# US 2019/0317543 A1 · Reference voltage generating circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0317543 A1 - Document ID: US20190317543A1 - Status: Published application - Kind: A1 - Application number: 16/466,602 - Filed: 2017-12-19 - Published: 2019-10-17 - Earliest claimed: 2017-01-18 - Assignees: New Japan Radio Co., Ltd. - Applicants: New Japan Radio Co., Ltd. - Inventors: Haruhiko YOSHIDA - Web page: https://patentgrep.com/patent/US20190317543A1 ## CPC - G05F 3/30: Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) - G05F 1/463: {Sources providing an output which depends on temperature} - G05F 1/465: {Internal voltage generators for integrated circuits, e.g. step down generators} - G05F 1/468: {characterised by reference voltage circuitry, e.g. soft start, remote shutdown} - H10D 84/403: {Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors} - G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract a reference voltage generating circuit that includes a bandgap reference voltage generating circuit main body (10) configured to generate a substantially constant reference voltage at room temperature, a high temperature correction circuit (30) configured to increase a reference voltage generated by the reference voltage generating circuit main body at a high temperature by supplying a high temperature correction current that increases as the temperature increases to the resistor, a low temperature correction circuit (40) configured to increase a reference voltage generated by the reference voltage generating circuit main body at a low temperature by supplying a low temperature correction current that increases as the temperature decreases to the resistor, and a bias circuit (20) configured to generate a bias voltage according to the temperature, so as to control the high temperature correction current and the low temperature correction current at the same time. ## Claims ### Claim 1 A reference voltage generating circuit comprising: a bandgap reference voltage generating circuit main body configured to generate a reference voltage at room temperature which is substantially constant and a reference voltage which is lower than the reference voltage at room temperature as temperature increases, by cancelling a negative temperature coefficient of a voltage between a base and an emitter of a transistor with a positive temperature coefficient of a resistor; a high temperature correction circuit configured to increase a reference voltage generated by the reference voltage generating circuit main body at a high temperature by supplying a high temperature correction current that increases as the temperature increases to the resistor; and a bias circuit configured to generate a bias voltage according to the temperature, so as to control the high temperature correction current by supplying the bias voltage to the high temperature correction circuit. ### Claim 2 (depends on 1) The reference voltage generating circuit according to claim 1, wherein, in the reference voltage generating circuit main body, a part of the resistor is formed by a series connection circuit of a first resistor, a second resistor, and a third resistor, and wherein the high temperature correction current is supplied from the high temperature correction circuit to a common connection point of the first resistor and the second resistor. ### Claim 3 (depends on 2) The reference voltage generating circuit according to claim 2, wherein the high temperature correction circuit includes a 10th transistor to which a bias voltage is supplied from the reference voltage generating circuit main body and a 11th transistor and a 12th transistor in which an output current of the 10th transistor branches and flows to emitters of the 11th transistor and the 12th transistor, a collector of the 11th transistor is connected to a ground, and a collector of the 12th transistor is connected to the common connection point of the first resistor and the second resistor in the reference voltage generating circuit main body, and wherein the bias circuit controls a collector current of the 11th transistor to be larger than a collector current of the 12th transistor at the room temperature, and controls the collector current of the 12th transistor to be larger than the collector current of the 11th transistor at the high temperature. ### Claim 4 (depends on 3) The reference voltage generating circuit according to claim 3, wherein the bias circuit includes a sixth transistor and a seventh transistor to which a bias voltage is supplied from the reference voltage generating circuit main body, a fifth resistor, a sixth resistor, and a seventh resistor which are connected in series between a collector of the sixth transistor and the ground, and a diode-connected ninth transistor to which a collector current of the seventh transistor flows, wherein a voltage at a common connection point of the sixth resistor and the seventh resistor is supplied to a base of the 11th transistor as a third bias voltage, and wherein a collector voltage of the seventh transistor is supplied to a base of the 12th transistor as a fourth bias voltage. ### Claim 5 A reference voltage generating circuit comprising: a bandgap reference voltage generating circuit main body configured to generate a reference voltage at room temperature which is substantially constant and a reference voltage which is lower than the reference voltage at room temperature as temperature decreases, by cancelling a negative temperature coefficient of a voltage between a base and an emitter of a transistor with a positive temperature coefficient of a resistor; a low temperature correction circuit configured to increase a reference voltage generated by the reference voltage generating circuit main body at a low temperature by supplying a low temperature correction current that increases as the temperature decreases to the resistor; and a bias circuit configured to generate a bias voltage according to the temperature, so as to control the low temperature correction current by supplying the bias voltage to the low temperature correction circuit. ### Claim 6 (depends on 5) The reference voltage generating circuit according to claim 5, wherein, in the reference voltage generating circuit main body, a part of the resistor is formed by a series connection circuit of a first resistor, a second resistor, and a third resistor, and wherein the low temperature correction current is supplied from the low temperature correction circuit to a common connection point of the second and third resistors. ### Claim 7 (depends on 6) The reference voltage generating circuit according to claim 6, wherein the low temperature correction circuit includes a 13th transistor to which a bias voltage is supplied from the reference voltage generating circuit