and
an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region,
a Si concentration in the intermediate region being not less than 1×1018/cm3 and not more than 1×1019/cm3,
a charge density in the intermediate region being 3×1017/cm3 or less.

### Claim 2 (depends on 1)

The element according to claim 1, wherein a length of the intermediate region along a direction from the first nitride semiconductor region toward the second nitride semiconductor region is not less than 0.25 nm and not more than 30 nm.

### Claim 3 (depends on 1)

The element according to claim 1, wherein the intermediate region further includes Ga and N.

### Claim 4 (depends on 1)

The element according to claim 1, wherein the intermediate region further includes oxygen.

### Claim 5 (depends on 1)

The element according to claim 1, wherein a Si concentration in the first nitride semiconductor region is less than 5×1017/cm3.

### Claim 6 (depends on 1)

The element according to claim 1, wherein
the second nitride semiconductor region includes:
a first layer region including Alx1Ga1-x1N (0≤x1<1); and
a second layer region including Alx2Ga1-x2N (0<x2 ≤1 and x1<x2), and
the first layer region is provided between the second layer region and the intermediate region.

### Claim 7 (depends on 6)

The element according to claim 6, wherein a Si concentration in the first layer region is less than 5×1017/cm3.

### Claim 8 (depends on 6)

The element according to claim 6, further comprising first to third electrodes,
the second layer region including a first partial region and a second partial region, a second direction from the first partial region toward the second partial region crossing a first direction from the first nitride semiconductor region toward the second nitride semiconductor region,
the first electrode being electrically connected to the first partial region,
the second electrode being electrically connected to the second partial region,
a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction.

### Claim 9 (depends on 1)

The element according to claim 1, further comprising a third nitride semiconductor region provided between the intermediate region and the second nitride semiconductor region.

### Claim 10 (depends on 9)

The element according to claim 9, wherein a concentration of an impurity included in the first nitride semiconductor region is different from a concentration of an impurity included in the third nitride semiconductor region.

### Claim 11 (depends on 9)

The element according to claim 9, wherein the impurity included in the first nitride semiconductor region includes carbon.

### Claim 12

A method for manufacturing a semiconductor element, comprising:
processing a first nitride semiconductor region in an atmosphere including Si;
performing surface processing of the first nitride semiconductor region after the processing; and
forming a second nitride semiconductor region on the first nitride semiconductor region after the surface processing.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the surface processing includes a first processing including irradiating UV light.

### Claim 14 (depends on 13)

The method according to claim 13, wherein the irradiating of the UV light is performed in an atmosphere including oxygen.

### Claim 15 (depends on 13)

The method according to claim 13, wherein the surface processing further includes a second processing using an alkaline liquid.

### Claim 16 (depends on 15)

The method according to claim 15, the alkaline liquid includes at least one selected from the group consisting of a potassium hydroxide (KOH) aqueous solution and a tetramethyl ammonium hydroxide (TMAH) aqueous solution.

### Claim 17 (depends on 13)

The method according to claim 13, wherein
the surface processing further includes a second processing using an alkaline liquid, and
the second processing is performed after the first processing.

### Claim 18 (depends on 17)

The method according to claim 17, wherein the surface processing further includes a third processing between the first processing and the second processing, the third processing using a liquid including at least one selected from the group consisting of hydrochloric acid, nitric acid, and hydrofluoric acid.