# US 2019/0318952 A1 · Circuit substrate processing laminate and method for processing circuit substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0318952 A1 - Document ID: US20190318952A1 - Status: Published application - Kind: A1 - Application number: 16/366,637 - Filed: 2019-03-27 - Published: 2019-10-17 - Earliest claimed: 2018-04-16 - Assignees: Shin-Etsu Chemical Co., Ltd. - Applicants: Shin-Etsu Chemical Co., Ltd. - Inventors: Shohei TAGAMI; Michihiro SUGO - Web page: https://patentgrep.com/patent/US20190318952A1 ## CPC - H10P 72/74: {using temporarily an auxiliary support} - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 72/0442: {Apparatus for placing on an insulating substrate, e.g. tape} - H10P 72/7412: {the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support} - H10P 72/7416: {used during dicing or grinding} - H10P 72/7422: {used to protect an active side of a device or wafer} - H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer} - H10P 72/7442: {Separation by peeling} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A circuit substrate processing laminate has, sequentially in the order of a support, a temporary adhesive material layer releasably laminated on the support, and a circuit substrate. The circuit substrate has a front surface on which a circuit is formed and a back surface to be processed. The temporary adhesive material layer is releasably laminated to the front surface, and is composed of a thermosetting siloxane polymer layer laminated on the support, after cured, has a first peeling force of 10 to 500 mN/25 mm as measured by a 180° peel test. The first peeling force is required for peeling the polymer layer from an interface with the support. The polymer layer, after cured, has a second peeling force of 50 to 1000 mN/25 mm as measured by the 180° peel test. The second peeling force is required for peeling the polymer layer from an interface with the circuit substrate. ## Claims ### Claim 1 A circuit substrate processing laminate comprising, sequentially in the order of a support, a temporary adhesive material layer, and a circuit substrate, wherein the temporary adhesive material layer is releasably laminated on the support, the circuit substrate has a front surface on which a circuit is formed and a back surface to be processed, and the temporary adhesive material layer is releasably laminated to the front surface of the circuit substrate, the temporary adhesive material layer is composed of a thermosetting siloxane polymer layer (A), the polymer layer (A) laminated on the support, after cured, has a first peeling force of 10 to 500 mN/25 mm as measured by a 180° peel test conducted at 5 mm/second using a test piece having a width of 25 mm, where the first peeling force is required for peeling the polymer layer (A) from an interface with the support, and the polymer layer (A) laminated on the circuit substrate, after cured, has a second peeling force of 50 to 1000 mN/25 mm as measured by the 180° peel test conducted at 5 mm/second using a test piece having a width of 25 mm, where the second peeling force is required for peeling the polymer layer (A) from an interface with the circuit substrate. ### Claim 2 (depends on 1) The circuit substrate processing laminate according to claim 1, wherein the thermosetting siloxane polymer layer (A) is a cured product of a composition containing: (A-1) an organopolysiloxane having two or more alkenyl groups per molecule; (A-2) an organohydrogenpolysiloxane having two or more silicon atom-bonded hydrogen atoms (Si—H groups) per molecule; and (A-3) a platinum-based catalyst, in such an amount that a mole ratio of the Si—H groups in the component (A-2) to the alkenyl groups in the component (A-1) is 0.3 to 10. ### Claim 3 (depends on 2) The circuit substrate processing laminate according to claim 2, wherein the organopolysiloxane (A-1) having two or more alkenyl groups per molecule contains a siloxane unit (Q unit) represented by SiO4/2. ### Claim 4 (depends on 2) The circuit substrate processing laminate according to claim 2, wherein the thermosetting siloxane polymer layer (A) is a cured product of a composition containing the component (A-1), the component (A-2), the component (A-3), and further either or both of (A-4) an organic solvent and (A-5) a reaction retarder. ### Claim 5 (depends on 3) The circuit substrate processing laminate according to claim 3, wherein the thermosetting siloxane polymer layer (A) is a cured product of a composition containing the component (A-1), the component (A-2), the component (A-3), and further either or both