# US 2019/0316003 A1 · Slurry composition for polishing high stepped region

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2019/0316003 A1
- Document ID: US20190316003A1
- Status: Published application
- Kind: A1
- Application number: 16/302,604
- Filed: 2017-04-14
- Published: 2019-10-17
- Earliest claimed: 2016-05-16
- Assignees: Kctech Co., Ltd.
- Applicants: Kctech Co., Ltd.
- Inventors: Jung Yoon KIM; Jun Ha HWANG; Sun Kyoung KIM; Kwang Soo PARK
- Web page: https://patentgrep.com/patent/US20190316003A1

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)}
- C09K 3/1463: {Aqueous liquid suspensions}
- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09K 13/06: with organic material
- H10P 52/403: {of conductive or resistive materials}
- H10P 95/062: {involving a dielectric removal step}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide abrasive particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.

## Claims

### Claim 1

A slurry composition for polishing a high-step height region, the slurry composition comprising:
a polishing liquid containing metal oxide abrasive particles dispersed as positive charges; and
an additive liquid containing a polymer comprising at least one element capable of being activated into a positive charge,
wherein a polishing selectivity between a step height removal rate (SHRR) in an oxide film pattern wafer having a convex portion and a concave portion and a blanket wafer removal rate (BWRR) in an oxide film blanket wafer is greater than or equal to “5:1.”

### Claim 2 (depends on 1)

The slurry composition of claim 1, wherein a selectivity between a removal rate of the convex portion and a removal rate of the concave portion in the oxide film pattern wafer is greater than or equal to “5:1.”

### Claim 3 (depends on 1)

The slurry composition of claim 1, wherein
the metal oxide abrasive particles comprise at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic material or inorganic material, and the metal oxide in a colloidal phase, and
the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia.

### Claim 4 (depends on 1)

The slurry composition of claim 1, wherein the metal oxide abrasive particles are ceria in a colloidal phase dispersed as positive charges.

### Claim 5 (depends on 1)

The slurry composition of claim 1, wherein the polymer comprises at least one nitrogen activated as a positive charge.

### Claim 6 (depends on 1)

The slurry composition of claim 1, wherein the polymer is in a form of a quaternary ammonium, or a quaternary ammonium salt.

### Claim 7 (depends on 1)

The slurry composition of claim 1, wherein the polymer comprises at least one selected from the group consisting of:
poly(diallyldimethyl ammonium chloride);
poly[bis(2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea];
ethanol, 2,2′,2″-nitrilotris-, polymer with 1,4-dichloro-2-butene and N,N,N′,N′-tetramethyl-2-butene-1,4-diamine;
a hydroxyethyl cellulose dimethyl diallylammonium chloride copolymer;
a copolymer of acrylamide and diallyldimethylammonium chloride;
a copolymer of acrylamide and quaternized dimethylammoniumethyl methacrylate;
a copolymer of acrylic acid and diallyldimethylammonium chloride;
an acrylamide-dimethylaminoethyl methacrylate methyl chloride copolymer;
quaternized hydroxyethyl cellulose;
a copolymer of vinylpyrrolidone and quaternized dimethylaminoethyl methacrylate;
a copolymer of vinylpyrrolidone and quaternized vinylimidazole;
a copolymer of vinylpyrrolidone and methacrylamidopropyl trimethylammonium;
poly(2-methacryloxyethyltrimethylammonium chloride);
poly(acrylamide 2-methacryloxyethyltrimethyl ammonium chloride);
poly[2-(dimethylamino)ethyl methacrylate) methyl chloride];
poly[(3-acrylamidopropyl) trimethylammonium chloride];
poly[(3-methacrylamidopropyl) trimethylammonium chloride];
poly[oxyethylene(dimethylimino)ethylene (dimethylimino)ethylene dichloride];
a terpolymer of acrylic acid, acrylamide and diallyldimethylammonium chloride;
a terpolymer of acrylic acid, methacrylamidopropyl trimethylammonium chloride, and methyl acrylate, a terpolymer of vinylcaprolactam, vinylpyrrolidone, and quaternized vinylimidazole;
poly(2-methacryloxyethyl phosphorylcholine-co-n-butyl methacrylate);
poly[(dimethylamino)ethyl acrylate benzyl chloride quaternary salt (PDMAEA-BCQ);
poly[(dimethylamino)ethyl acrylate methyl chloride quaternary salt (PDMAEA-MCQ); and
polymethacrylamidopropyltrimonium chloride.

### Claim 8 (depends on 1)

The slurry composition of claim 1, wherein the polymer comprising at least one element capable of being activated into a positive charge is present in an amount of 0.001% by weight (wt %) to 0.1 wt % in the slurry composition.

### Claim 9 (depends on 1)

The slurry composition of claim 1, further comprising:
at least one acidic material selected from the group consisting of picolinic acid, polyacrylic acid, a polyacrylic acid-containing copolymer, polysulfonic acid, carboxylic acid, amino acid, acetic acid, malic acid, malonic acid, maleic acid, oxalic acid, phthalic acid, succinic acid, tartaric acid, citric acid, glutaric acid, glycolic acid, formic acid and lactic acid.

### Claim 10 (depends on 1)

The slurry composition of claim 1, further comprising:
a basic material with a pKa value greater than or equal to “9.”

### Claim 11 (depends on 10)

The slurry composition of claim 10, wherein the basic material comprises at least one selected from the group consisting of arginine, ammonium hydroxide (NH4OH), propylamine, triethylamine, tributylamine, tetramethylamine, tetramethylammonium hydroxide, monoethanolamine, diethanolamine, triethanolamine, 2-amino-2-ethyl-1,3-propanediol, 2-dimethylamino-2-methyl-1-propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 3-dimethylamino-1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2-diethylamino-1-propanol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino)2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, N-n-butyldiethanolamine, N-t-butylethanolamine, N-cyclohexyldiethanolamine, 2-(dimethyl amino) ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2-amino-2-pentanol, 2-[bis(2-hydroxyethyl)amino]-2-methyl-1-propanol, 2-[bis(2-hydroxyethyl)amino]-2-propanol, N,N-bis(2-hydroxypropyl)ethanolamine, 2-amino-2-methyl-1-propanol, tris(hydroxymethyl)aminomethane, and triisopropanolamine.

### Claim 12 (depends on 1)

The slurry composition of claim 1, wherein the slurry composition has a pH in a range of 3 to 8.

### Claim 13 (depends on 1)

The slurry composition of claim 1, further comprising:
water,
wherein a ratio of the polishing liquid:the water:the additive liquid is in a range of “1:3 to 10:1 to 8.”