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AssigneeAac Acoustic Technologies (Shenzhen) Co., Ltd.
InventorsLieng Loo, Shaoquan Wang, Xiaohui Zhong, Kahkeen Lai, Kianheng Goh
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The present disclosure provides a method for processing a conductive structure. The method includes the following steps of: forming on a first surface a groove concave from the first surface towards a second surface by means of dry etching; extending the groove from the second surface to form a via through a silicon base; and processing a conductive structure within the via. The method can be applied to a silicon base having a thickness larger than 300 μm. It breaks the limit on thickness that can be processed in the related art and is capable of providing electrical connectivity on both sides of a silicon base. The method is simple and highly reliable, has high processing efficiency and is applicable to mechanized production.
A method for processing a conductive structure, providing the silicon base, the silicon base comprising a first surface and a second surface opposite to the first surface, the first surface and the second surface having a thickness larger than 300 μm therebetween, the method comprising:
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