of (A-4) an organic solvent and (A-5) a reaction retarder. ### Claim 6 (depends on 1) The circuit substrate processing laminate according to claim 1, wherein the cured product of the thermosetting siloxane polymer layer (A) contains 0.001 to 60.000 mol % of a siloxane unit (M unit) represented by R1R2R3SiO1/2, 10.000 to 99.999 mol % of a siloxane unit (D unit) represented by R4R5SiO2/2, 0.000 to 0.005 mol % of a siloxane unit (T unit) represented by R6SiO3/2, and 0.000 to 60.000 mol % of a siloxane unit (Q unit) represented by SiO4/2, where R1 to R6 each represent an unsubstituted or substituted monovalent hydrocarbon group. ### Claim 7 (depends on 2) The circuit substrate processing laminate according to claim 2, wherein the cured product of the thermosetting siloxane polymer layer (A) contains 0.001 to 60.000 mol % of a siloxane unit (M unit) represented by R1R2R3SiO1/2, 10.000 to 99.999 mol % of a siloxane unit (D unit) represented by R4R5SiO2/2, 0.000 to 0.005 mol % of a siloxane unit (T unit) represented by R6SiO3/2, and 0.000 to 60.000 mol % of a siloxane unit (Q unit) represented by SiO4/2, where R1 to R6 each represent an unsubstituted or substituted monovalent hydrocarbon group. ### Claim 8 (depends on 1) The circuit substrate processing laminate according to claim 1, wherein the cured product of the thermosetting siloxane polymer layer (A) has a storage elastic modulus at 25° C. of 1×106 to 1×109 Pa. ### Claim 9 (depends on 2) The circuit substrate processing laminate according to claim 2, wherein the cured product of the thermosetting siloxane polymer layer (A) has a storage elastic modulus at 25° C. of 1×106 to 1×109 Pa. ### Claim 10 (depends on 1) A method for processing a circuit substrate, comprising the steps of: (a) preparing the circuit substrate processing laminate according to claim 1; (b) thermally curing the thermosetting siloxane polymer layer (A); (c) grinding or polishing the back surface of the circuit substrate; (d) processing the back surface of the circuit substrate; (e) separating the support from the circuit substrate processing laminate; and (f) taking out only the circuit substrate by separating a cured film of the polymer layer (A) from the circuit substrate processing laminate from which the support has been separated. ### Claim 11 (depends on 1) A method for processing a circuit substrate, comprising the steps of: (a) preparing the circuit substrate processing laminate according to claim 1; (b) thermally curing the thermosetting siloxane polymer layer (A); (c) grinding or polishing the back surface of the circuit substrate; (d) processing the back surface of the circuit substrate; and (g) taking out only the circuit substrate by separating the support and the polymer layer (A) together from the circuit substrate processing laminate. ### Claim 12 (depends on 10) The method for processing a circuit substrate according to claim 10, wherein the step (a) of preparing the circuit substrate processing laminate includes: (a-1) a step of laminating an uncured composition layer of the thermosetting siloxane polymer layer (A) onto the support; and (a-2) a step of bonding the support and the circuit substrate with the uncured composition layer of the polymer layer (A) interposed therebetween. ### Claim 13 (depends on 11) The method for processing a circuit substrate according to claim 11, wherein the step (a) of preparing the circuit substrate processing laminate includes: (a-1) a step of laminating an uncured composition layer of the thermosetting siloxane polymer layer (A) onto the support; and (a-2) a step of bonding the support and the circuit substrate with the uncured composition layer of the polymer layer (A) interposed therebetween. ### Claim 14 (depends on 10) The method for processing a circuit substrate according to claim 10, wherein the step (a) of preparing the circuit substrate processing laminate includes: (a-3) a step of laminating an uncured composition layer of the polymer layer (A) onto the circuit substrate; and (a-4) a step of bonding the circuit substrate and the support with the uncured composition layer of the polymer layer (A) interposed therebetween. ### Claim 15 (depends on 11) The method for processing a circuit substrate according to claim 11, wherein the step (a) of preparing the circuit substrate processing laminate includes: (a-3) a step of laminating an uncured composition layer of the polymer layer (A) onto the circuit substrate; and (a-4) a step of bonding the circuit substrate and the support with the uncured composition layer of the polymer layer (A) interposed therebetween.