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US 2019/0319070 A1Published application
Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
AssigneeSK hynix Inc.
InventorsBeom Yong KIM, Soo Gil KIM
Life of this patent
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Abstract
A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
Claims20
A method for fabricating a switch, the method comprising:
- forming a first electrode layer;
- forming a second electrode layer over the first electrode layer;
- and
- implanting ions between the first electrode layer and the second electrode layer to form a gas region in which a current flows or does not flow according to a voltage applied to the switch.
1 more element
A method for fabricating a switch, the method comprising:
- forming a first electrode layer;
- forming a second electrode layer over the first electrode layer;
- and
- forming a gas layer interposed between a first surface of the first electrode layer and a second surface of the second electrode layer, one or both of the first surface of the first electrode layer and the second surface of the second electrode layer directly contacting the gas layer.
1 more element
Dependencies are inferred from the claim text.