Optoelectronic device and image sensor and electronic device including the same

Abstract

Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0<x<1), silicon oxynitride (SiOyNz, 0<y<0.5, 0<z≤1), P-doped silicon oxynitride (SiOyNz:P, 0<y<0.5, 0<z≤1), and a combination thereof.

Dependencies are inferred from the claim text.