Dielectric layer, optical recording medium, sputtering target and oxide
AssigneeKabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
InventorYuki TAUCHI
Life of this patent
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Abstract
A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0≤b/(a+b)≤0.6, (2) 0≤(c+d)/(a+b+c+d+e)≤0.5, (3) 0≤b≤50, (4) 0≤c≤40, (5) 0≤d≤45, (6) 0≤e≤40, and (7) 20≤b+c+d+e≤80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.
Claims6
A dielectric layer that is to be overlaid directly on a recording layer for recording carried out by irradiation with light, wherein
- the dielectric layer is formed from an oxide comprising:
- a Sn element;
- and at least one of a Zn element, a Zr element, a Si element and a Ga element, and
- the dielectric layer satisfies inequalities (1) to (7), given a content of the Sn element being a mol %, a content of the Zn element being b mol %, a content of the Zr element being c mol %, a content of the Si element being d mol %, and a content of the Ga element being e mol %, with respect to a total of elements other than oxygen in the oxide:
- 0≤b/(a+b)≤0.6 (1),
- 0≤(c+d)/(a+b+c+d+e)≤0.5 (2),
- 0≤b≤50 (3),
- 0≤c≤40 (4),
- 0≤d≤45 (5),
- 0≤e≤40 (6), and
- 20≤b+c+d+e≤80 (7).
A sputtering target for use in formation of a dielectric layer that is to be overlaid directly on a recording layer for recording carried out by irradiation with light,
- the sputtering target comprising:
- a Sn element;
- and at least one of a Zn element, a Zr element, a Si element and a Ga element,
- wherein the sputtering target satisfies inequalities (1) to (7), given a content of the Sn element being a mol %, a content of the Zn element being b mol %, a content of the Zr element being c mol %, a content of the Si element being d mol %, and a content of the Ga element being e mol %, with respect to a total of elements in the sputtering target:
- 0≤b/(a+b)≤0.6 (1),
- 0≤(c+d)/(a+b+c+d+e)≤0.5 (2),
- 0≤b≤50 (3),
- 0≤c≤40 (4),
- 0≤d≤45 (5),
- 0≤e≤40 (6), and
- 20≤b+c+d+e≤80 (7).
An oxide, comprising:
- a Sn element;
- and
- at least one of a Zn element, a Zr element, a Si element and a Ga element,
- wherein the oxide satisfies inequalities (1) to (7), given a content of the Sn element being a mol %, a content of the Zn element being b mol %, a content of the Zr element being c mol %, a content of the Si element being d mol %, and a content of the Ga element being e mol %, with respect to a total of elements other than oxygen:
- 0≤b/(a+b)≤0.6 (1),
- 0≤(c+d)/(a+b+c+d+e)≤0.5 (2),
- 0≤b≤50 (3),
- 0≤c≤40 (4),
- 0≤d≤45 (5),
- 0≤e≤40 (6), and
- 20≤b+c+d+e≤80 (7).
Dependencies are inferred from the claim text.