# US 2019/0319084 A1 · Light-emitting device

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- Number: US 2019/0319084 A1
- Document ID: US20190319084A1
- Status: Published application
- Kind: A1
- Application number: 16/049,813
- Filed: 2018-07-31
- Published: 2019-10-17
- Earliest claimed: 2018-04-11
- Assignees: Au Optronics Corporation
- Applicants: Au Optronics Corporation
- Inventors: Chi-Sheng Chiang; Chun-Hsiang Chan; Hsin-Hung Li; To-Cheng Fan; Ting-Wei Tsai; Min-Chin Tsai
- Web page: https://patentgrep.com/patent/US20190319084A1

## CPC

- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10D 30/6723: {having light shields}
- H10D 64/516: {the thicknesses being non-uniform}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/833: Transparent materials
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/852: Encapsulations
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- H10K 59/8051: {Anodes}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/835: {Reflective materials}
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/8052: {Cathodes}
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- H10K 2102/351: {Thickness}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A light-emitting device includes a substrate, an active device, a first light-shielding layer, a transparent electrode, a second light-shielding layer, a light-converting layer, an electroluminescent structure, and a top electrode. The active device is located on the substrate. The first light-shielding layer is disposed on the active device and has a first opening. The transparent electrode is located on the first light-shielding layer and electrically connected to the active device. The second light-shielding layer is located on the transparent electrode and has a second opening corresponding to the first opening. The light-converting layer is substantially located in the first opening. The electroluminescent structure is substantially located in the second opening. The transparent electrode is located between the first opening and the second opening. The electroluminescent structure is located between the top electrode and the transparent electrode.

## Claims

### Claim 1

A light-emitting device, comprising:
a substrate;
an active device located on the substrate;
a first light-shielding layer located on the active device and having a first opening;
a transparent electrode located on the first light-shielding layer and electrically connected to the active device;
a second light-shielding layer located on the transparent electrode and having a second opening corresponding to the first opening;
a light-converting layer substantially located in the first opening;
an electroluminescent structure substantially located in the second opening, wherein the transparent electrode is located between the first opening and the second opening; and
a top electrode, wherein the electroluminescent structure is located between the top electrode and the transparent electrode.

### Claim 2 (depends on 1)

The light-emitting device of claim 1, wherein a width of the first opening facing the transparent electrode is greater than a width of the second opening facing the transparent electrode.

### Claim 3 (depends on 1)

The light-emitting device of claim 1, further comprising:
a third light-shielding layer located between the active device and the substrate and having a third opening corresponding to the first opening.

### Claim 4 (depends on 3)

The light-emitting device of claim 3, wherein a material of each of the third light-shielding layer and the top electrode comprises aluminum and wherein the third light-shielding layer has a thickness greater than 50 nm.

### Claim 5 (depends on 3)

The light-emitting device of claim 3, wherein a width of the first opening facing the substrate is less than a width of the third opening.

### Claim 6 (depends on 1)

The light-emitting device of claim 1, wherein at least a portion of the top electrode is located in the second opening, the electroluminescent structure is completely located inside the second opening, and the light-converting layer is completely located inside the first opening.

### Claim 7 (depends on 1)

The light-emitting device of claim 1, wherein a width of the first opening facing the substrate is less than a width of the first opening facing the transparent electrode.

### Claim 8 (depends on 1)

The light-emitting device of claim 1, wherein the active device comprises:
a channel layer;
a gate located on the channel layer;
a gate insulating layer located between the gate and the channel layer;
a source and a drain respectively electrically connected to the channel layer; and
an interlayer located on the gate, the gate insulating layer and the channel layer, wherein the first light-shielding layer comprises:
a first portion substantially covering the active device; and
a second portion connected to the first portion, wherein the second portion penetrates through the interlayer, and the first opening penetrates through the second portion.

### Claim 9 (depends on 8)

The light-emitting device of claim 8, wherein the gate insulating layer comprises: a thick portion overlapped with the gate; and a thin portion overlapped with the first opening and the second opening, wherein a thickness of the thin portion is about 0% to 50% of the thick portion.

### Claim 10 (depends on 1)

The light-emitting device of claim 1, wherein the transparent electrode is in contact with the electroluminescent structure and the light-converting layer, and a material of the transparent electrode comprises indium tin oxide and a thickness thereof is 50 nm to 139 nm.

### Claim 11 (depends on 1)

The light-emitting device of claim 1, wherein a material of the light-converting layer comprises a quantum dot material.

### Claim 12 (depends on 11)

The light-emitting device of claim 11, wherein the quantum dot material comprises a perovskite material.

### Claim 13 (depends on 1)

The light-emitting device of claim 1, wherein a material of each of the first light-shielding layer and the second light-shielding layer comprises a photoresist.

### Claim 14 (depends on 1)

The light-emitting device of claim 1, wherein a material of the electroluminescent structure comprises an organic light-emitting material or a quantum dot material.

### Claim 15 (depends on 14)

The light-emitting device of claim 14, wherein the quantum dot material comprises a perovskite material.

### Claim 16 (depends on 14)

The light-emitting device of claim 14, wherein the electroluminescent structure is configured to emit a blue light.

### Claim 17 (depends on 1)

The light-emitting device of claim 1, further comprising a packaging layer located on the top electrode.

### Claim 18

A light-emitting device, comprising:
a substrate;
an active device located on the substrate;
a first light-shielding layer located on the active device and having a first opening, wherein a depth of the first opening is about 4 microns to 10 microns;
a transparent electrode located on the first light-shielding layer and electrically connected to the active device;
a second light-shielding layer located on the transparent electrode and having a second opening corresponding to the first opening, wherein a depth of the second opening is about 0.5 microns to 2 microns, and a relationship between a width W11 of the first opening facing the transparent electrode and a width W21 of the second opening facing the transparent electrode is 80%≤W21/W11≤130%;
a light-converting layer substantially located in the first opening;
an electroluminescent structure substantially located in the second opening, wherein the transparent electrode is located between the first opening and the second opening and is in contact with the light-converting layer and the electroluminescent structure; and
a top electrode, wherein the electroluminescent structure is located between the top electrode and the transparent electrode.

### Claim 19 (depends on 18)

The light-emitting device of claim 18, wherein a width W12 of the first opening facing the substrate is less than the width W11, and a width W22 of the second opening away from the transparent electrode is greater than the width W21.