main body and a 14th transistor and a 15th transistor in which an output current of the 13th transistor branches and flows to emitters of the 14th transistor and the 15th transistor, a collector of the 14th transistor is connected to a ground, and a collector of the 15th transistor is connected to the common connection point of the second and third resistors in the reference voltage generating circuit main body, and wherein the bias circuit controls a collector current of the 14th transistor to be larger than a collector current of the 15th transistor at the room temperature, and controls the collector current of the 15th transistor to be larger than the collector current of the 14th transistor at the low temperature. ### Claim 8 (depends on 7) The reference voltage generating circuit according to claim 7, wherein the bias circuit includes a sixth transistor and a seventh transistor to which a bias voltage is supplied from the reference voltage generating circuit main body, a fifth resistor, a sixth resistor, and a seventh resistor which are connected in series between a collector of the sixth transistor and the ground, and a diode-connected ninth transistor to which a collector current of the seventh transistor flows, wherein a collector voltage of the sixth transistor is supplied to a base of the 15th transistor as a first bias voltage, and wherein a collector voltage of the seventh transistor is supplied to a base of the 14th transistor as a fourth bias voltage. ### Claim 9 A reference voltage generating circuit comprising: a bandgap reference voltage generating circuit main body configured to generate a reference voltage at room temperature which is substantially constant and a reference voltage which is slightly lower than the reference voltage at room temperature as temperature increases and decreases, by cancelling a negative temperature coefficient of a voltage between a base and an emitter of a transistor with a positive temperature coefficient of a resistor; a high temperature correction circuit configured to increase a reference voltage generated by the reference voltage generating circuit main body at a high temperature by supplying a high temperature correction current that increases as the temperature increases to the resistor; a low temperature correction circuit configured to increase a reference voltage generated by the reference voltage generating circuit main body at a low temperature by supplying a low temperature correction current that increases as the temperature decreases to the resistor; and a bias circuit configured to generate a bias voltage according to the temperature, so as to control the high temperature correction current by supplying the bias voltage to the high temperature correction circuit, and to control the low temperature correction current by supplying the bias voltage to the low temperature correction circuit at the same time. ### Claim 10 (depends on 9) The reference voltage generating circuit according to claim 9, wherein, in the reference voltage generating circuit main body, a part of the resistor is formed by a series connection circuit of a first resistor, a second resistor, and a third resistor, and wherein the high temperature correction current is supplied from the high temperature correction circuit to a common connection point of the first resistor and the second resistor, and the low temperature correction current supplied from the low temperature correction circuit is supplied to a common connection point of the second and third resistors. ### Claim 11 (depends on 10) The reference voltage generating circuit according to claim 10, wherein the high temperature correction circuit includes a 10th transistor to which a bias voltage is supplied from the reference voltage generating circuit main body and a 11th transistor and a 12th transistor in which an output current of the 10th transistor branches and flows to emitters of the 11th transistor and the 12th transistor, a collector of the 11th transistor is connected to a ground, and a collector of the 12th transistor is connected to the common connection point of the first resistor and the second resistor in the reference voltage generating circuit main body, wherein the bias circuit controls a collector current of the 11th transistor to be larger than a collector current of the 12th transistor at the room temperature and the low temperature, and controls the collector current of the 12th transistor to be larger than the collector current of the 11th transistor at the high temperature, wherein the low temperature correction circuit includes a 13th transistor to which a bias voltage is supplied from the reference voltage generating circuit main body and a 14th transistor and a 15th transistor in which an output current of the 13th transistor branches and flows to emitters of the 14th transistor and the 15th transistor, a collector of the 14th transistor is connected to a ground, and a collector of the 15th transistor is connected to the common connection point of the second and third resistors in the reference voltage generating circuit main body, and wherein the bias circuit controls a collector current of the 14th transistor to be larger than a collector current of the 15th transistor at the room temperature and the high temperature, and controls the collector current of the 15th transistor to be larger than the collector current of the 14th transistor at the low temperature. ### Claim 12 (depends on 11) The reference voltage generating circuit according to claim 11, wherein the bias circuit includes a sixth transistor and a seventh transistor to which a bias voltage is supplied from the reference voltage generating circuit main body, a fifth resistor, a sixth resistor, and a seventh resistor which are connected in series between a collector of the sixth transistor and the ground, and a diode-connected ninth transistor to which a collector current of the seventh transistor flows, wherein a collector voltage of the sixth transistor is supplied to a base of the 15th transistor as a first bias voltage, and wherein a voltage at a common connection point of the sixth resistor and the seventh resistor is supplied to a base of the 11th transistor as a third bias voltage, and wherein a collector voltage of the seventh transistor is supplied to bases of the 12th transistor and the 14th transistor as a fourth bias voltage. ### Claim 13 (depends on 4) The reference voltage generating circuit according to claim 4, wherein a diode-connected eighth transistor is connected in parallel to the sixth resistor and the seventh resistor. ### Claim 14 (depends on 12) The reference voltage generating circuit according to claim 12, wherein a diode-connected eighth transistor is connected in parallel to the sixth resistor and the seventh resistor.